Effect of silicon surface cleaning procedures on oxidation kinetics and surface chemistry

The effect of surface cleaning procedures on the kinetics of thermal oxide growth on silicon is presented. The goal is to relate the properties of the cleaned surface (composition, chemistry, impurity content) to the changes in oxide growth mechanisms. Experimentally, silicon (100) wafers were given different variations of an RCA clean, and then oxidized in dry O₂ at 900°C producing oxides with thicknesses between 170 and 3900 Å. The results, in general agreement with earlier studies, show that the percentage difference in thickness is strongly dependent on oxide thickness. The data, which are explained in terms of the predictions of a linear-parabolic and a parallel oxidation model, suggest that the surface cleans do not alter the diffusion of molecular oxygen in the oxide. Auger analysis of the surfaces shows that there is a substantial carbon contamination on the HF stripped wafer which is considerably reduced after a 5 min N₂ anneal.     

基于Alq3的有机发光器件的发光特性

以Alq₃作为发光层,在OLED串联型制作系统上成功制备出ITO/TPD/Alq₃/LiF/Al结构的有机发光器件,并建立了一套OLED电流(J)、电压(V)、亮度(B)自动测试系统,在氮气和空气环境下测试并分析了OLED的发光特性。结果表明,基于Alq₃的双层OLED的正向J-V特性可以用陷阱电荷限制流来描述;反向工作时,低压下的反偏电流可能是针孔产生的漏电流,高压下反偏OLED的J-V特性应满足F-N隧穿机制。随着电流进入快速增长阶段,B-J曲线近似地呈线性关系;在低场下,发光效率随电压升高而增大,在高场下,发光效率随电压升高而减小。实验中,还观察到了在电压V=4V左右时,器件具有明显的负阻特性(NDR),进一步的分析表明,由针孔引起的丝状电流可能是负阻特性的成因。     

Monitoring anomalous fading of TL of feldspars by using far-red emission as a gauge

TL dating of feldspars of volcanic origin is thwarted by anomalous fading of its emission in the usual spectral range from UV to red, though in the far-red range it has been shown to be stable. A new method of evaluation of this anomalous fading is proposed. The comparison is no longer made directly between total TL emissions after different storage times. Instead, TL is first measured in two spectral ranges simultaneously, the ‘blue’ one, usually monitored for fading, and the far-red one. Secondly, at every temperature the ratio of ‘blue’ to far-red, named B_ir, is computed. Thirdly, to monitor anomalous fading, these ratios are compared between different TLs. When fading shows, values of B_ir are observed to decrease during storage, according to the logarithmic law, down to very low values. A temperature dependance of anomalous fading is firmly established.     

UHV-MOCVD growth of TiO2 on SiOx/Si(1 1 1): Interfacial properties reflected in the Si 2p photoemission spectra

Metal–organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 °C and flux-limited growth at 500 °C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spectra. The cross-linking from oxidised Si to bulk Si after TTIP exposure has been found to be very similar to that of SiO_x/Si(1 1 1). However, the results show that the additional oxidation of Si most probably causes a corrugation of the SiO_x/Si interface. Those conclusions are valid for both growth modes. A model is introduced in which the amorphous interface region is described as (TiO₂)_x(SiO₂)_y where x and y changes linearly and continuously over the interface. The model quantifies how (TiO₂)_x(SiO₂)_y mixing changes the relative intensities of the signals from silicon oxide and silicon. The method can be generalised and used for the analyses of other metal-oxides on silicon.     

Linear and nonlinear critical magnetic properties and transport in Nd0.75Ba0.25MnO3 single crystal: evidence for its anomalous critical behavior near TC

The data on the resistance and magnetoresistance (MR) as well as measurements of the linear and nonlinear susceptibilities are presented for a Nd_0.75Ba_0.25MnO₃ single crystal with the Curie temperature T_C≈129 K. Although this compound remains insulating in the ferromagnetic state, its resistance has an anomaly near T_C and it reveals the colossal magnetoresistance. The data on the magnetic response are well described by the dynamic scaling theory for 3D isotropic ferromagnets in the paramagnetic critical region at τ>τ^*≈0.11, τ=(T−T_C)/T_C. Below τ^* an anomalous critical behavior is found that suggests the coexistence of two magnetic phases. This behavior is discussed in terms of a phase separation which can occur in the moderately doped manganites exhibiting an orbital ordering.     

