Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

煤直接液化油中混合酚的分离研究

利用分子筛择形特点，对煤直接液化油中的混合酚实施高效分离。本研究选取间甲酚和对甲酚作为分离煤直接液化油馏分段混合酚的模型化合物，采用化学液相沉积法对HZSM-5吸附剂的孔口结构进行改变，分析分子筛硅铝比及颗粒粒径对模型化合物间甲酚和对甲酚吸附分离性能的影响，以获得高性能固相吸附剂，并将其应用于180-190℃馏分段混合酚分离。结果表明，当分子筛硅铝比为25、粒径为3-5 μm时，分子筛的孔口结构调节效果最优；当正硅酸乙酯的最小用量为0.2 mL/g时，固相吸附剂的吸附量为0.03 g/g，对甲酚选择性高于95%。由于外表面沉积物对吸附剂的孔口结构变化，导致对甲酚选择性的提高。进一步采用HZSM-5（1）吸附剂对真实煤直接液化油混合酚的分离中发现，苯酚和对甲酚的选择性均达到100%。     

Microstructural stability and age-hardening behavior of Re-added dual two-phase Ni3Al and Ni3V intermetallic alloys

The effect of Re addition on the microstructure and hardening behaviour of the dual two-phase Ni₃Al (L1₂) and Ni₃V (D0₂₂) intermetallic alloy was investigated by scanning electron microscopy, transmission electron microscopy and Vickers hardness test. The two-phase eutectoid microstructure accompanying the Re-rich precipitates were observed in the channel region of the alloys in which Re substituted for Ni but not in those in which Re substituted for Al and V. The concomitant addition of Nb (or Ta) with Re more stabilized the two-phase eutectoid microstructure and consequently more induced the fine precipitates in the channel region. The annealing at temperatures below the eutectoid temperature was necessary to induce the fine precipitates in the channel region and thereby result in the precipitation hardening. The fine precipitation in the channel region and related hardening was attributed to the alloying feature so that Re is soluble in the A1 (fcc) phase at high temperatures and becomes less soluble in the two intermetallic phases decomposed from the A1 phase at low temperatures.     

Facile synthesis,characterization, and decolorization activity of Mn2+ and Al3+ co-doped hexagonal-like ZnO nanostructures as photocatalysts

A good photocatalyst with high efficiency can be synthesized easily using eco-friendly materials and processes. Our synthesized samples exhibit all of the aforementioned features. In this work, manganese co-doped ZnO at different weight percentages (3, 6, 9, and 15 wt.%) with and without 1.5 wt.% aluminum was synthesized by hydrothermal method, and their photocatalytic activity in aqueous solutions of methyl orange (MO) was investigated under visible light. The structural and optical properties of the samples were characterized using X-ray powder diffraction, Fourier-transform infrared spectroscopy, scanning electron microscopy, energy-dispersive X-ray analysis, and diffuse reflectance spectroscopy. In this work, Mn²⁺ ions in the 9%Mn/ZnO sample and Mn²⁺, Al³⁺ ions in the (9%Mn, 1.5%Al)/ZnO sample calcined at 800 °C were replaced instead with some Zn²⁺ ions in hexagonal wurtzite structures of ZnO. These structures were found next to each other in the form of a hexagonal shape that created 3D-hexagonal-like ZnO nanostructures. Finally, nanoparticles (NPs) and nano hexagonal-like ZnO nanostructures were, respectively, dispersed on the surface of 3D-hexagonal-like structure of 9%Mn/ZnO and (9%Mn, 1.5%Al)/ZnO. Diffuse reflectance spectroscopy analysis showed that the (9%Mn, 1.5%Al)/ZnO sample had more light absorption than 9%Mn/ZnO. However, contrary to our expectations, the 9%Mn/ZnO sample had better decolorization efficiency (94%) after 60 min under visible light, which could be attributed to a significant increase in the level of recombination by the aluminum ions.     

Er3+单掺、Er3+/Yb3+共掺杂Ca12Al14O32F2的 制备及上转换发光性质

利用高温固相法成功制备了Er~(3+)单掺、Er~(3+)/Yb~(3+)共掺杂Ca_(12)Al_(14)O_(32)F_2上转换发光样品。在980 nm激光激发下,Er~(3+)单掺和Er~(3+)/Yb~(3+)共掺杂样品均呈现出较强的绿光(528,549 nm)和较弱的红光(655 nm)发射,分别归因于Er~(3+)离子的~2H_(11/2),~4S_(3/2)→~4I_(15/2)和~4F_(9/2)→~4I_(15/2)能级跃迁。随着Er离子浓度的增加,单掺杂样品上转换发光强度先增大后减小,最佳掺杂浓度为0.8%。共掺杂Yb~(3+)后,Er~(3+)的发光强度明显增大。还原气氛下合成的样品上转换发光强度增大约两倍,可能和笼中阴离子基团变化有关。发光强度和激发光功率的关系表明所得上转换发射为双光子吸收过程,借助Er~(3+)-Yb~(3+)体系能级结构详细讨论了上转换发射的跃迁机制。     

