A new approach for the synthesis of K-free nickel hexacyanoferrate

A Ni, Al hydrotalcite-like compound (Htlc) has been proven an useful host material for an alternative synthesis of a K⁺-free mixed hexacyanoferrate Ni_1.5Fe^III(CN)₆, which is very difficult to obtain in bulk. The first stage of the procedure consists in the intercalation of hexacyanoferrate(III) inside the Htlc structure. The intercalated Htlc has been treated with a NiNO₃ solution. The obtained material has been characterized by XRD, XAS Raman and FT-IR spectroscopy. The voltammetric response of the compound obtained after the complete solubilization of the Htlc host shows a typical fingerprint of nickel hexacyanoferrate material with a very low level of potassium. Elemental analysis confirmed the absence of K⁺ and thus the occurrence of K⁺-free nickel hexacyanoferrate (14% yield).     

Characterization and separation of Al_(13) species using gel-filtration chromatography

Polyaluminum chloride (PAC) coagulant has been developed and widely used in water and wastewater treatment industry since the 1980s[1]. PAC is normally made by partial hydrolysis of acid aluminum chloride solution using slow alkaline titration method. However, this method would result in many different Al species. Among these Al species, it seems that tridecamer (Al13O4(OH) 724 , often denoted by Al13) is the most effective and stable polymeric Al species for water and wastewater treatme…     

Rh—Mo—K／Al2O3催化剂的CO加氢合成低碳醇性能

本文研究了硫化态和还原态Ｒｈ－Ｍｏ－Ｋ／Ａｌ２Ｏ３催化剂上ＣＯ加氢合成低碳醇的反应性能，考察了不同铑负载量、钾助剂、合成气组成和反应条件（温度、压力和空速）对合成醇性能的影响及催化剂的反应稳定性。发现硫化样品较之还原态样品具有更好的合成醇选择性，催化剂中添加铑后，生成醇活性和选择性大幅度提高。选择合适的反应温度、提高反应压力和空速、适当增加合成气Ｈ２／ＣＯ的比例可以获得较好的合成醇反应性能。     

金属载体催化剂的涂层研究

在高温氧化处理不同时间的金属载体箔片上涂覆MgAl2O4/Al2O3过渡涂层,利用TG-DSC,XRD,SEM,BET和超声振动等分析测试技术,对载体和涂层的微观结构与表面特性进行研究.结果表明,在950 ℃下高温氧化5 h,箔片表面生成板状Al2O3晶须,有利于增强涂层与箔片的附着力.在载体表面涂覆一层MgAl2O4/Al2O3过渡涂层,有助于提高活性组分与金属载体的结合力,可以获得高结合强度的涂层结构,促使活性元素高度分散.     

溶胶-凝胶法制备纳米氢氧化铝溶胶

研究了利用铝酸钠溶液碳酸化产生的沉淀, 经胶溶作用制备出纳米氢氧化铝溶胶的过程. 分析了铝酸钠溶液滴加到大量碳酸氢钠溶液中时发生的反应. X射线衍射研究结果表明, 在纳米氢氧化铝溶胶制备过程中, 从无定形氢氧化铝沉淀到拟薄水铝石的晶型转变过程是氢氧化铝沉淀胶溶时溶解再析出的过程. 将碳酸氢钠加入到苛性比为1.7的铝酸钠溶液中, 中和至苛性比为1.3后, 溶液诱导期中的紫外光谱显示270 nm处的Al(OH)3-6吸收增强. 经与含铝原子六配位的晶体紫外光谱对比后表明, 在铝酸钠分解生成氢氧化铝的过程中, 其铝的配位结构从四配位转化为六配位. 拟薄水铝石溶胶粒子的形貌与胶溶所用的酸和分散剂有关.     