Silica on Silicon Carbide

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising semiconductor material grows stoichiometric SiO ₂ as its native oxide. During passive oxidation, a surface transformation of SiC into silica takes place causing bulk volume and bulk mass increase. This review summarizes state-of-the-art information about the structural aspects of silicon carbide, silica, and SiC–SiO ₂ interfaces and discusses physicochemical properties and kinetics of the processes involved. A special section describes the electronic properties of carbide–oxide interfaces, which are inferior compared to Si–SiO ₂ interfaces, limiting the use of SiC-based electronics. In the oxidation of SiC there is a variety of parameters (e.g., porosity, presence of sintering aids, impurities, crystallographic orientation, surface treatment, and atmospheric composition) influencing the process. Therefore, the kinetics can be complex and will be discussed in detail. Nonetheless, a general linear-parabolic time-law can be found for most SiC materials for passive oxidation, thus indicating a mainly diffusion-controlled mechanism. The pronounced anisotropy of SiC expresses itself by quite different oxidation rates for the various crystallographic faces. Manifold impact factors are reflected by oxidation rate-constants for silicon carbide that vary over orders of magnitude. The understanding of SiC oxidation and silica formation is still limited; therefore, different oxidation models are presented and evaluated in the light of current knowledge.     

正三角型三芯光纤中等腰对称平面波的调制不稳定性分析

详细分析了正三角型三芯光纤中等腰对称平面波的调制不稳定性.等腰对称平面波即两芯中场完全相同,第三芯中场入射功率与其他两芯中不同的平面波,其存在的前提是入射光总功率(P)必须大于某最小值(P_(min)),该最小值取决于光纤的线性耦合系数和非线性系数.对一给定的总功率P≥P_(min),令一芯中的入射功率为P_1,其他两芯中入射功率均为P_2,有两种形式的场分布:一种是P_1始终大于P_2,随着P的增加,P_1越来越大,P_2越来越小,依线性稳定性分析方法,该场分布对应的增益谱主要特征与双芯光纤非对称平面波的增益谱相似;另一种是随着P的增加,P_1越来越小,P_2越来越大,使用同样的分析方法,发现该场分布下增益谱与双芯光纤非对称平面波增益谱截然不同,其显著特征是无扰动下,在正常和反常色散区域均可产生不稳定性增益,且在正常色散区域,零扰动频率对应的增益最强;另一方面,耦合系数色散对增益谱的影响在正常和反常色散区域都非常弱,这与其在双芯光纤中的影响截然不同.该结果对基于多芯光纤的模分复用系统非线性效应的研究具有一定的指导意义.     

Electron paramagnetic resonance measurements for (La,Y)2/3(Ca,Ba)1/3MnO3

We have measured the paramagnetic (PM) resonance behavior as a function of temperature for various manganese perovskites (La,Y)_2/3(Ca,Ba)_1/3MnO₃ with an average A-site size r_A basically covering the whole region of ferromagnetic (FM) metallic ground state. We show that at least three regions with different magnetic behaviors can be distinguished by two phase lines: T_onset−r_A and T_c−r_A. For each given r_A, the complete PM and long-range FM behaviors appear above T_onset and below T_c, respectively; while some anomalous PM behaviors appear for the intermediate temperature range of T_onset<T<T_c . A possible magnetic transition process is discussed in order of decreasing temperature from high-T complete paramagnetism to low-T long-range ferromagnetism.     

漫反射立方腔单次反射平均光程的理论和实验研究

根据Beer-Lambert定律可知,增加气体池的有效光程是提高气体监测灵敏度最直接而有效的途径.通过实验研究和分析,漫反射立方腔作为气体池能显著地增加有效光程,因此研究其内部的光线传播规律具有重要意义.基于对漫反射立方腔内光线传播规律的理论分析,得到了单次反射平均光程的理论值,建立了漫反射立方腔内光线传播的理论近似模型,并通过有限元法仿真获得了单次反射平均光程的模拟值.利用可调谐二极管激光吸收光谱技术得到了立方腔的有效光程,间接求得了单次反射平均光程的实验值.对理论值、模拟值和实验值进行比较分析,验证了理论近似模型和有限元法仿真的准确性和稳定性.     

Liquid–liquid phase transition and anomalous diffusion in simulated liquid GeO2

We perform molecular dynamics (MD) simulation of diffusion in liquid GeO₂ at the temperatures ranged from 3000 to 5000 K and densities ranged from 3.65 to 7.90 g/cm³. Simulations were done in a model containing 3000 particles with the new interatomic potentials for liquid and amorphous GeO₂, which have weak Coulomb interaction and Morse-type short-range interaction. We found a liquid–liquid phase transition in simulated liquid GeO₂ from a tetrahedral to an octahedral network structure upon compression. Moreover, such phase transition accompanied with an anomalous diffusion of particles in liquid GeO₂ that the diffusion constant of both Ge and O particles strongly increases with increasing density (e.g. with increasing pressure) and it shows a maximum at the density around 4.95 g/cm³. The possible relation between anomalous diffusion of particles and structural phase transition in the system has been discussed.     

