Copper(II)-catalyzed preparation of alkylindium compounds and applications in cross-coupling reactions both in aqueous media

An efficient water-based method for the synthesis of alkylindium compound in the presence of a catalytic amount of cheap and readily available CuSO₄·5H₂O (10 mol%) was developed. The thus-generated alkylindium compounds effectively underwent palladium-catalyzed cross-coupling reactions with a myriad of aryl halides in aqueous media, leading to the cross-coupled products in modest to high yields. The mildness of the formed alkyl organometallics allowed the tolerance to various important functional groups incorporated in both substrates of alkyl iodides and aryl halides.     

Gallium and Indium Alkoxides with Hydride,Cyclopentadienediide and Copper(I) tert‐Butoxide as further Components

Gallium hydride stabilized by the base quinonuclidine reacts with acetone under addition of the Ga‐H function to the carbon–oxygen double bond yielding (HGa)₅(OiPr)₈O ( 1 ) as isolable compound. (HGa)₅(OiPr)₈O may be formally split in to four entities of HGa(OiPr)₂ and one entity HGaO. The inner atomic skeleton of 1 is a novel Ga₅O₉ heterocluster with gallium atoms occupying the corners of a distorted trigonal bi‐pyramid, an oxygen atom in the center and the remaining alcoholate oxygen atoms bridging eight of the nine edges of the bi‐pyramid (X‐ray diffraction analysis). Potassium indium alkoxide KIn(OtBu)₄ has been used to synthesize several new compounds like In₄(OtBu)₈(C₅H₄)₂ ( 2 ), (py)₂CuIn(OtBu)₄ ( 3 ), and [CuIn(OtBu)₄]₂ ( 4 ) by reaction with TiCl₂cp₂ ( 2 ) and CuCl ( 3 , 4 ). All compounds were characterized by spectroscopic means and by X‐ray structure analyses revealing novel polycyclic structures.     

Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes

To investigate the effect of indium-tin-oxide (ITO) electrode on the Al-doped HfO₂ (Al:HfO₂) ferroelectric thin films, we fabricated and characterized the ITO/Al:HfO₂/ITO and ITO/Al:HfO₂/TiN capacitors by changing the annealing conditions. The ferroelectric remnant polarization (2P_r) was obtained to be 13.25 μC/cm² for the ITO/Al:HfO₂/TiN capacitors with the post-deposition annealing, which was termed T1. The 2P_r decreased after the post-metallization annealing due to the interface degradation between the Al:HfO₂ and ITO electrode. Alternatively, the switching time and activation field of the T1 for the ferroelectric polarization switching were 1.25 μs and 1.15 MV/cm. These parameters were sensitively influenced by the interfacial dead layer formation and the amounts of ferroelectric orthorhombic phase. Furthermore, the fatigue endurance of the T1 were improved by preventing the crowding of oxygen vacancies at interfaces between the Al:HfO₂ and top electrodes, in which the polarization values did not experience marked variations even after the fatigue cycles of 10⁸.     

Influence of deposition conditions on nanostructured InSe thin films

In this study, nanostructured indium selenide (InSe) thin films were deposited on Indium tin oxide (ITO)-coated glass substrate using electrochemical deposition (ECD) from aqueous solution containing In(SO₄)₃.H₂O and SeO₂. The effects of deposition potential (−0.70 to −1.35 V), time (30-3600 s), temperature (25-80 °C) and pH (2.58 for A samples; 2 for B samples and 1.45 for C samples) on growth of the InSe thin films were examined in terms of their structural, morphological and optical properties. X-ray diffraction (XRD) analysis confirmed that the InSe thin films are in polycrystalline structure. It was found that the values of grain size decreased and the full width half maximum (FWHM) values increased with the increasing deposition potential. According to the absorption measurements, optical properties of the thin films varied with changes in deposition conditions. Based on the atomic force microscopy (AFM) and the scanning electron microscopy (SEM) images, surface morphology of the thin films was influenced by deposition potential and pH of the electrolyte, and non-homogeneous depositions distributed across the entire surface were observed. In addition, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and fourier transform infrared spectroscopy (FT-IR) analyses were used to further examine crystal quality, vibration, chemical binding conditions, In/Se orientation and structure of the prepared InSe thin films. When Raman results are examined, the B12 sample shows a more intensity and narrow peak at 248 cm⁻¹. XPS measurements sowed that A6 sample exhibited more growth in low potential for a long time and better film stoichiometry compared to the other three samples. Also, FT-IR studies prove the presence of InSe. According to the results, the film did not form at low temperatures and short times. However, the film formation began with the increasing deposition temperature and time at the low potential value of −0.730 V. But, it is clear that a high quality film can be obtained in cathodic potential with −1.3 V and shorter deposition time with 300 s at room temperature respectively. Overall results showed that the high quality thin films can be obtained by the ECD technique. However, deposition conditions must be sensitively adjusted to control morphology of the electrodeposited nanoparticles.     