Studies on Natural CXN Zeolite： Modification, Framework De-alumination and Ion-exchange

A natural CXN zeolite (stilbite, type code-STI) discovered in China was modified with NH4^ exchange by using ammonium salt and calcinations (procedure Ⅰ), or with NH4 exchange followed by treatment with acid (procedure Ⅱ). The coordination state of Si and A1 atoms in the framework, the property of ion exchange, and the adsorption of the H-STI zeolite samples prepared by different modification procedure were investigated with XRD,EDX,^29Si and ^27Al MAS NMR, Ag^ ion exchange and Ne adsorption. The results of the investigations indicate that different procedure of the modification made variety on the distribution of the framework Si atoms and A1 atoms,the content of non-framework aluminum, and the blocking channels and the shielding effect to the positions of the exchangeable cations. The H-STI zeolite prepared by the procedure Ⅱ possesses high ion exchange capacity, open and perfect pore system, and high thermal stability.     

The Crystal Structure of Ba3Cu2Al2F16: a Relative of Ba4Cu2Al3F21

Ba₃Cu₂Al₂F₁₆ is monoclinic: a = 7.334(1)Å, b = 5.320(2)Å, c = 16.022(1)Å, β = 96.34(1)°, Z = 2. Its crystal structure was solved in the space group P2₁ (No. 4) from synchrotron X‐ray single crystal data using 2685 unique reflections (2639 with F_o/σ(F_o) > 4). The final R factor is 0.044. The structure consists of a succession along the c‐axis of the cell of three layers of two different kinds of sheets developing in the (a, b) plane. The first one, formulated [(AlF₅)₂]_∞^4— and hereafter named A, is built up from infinite cis‐chains of aluminium‐fluorine octahedra [AlF₆], linked by two vertices and distanced by a. The second one, formulated [Cu₂AlF₁₁]_∞^4— and named B, is bidimensional. It is constituted of distorted copper‐fluorine octahedra [CuF₆], linked by edges, which form infinite chains interconnected by three vertices of isolated [AlF₆] octahedra. The stacking sequence of the sheets is (A, B, B)_∞. The barium ions, 12‐coordinated, are inserted between the sheets. The crystal structure of Ba₃Cu₂Al₂F₁₆ is closely related to that of Ba₄Cu₂Al₃F₂₁. Only the proportion and the stacking sequence of the two kinds of sheets in the c‐direction differ, according to two different compositions and two different symmetries.     

Investigation of Al diffusion in different oxide thin-film layers by SNMS/HFM method

Depth profiles of Ga₂O₃/a-SiO₂/Al₂O₃- substrate, Ga₂O₃/a-Si₃N₄/Al₂O₃- substrate, and Ga₂O₃/Al₂O₃ substrate thin layers were determined by the SNMS/HFM method. Al diffusion from the Al₂O₃ substrate was investigated after 50, and in some cases after 600 hours of heat treatment time at different temperatures (600 °C,850 °C,950 °C,1050 °C and 1150 °C). The diffusion coefficient of Al at 850 °C was found to be D _Al=8.7 * 10^–18 cm²/s in amorphous SiO₂; D _Al=1.5*10^–17 cm²/s in amorphous Si₃N₄ and D _Al=5.5* 10^–16 cm²/s in Ga₂O₃ at 600 °C, respectively. The possible diffusion mechanism is explained in terms of the metal-oxygen bond-strengths. Although the studied materials have high resistivity at room temperature, the applied SNMS/HFM method has proven to be an efficient surface analytical tool even in these cases.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

Nano n‐propylsulfonated γ‐Al2O3: a new,efficient and reusable catalyst for synthesis of spiro[indoline‐3,4‐pyrazolo[3,4‐e][1,4]thiazepine]diones in aqueous media

Nano n‐propylsulfonated γ‐Al₂O₃ is easily prepared by the reaction of nano γ‐Al₂O₃ with 1,3‐propanesultone. This reagent can be used as an efficient catalyst for the synthesis of spiro [indoline‐3,4‐pyrazolo[3,4‐e][1,4]thiazepine]diones in aqueous media. This new method consistently has the advantages of excellent yields and short reaction times. Further, the catalyst can be reused and recovered several times. Copyright © 2013 John Wiley & Sons, Ltd.