HL-1M装置逃逸电子的定标律

使用一维数值模型, 推断了逃逸能量ε_r与逃逸约束时间τ_r的关系。模拟结果给出能量ε_r 和放电参数的定标律。在HL- 1M 装置中不同实验条件下测量了硬X 射线谱, 研究了逃逸电子能量 ε_r模拟的定标律, 并推导出HL- 1M 装置放电的逃逸电子的约束时间与逃逸电子扩散系数。     

Novel domain growth law in random magnets

We investigate the kinetics of domain growth in Ising magnets where a fraction 1 - p of the magnetic atoms or ions (spins) are randomly substituted by non-magnetic impurities. We argue that close to the percolation threshold p_c, the statistical self-similarity of the underlying structure gives rise to a novel crossover in the growth law. We propose a method to detect any evidence of this new prediction from the kinetics of domain growth in the dilute Ising model (DIM) during intermediate time scales by carrying out Monte Carlo simulations not at p = p_c but at slightly higher spin concentrations. We analyze the results of our extensive Monte Carlo simulation of the strongly diluted two-dimensional Ising model and find the growth to be consistent with the proposed scenario. We also compare our observations with those in the recent experiments on the kinetics of ordering in Rb₂Co_pMg_1−pF₄.     

Characteristic of ceramic coatings on aluminum by plasma electrolytic oxidation in silicate and phosphate electrolyte

In the present work, four processes were carried out to produce ceramic coatings on aluminum substrate in two kinds of electrolytes (silicate and phosphate solution systems) using plasma electrolytic oxidation (PEO) technology. The voltage-time responses were recorded during different PEO processes. SEM/EDX and XRD were adopted to investigate the microstructure, elements distribution and phase composition of the coatings prepared in the two electrolyte systems. It is found that coatings produced in the silicate electrolyte have a more homogeneous morphology than those produced in the phosphate system. EDX analysis shows that silicon element tends to present primarily in the outer region of the coatings while phosphorus distributes uniformly throughout the coating thickness. According to the conventional anodic oxidation mechanism, a model is set up to explain the different characteristics of ceramic coatings fabricated in different electrolytes which is helpful to understand the growth mechanism of PEO coatings.     

小尺寸NaLuF4:Yb3+/Tm3+纳米晶的生长及上转换发光

为了详细地探究NaLuF₄纳米晶的生长过程,利用自主研发的可以精确控制实验参数的自动纳米合成仪制备了不同系列的NaLuF₄：Yb³⁺/Tm³⁺纳米材料。对不同反应温度下（285,295,305℃）制备的样品进行物相分析,发现随着反应时间的增加,NaLuF₄纳米晶均遵循相似的生长规律,即α-相→α-相+β-相→均匀的β-相→聚集的β-相。在不同温度下,均有一个时间段可以获得小尺寸（小于50 nm）、单分散、粒径分布窄的纯β-NaLuF₄纳米晶。另外,测试了不同温度下制备的β-NaLuF₄：Yb³⁺/Tm³⁺纳米材料的上转换发射光谱,结果表明随着反应温度的升高,样品的发光先增强后减弱。出现这种光谱规律可能是受晶体尺寸和结晶性两方面因素的影响。此外,样品在紫外区的高阶多光子发光很强。例如,361 nm发射峰强度大约是800 nm发射峰强度的2倍。     

Anisotropic domain growth of the axial next-nearest-neighbor Ising model at low temperatures

We investigate the ordering kinetics for the axial next-nearest-neighbor Ising (ANNNI) model in one and two dimensions by the multispin heat bath dynamical simulation. This dynamics enables us to overcome the pinning effect and to observe the dynamical scaling law for domain growth in the ANNNI model at zero temperature. The domain growth exponent is 1/2 isotropically both in the ferromagnetic and the dry (commensurate) antiphase. In the wet (commensurate) antiphase, however, it is approximately 1/3 in the modulated direction, whereas it remains 1/2 in the nonmodulated direction. We suggest that these exponent values are dictated by 3- and 4-body diffusion-reaction processes of domain walls.     

Anomalous changes in CuO2 plane in YBa2Cu4O8 under pressure

We report the results of an atomistic simulation study of the pressure-induced structural changes in YBa₂Cu₄O₈ from 0 to 20 GPa. It is found that the crystal has similar compressibilities in the a- and b-directions over the whole pressure range, whereas in the c-direction there are quite different compressibilities at different pressures. Our results suggest that there exists a correlation between the charge transfer and the change in the Cu(2)---O(1) bond length, but we do not support the suggestion of a direct dependence of T_c on the length of this bond. However, we predict that there are anomalous changes in the CuO₂ plane with pressure, which we propose may lead to a charge carrier redistribution on in-plane copper and in-plane oxygens, which in turn may be related to the optimum carrier concentration in the CuO₂ plane.     

