Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

A convenient method for the preparation of α-vinylfurans by phosphine-initiated reactions of various substituted enynes bearing a carbonyl group with aldehydes

α-Vinylfurans were obtained by phosphine-initiated cyclization of various enynes bearing a carbonyl group at the ene end in the presence of various aldehydes, in moderate to high yields. The reaction may consist of 1,6-addition of phosphine to the enynes, ring closure, and Wittig reaction between the ylid resulting from cyclization and an aldehyde. Thus, various aldehydes were able to be used in the reaction. The reaction was influenced greatly by the substituents at the acetylene position (R¹) and the α-position of the carbonyl group (R³).     

Optimization of the synthesis of non-symmetrical alkyl dimethyl sulfonium halides

This work is aimed at the optimization of the yield and purity of non-symmetrical trialkyl sulfonium halide salts. The effects of parameters such as solvent, temperature and concentration were studied. The products were carefully analyzed and the crystal structure of [{n-CH₃(CH₂)₁₅}(CH₃)₂S]Br determined. The overall aim of the present study is future syntheses of low-dimensional magnetic materials.     

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L

The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E_g2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E_g1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time.     

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

Hydroformylation in fluorous solvents

The hydroformylation of long chain alkenes under fluorous biphase conditions and in neat perfluorocarbon solvents is reviewed. Special emphasis is placed upon the authors' evaluation of the steric and electronic influence of perfluoroalkylation on catalyst activity, regioselectivity and retention in the fluorocarbon phase.     

Synthesis and stereochemical studies of di and tetra 9,9′-spirobifluorene porphyrins: new building blocks for catalytic material

We report the synthesis and stereochemical properties of a new class of molecules containing a covalently-linked porphyrin and spiro-9,9′-bifluorene derivatives. The large spiro substituents hinder rotation about the meso position to give atropisomers which can be detected by ¹H NMR after phosphine or isocyanide complexation to the ruthenium spiroporphyrins.     

镍 钴 钯 铁2—（二苯基膦基）吡啶配合物的合成及其催化羰基化反应

众所周知,铑催化剂是醇类羰基化的有效催化剂,但是铑价格昂贵且对设备有腐蚀性,因此,寻找出对醇类羰基化催化活性好的非贵金属催化剂,对醇类羰化的工业化有十分重要的意义。 本文在温和条件下,合成了四种含有相同配体(Ph_2PPy)不同金属的有机配合物(金属基分别为Ni、Co、Pd、Fe),并探索了它们对乙醇羰基化反应的催化活性。     

Effect of Ba and Bi doping on the synthesis and sintering of Ge-based apatite phases

Recently, high oxide ion conduction has been observed in the apatite-type systems La_9.33+x(Si/Ge)₆O_26+x/2, with conductivities approaching and even exceeding that of yttria-stabilized zirconia. The Ge-based phases have been reported to suffer from Ge loss and undergo irreversible structural changes on sintering at the high temperatures required to obtain dense pellets. In this paper we discuss doping studies (Ba, Bi for La) aimed at stabilizing the hexagonal apatite lattice to high temperature, and/or lowering the synthesis and sintering temperatures. The results show that doping with Ba helps to stabilize the hexagonal lattice at high temperatures, although Ge loss appears to still be a problem. Conductivity data show that, as previously reported for the Si-based systems, non-stoichiometry in the form of cation vacancies and/or oxygen excess is required to achieve high oxide ion conduction in these Ge-based systems. Neutron diffraction structural data for the fully stoichiometric phase La₈Ba₂Ge₆O₂₆ shows that the channel oxygen atoms show little anisotropy in their thermal displacement parameters, consistent with the low oxide ion conductivity of this phase. Bi doping is shown to lower the synthesis and sintering temperatures, although the presence of Bi means that these samples are not stable at high temperatures under reducing conditions.Presented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, April 10–12, 2003