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排序方式: 共有429条查询结果,搜索用时 343 毫秒
1.
P. Adamson 《Optics & Laser Technology》2002,34(7):561-568
The differential reflection characteristics for ultrathin inhomogeneous dielectric film on absorbing substrate are investigated in the long-wavelength approximation. The obtained first-order expressions for differential reflectivity and changes in the ellipsometric angles caused by ultrathin layer are of immediate interest to the solution of the inverse problem. The method to determine the averaged values (not the realistic profile) of refractive index for inhomogeneous nanometric films are shown. The novel possibilities for determining the dielectric constant and thickness of nanoscale homogeneous films by the differential ellipsometric and reflectivity measurements are developed, and a simple method to estimate whether the nanometric film is homogeneous or not is also discussed. 相似文献
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研究了利用磁性薄膜构造Salisbury屏的可能性及其在微波频段的反射率频率特性.结果表明,利用铁磁性材料在铁磁共振频率附近磁化率具有χ″>χ′的特性,可以构造出对电磁波有良好吸收性能的磁性Salisbury屏.通过对铁磁材料高频磁谱物理机理的分析后指出,具有弛豫型共振磁谱的铁磁材料可以构造出薄膜型Salisbury屏,其厚度为微米甚至亚微米量级.反射率的频率特性与磁性材料的特征阻抗z-r有关,它取决于铁磁共振频率和静态磁化率.反射率的频率响应显示磁性薄膜Salisbury屏具有较宽的吸收带宽.
关键词:
磁性Salisbury屏
反射率
频带响应
磁性薄膜 相似文献
5.
A. Ulyanenkov 《Applied Surface Science》2006,253(1):106-111
Several novel methods for evaluation and interpretation of X-ray data from modern nanostructures are presented along with their applications. The background of methods and their relations to fundamental problems of X-ray analysis is shortly described. The key features of LEPTOS software, which is designed for the analysis of X-ray data measured with various geometries and setups and implements all discussed techniques, are discussed. 相似文献
6.
We discuss the spectral lineshapes of reflectance and modulated reflectance (MR) measurements on optoelectronic device structures such as epi-layers, quantum wells (QWs), vertical-cavity surface emitting-lasers (VCSELs) and resonant-cavity light-emitting diodes (RCLEDs). We consider the various methods for the extraction of built-in electric fields and band-gap energies from Franz-Keldysh oscillations (FKO), using the example of a tensilely strained InGaAs QW system, whose InGaAsP barriers yield strong FKO. We describe how critical point transition energies can be easily obtained by eye from Kramers-Kronig (KK) transforms of low field or QW modulation spectra, using the example of the modulated transmittance spectra of dilute-nitrogen InGaAsN p-i-n structures. We also discuss how the ordinary reflectivity spectrum, usually acquired at the same time as the MR signal, may also be exploited to extract layer thicknesses and compositions, and information about the active QW absorption spectrum in VCSEL and RCLED structures. 相似文献
7.
Shayesteh S. Farjami B. Soltani M. A. Solimany 《International Journal of Infrared and Millimeter Waves》2002,23(12):1691-1697
We present and discuss infrared magnetoplasma reflectivity and surface polariton modes in Ga1–xNxAs. It assumed that the sample is characterized by a magnetoplasma dielectric tensor. Surface polariton dispersion for two component magnetoplasma was calculated from reflectivity spectra data. We detect transverse optic phonon of GaN sublattice in 470 cm-1. The origin of sharp feature in p-polarization reflectivity about 300 cm–1 as well as LO phonon frequency of GaAs sublattice is due to Brewster mode. An interesting feature of surface modes in Voigt geometry is nonreciprocalicity, which means that the frequency changes when the direction of propagation is reversed. Also, the infrared magnetoplasma reflectivity of GaNAs should be providing determination of the electrons and heavy holes effective mass and carrier's concentration. 相似文献
8.
X-ray reflectivity (XRR), X-ray fluorescence (XRF) and small angle X-ray scattering (SAXS) techniques are used to the monitoring of Cu/porous low κ processes, which are developed for the next generation (≤65 nm) integrated circuits. Sensitivity of XRR and XRF is sufficient to detect drifts of the copper barrier layer, copper seed layer and Cu CMP (chemical-mechanical polishing) processes. Their metrology key parameters comply with production requirements. SAXS allows determining the pore structure of low κ films: average pore size and pore size distribution. 相似文献
9.
Threshold current and differential quantum efficiency of broad contact lasers with asymmetric facet reflectivity are discussed
with the purpose to reveal factors essential for optimisation of the wall-plug efficiency of such lasers. Lasers with low
front facet reflectivity and short cavity often exhibit behaviour difficult to explain with a classical theory. More rigorous
calculation performed in this work show that differential quantum efficiency is indeed less affected by a change of the front
facet reflectivity or cavity length than predicted by such theory. These findings greatly simplify criteria for optimisation
of the wall-plug efficiency of broad contact lasers with coated facets. 相似文献
10.
Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiOxNyHz with 0.85 < x < 1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and sphere-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films. 相似文献