Temperature dependence of the exafs spectrum in YBa2Cu3O7−δ compounds

The temperature dependence of the extended X-ray absorption fine structure (EXAFS) is studied in the high T_c superconductors, YBa₂Cu₃O_7−δ. The measurements were done at the Cu K-edge for samples of two orthorhombic phases (T_c≈90 K and ≈58 K, respectively) and a nonsuperconducting tetragonal phase. Interatomic distances and mean square relative displacements σ² for Cu-O bonds are determined by the least squares refinement. The results indicate that values of σ² increase near T_c for both the orthorhombic samples. It is concluded that this anomalous behavior related to T_c is caused by an anomalous vibration of oxygen atoms in the Ba-O layer. Changes in the Cu-O distances from 300 to 20 K are not found.     

Surface modification and oxidation kinetics of hot-pressed AlN–SiC–MoSi2 electroconductive ceramic composite

The effects of oxidation on the microstructural modification and on the electrical resistivity and mechanical strength of a hot-pressed AlN–SiC–MoSi₂ electroconductive ceramic composite were studied. The kinetic of the oxidation was also evaluated. After the oxidation at temperatures below 1000 °C samples do not gain weight, due to simultaneous formation of SiO₂ and evaporation of MoO₃ formed by the oxidation of MoSi₂. However, the AlN/SiC matrix disables the “pesting” phenomena and strength degradation, despite the fact that at these temperatures MoSi₂ oxidizes rapidly. At temperatures above 1000 °C, the composite gains weight due to protective mullite layer formation on the surface, that provides a good oxidation resistance for use at higher temperatures. The kinetics of the oxidation follows the parabolic law. The possible rate-controlling mechanism is the diffusion of oxygen through the mullite-rich surface oxide scale.     

氧化钨纳米线气敏传感器的制备及其室温NO_2敏感特性

纳米结构的氧化钨有高比表面积和气体吸附能力,在气体传感器领域得到了广泛研究.本文采用磁控溅射金属钨薄膜和两步热氧化工艺在二氧化硅衬底上生长出氧化钨纳米线.通过改变第二步氧化温度,研究退火温度对氧化钨纳米线气敏特性的影响.采用扫描电子显微镜、X射线衍射仪、X射线光电子能谱分析仪和透射射电子显微镜表征材料的微观特性和晶体结构,利用静态配气法测试气敏性能.研究结果表明,经过退火处理后氧化钨纳米线密度略微降低,300℃比400℃退火后的氧化钨结晶性差,对应的表面态含量多,有利于室温气体敏感性.测试NO_2的气敏性能,经过对比得出300℃退火温度下制备的氧化钨纳米线在室温下表现出较很好的气敏响应,对6 ppm(1 ppm=10~(-6))NO_2达到2.5,对检测极限0.5 ppm NO_2响应达1.37.氧化钨纳米线在室温下表现出反常的P型响应,是因为氧化钨纳米线表面被氧气吸附形成反型层,空穴取代电子成为主要载流子所致.     

Kinetic Behavior of Exchange-Driven Growth with Catalyzed-Birth Processes

Two catalyzed-birth models of n-species （n ≥ 2） aggregates with exchange-driven growth processes are proposed and compared. In the first one, the exchange reaction occurs between any two aggregates Ak^m and Af^m of the same species with the rate kernels Km（k,j）= Kmkj （m = 1, 2,... ,n, n ≥ 2）, and aggregates of A^n species catalyze a monomer-birth of A^l species （l = 1, 2 , n - 1） with the catalysis rate kernel Jl（k,j） -Jlkj^v. The kinetic behaviors are investigated by means of the mean-field theory. We find that the evolution behavior of aggregate-size distribution ak^l（t） of A^l species depends crucially on the value of the catalysis rate parameter v： （i） ak^l（t） obeys the conventional scaling law in the case of v ≤ 0, （ii） ak^l（t） satisfies a modified scaling form in the case of v 〉 0. In the second model, the mechanism of monomer-birth of An-species catalyzed by A^l species is added on the basis of the first model, that is, the aggregates of A^l and A^n species catalyze each other to cause monomer-birth. The kinetic behaviors of A^l and A^n species are found to fall into two categories for the different v： （i） growth obeying conventional scaling form with v ≤ 0, （ii） gelling at finite time with v 〉 0.