负载苯基荧光酮纤维柱富集-GFAAS测定痕量铟

研究负载苯基荧光酮(PF)滤纸纤维柱预富集痕量铟,确立了制备负载苯基荧光酮纤维的最佳条件,对铟的富集、洗脱和测量条件进行了优化。含In待富集液在pH 5时,以2.0 mL·min-1的速率过柱,用8 mL 5.00 mol·L-1的HNO₃以1.0 mL·min-1的速率可以完全洗脱。用涂钨普通石墨管GFAAS测量In,选Ag作基体改进剂,提高了灵敏度。该方法检出限为0.32 ng·mL-1,回收率为95.0%～101%,RSD 1.8％～7.0％,测定自来水样品和人工合成锌、铝等样品的In,得到满意的结果。     

ICP-AES研究纳米TiO2材料对Ga,In, Tl的吸附性能

研究了纳米TiO2材料对Ga,In,Tl的吸附性能,考察了吸附动力学、最佳酸度、富集倍数和吸附容量,确定了待测金属离子的最佳吸附条件。实验结果表明:在最佳pH条件下,Ga,In,Tl能定量、快速地被吸附在纳米TiO2材料上;其静态吸附容量为:Ga48·6mg·g-1,In46·6mg·g-1和Tl23·4mg·g-1;被吸附在纳米TiO2上的金属离子能采用0·1mol·L-1EDTA 1·0mol·L-1HNO3混合溶液定量洗脱,其回收率均大于92%。当富集倍数为12·5时,本法对Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的检出限分别为3·0,6·0,13ng·mL-1。计算了相应的相对标准偏差(RSD%)分别为1·85%,1·96%,3·40%,该方法已成功地应用于地质样品中痕量Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的测定,结果满意。     

In situ measurements of InAs and InP (0 0 1) surface stress changes induced by surface reconstruction transitions

The anisotropic surface stress changes associated with the transition between different surface reconstructions of InAs and InP (0 0 1) surfaces are measured in situ and in real time in a molecular beam epitaxy (MBE) system. Reflectivity anisotropy of the surface measured at 1.96 eV, together with reflection high energy electron diffraction (RHEED) pattern, are used in order to identify the surface reconstructions, and the monitoring of the substrate curvature evolution to determine the variations in surface stress. Our results show the important contribution to the surface stress of the dimers present in these reconstructed surfaces. Furthermore, we provide for the first time quantitative values of the surface stress changes due to the transition between surface reconstructions for these III-V semiconductors compounds. We obtain values for these changes up to 0.7 Nm⁻¹, that is, of the same magnitude as the stress induced by deposition of one monolayer during growth of lattice-mismatched III-V semiconductor heteroepitaxial systems. This points out the great importance of surface stress evolution in this kind of processes.     

Metal-insulator transition in the In/Si(1 1 1) surface

The metal-insulator transition observed in the In/Si(1 1 1)-4 × 1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [C. González, J. Ortega, F. Flores, New J. Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.     

Rate acceleration and diastereoselectivity in chelation-controlled indium-promoted Barbier allylation of pyridine-2- and quinoline-2-imines in aqueous solvents

The imines generated in situ from 2-pyridinecarboxaldehyde/2-quinolinecarboxaldehyde and aryl amines undergo indium-mediated Barbier allylation in aqueous media to provide homoallylic amines. Crotyl and cinnamyl bromides lead to diastereoselective allylation with d.r. up to 98:2.     

Indium(I) iodide promoted highly selective 1,2-addition of allyl and benzyl groups to α,β-unsaturated nitriles under sonication: a new synthesis of conjugated imines

Allyl and benzyl bromides react with α,β-unsaturated nitriles in the presence of indium(I) iodide under sonication to produce the corresponding allylated and benzylated conjugated imines involving exclusive addition of the allyl/benzyl group to the CN moiety.