固体核磁共振结合密度泛函理论计算研究SSZ-39分子筛的钠离子落位与铝分布

具有AEI结构的SSZ-39分子筛的骨架外阳离子落位和铝分布对其催化性能影响显著.AEI笼中有三个结晶学不等价位，且铝取代T位具有一定的倾向性.本文结合固体核磁共振（NMR）技术（²⁷Al/²³Na MQ MAS NMR），以及密度泛函理论（DFT）计算，研究了不同硅铝比Na-SSZ-39分子筛中的Na⁺落位和铝分布.在孤立铝分布的情况下，铝原子优先占据于T3位，Na⁺主要落位于AEI笼中的SIIa0和SIII'a0位点上，其中SIII'a0位点的优先度较高，此外少部分Na⁺还落位于六棱柱内部的SIa0.当铝对存在时，AlSiSiAl分布的铝对占据六元环的对位（T3-T3），对应的Na⁺分别落位于SIIa1和SⅢ'a1位点.随着分子筛结构的部分破坏，游离的Na⁺可能形成明显的SIII'b位点.本文可加深对SSZ-39分子筛构效关系的理解，为更好地调控催化性能奠定基础.     

The new structure type Gd3Ni7Al14

The crystal structure of Gd₃Ni₇Al₁₄ (trigadolinium heptanickel tetradecaaluminide) belongs to a family of two‐layer structures and can be described as an assembly of interpenetrating centred straight prisms. For the Ni atoms, trigonal prisms (Al₄Gd₂ and Al₆) are observed, the Al atoms are inside tetragonal (Ni₂Al₂Gd₄, Ni₂Al₄Gd₂, Al₄Gd₄, Ni₄Al₄ and Al₈) and pentagonal (Ni₄Al₆ and Al₁₀) prisms, while the Gd atoms are at the centres of pentagonal (Ni₄Al₆) and hexagonal (Ni₄Al₈) prisms. In each case, the true coordination polyhedron is a capped prism, also including atoms from the same layer. The structural features of Gd₃Ni₇Al₁₄ are similar to those of the intermetallides PrNi₂Al₃ and ZrNiAl. In all these structures, Ni‐centred trigonal prisms form infinite columns via common triangular faces. The columns share prism edges and form a three‐dimensional framework with six‐membered rings in the (001) plane in the case of the PrNi₂Al₃ and ZrNiAl types. In the case of Gd₃Ni₇Al₁₄, six‐membered rings are also observed, but only two‐thirds of the rings are interconnected via prism edges.     

A Sustainable Redox-Flow Battery with an Aluminum-Based,Deep-Eutectic-Solvent Anolyte

Nonaqueous redox-flow batteries are an emerging energy storage technology for grid storage systems, but the development of anolytes has lagged far behind that of catholytes due to the major limitations of the redox species, which exhibit relatively low solubility and inadequate redox potentials. Herein, an aluminum-based deep-eutectic-solvent is investigated as an anolyte for redox-flow batteries. The aluminum-based deep-eutectic solvent demonstrated a significantly enhanced concentration of circa 3.2 m in the anolyte and a relatively low redox potential of 2.2 V vs. Li⁺/Li. The electrochemical measurements highlight that a reversible volumetric capacity of 145 Ah L⁻¹ and an energy density of 189 Wh L⁻¹ or 165 Wh kg⁻¹ have been achieved when coupled with a I₃⁻/I⁻ catholyte. The prototype cell has also been extended to the use of a Br₂-based catholyte, exhibiting a higher cell voltage with a theoretical energy density of over 200 Wh L⁻¹. The synergy of highly abundant, dendrite-free, multi-electron-reaction aluminum anodes and environmentally benign deep-eutectic-solvent anolytes reveals great potential towards cost-effective, sustainable redox-flow batteries.     

Manipulating OH−-Mediated Anode-Cathode Cross-Communication Toward Long-Life Aqueous Zinc-Vanadium Batteries

The anode-cathode interplay is an important but rarely considered factor that initiates the degradation of aqueous zinc ion batteries (AZIBs). Herein, to address the limited cyclability issue of V-based AZIBs, Al₂(SO₄)₃ is proposed as decent electrolyte additive to manipulate OH⁻-mediated cross-communication between Zn anode and NaV₃O₈ ⋅ 1.5H₂O (NVO) cathode. The hydrolysis of Al³⁺ creates a pH≈0.9 strong acidic environment, which unexpectedly prolongs the anode lifespan from 200 to 1000 h. Such impressive improvement is assigned to the alleviation of interfacial OH⁻ accumulation by Al³⁺ adsorption and solid electrolyte interphase formation. Accordingly, the strongly acidified electrolyte, associated with the sedated crossover of anodic OH⁻ toward NVO, remarkably mitigate its undesired dissolution and phase transition. The interrupted OH⁻-mediated communication between the two electrodes endows Zn||NVO batteries with superb cycling stability, at both low and high scan rates.