Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

基于科赫曲线分形结构太赫兹带通滤波器

太赫兹滤波器是太赫兹通信、太赫兹成像和太赫兹检测等太赫兹应用系统中不可或缺的功能器件。按照不同的分类方式,滤波器有不同的种类,常见的按照选频功能可分为高通滤波器、低通滤波器、带阻滤波器和带通滤波器。为了实现在太赫兹波段的滤波效果,世界各地的研究人员利用不同的结构、材料和控制方式实现了功能各异的太赫兹滤波器,但是考虑到设计的器件要应用到太赫兹系统中,成本低廉、结构简单、性能优越的太赫兹滤波器一直是研究人员的追求。分形概念自提出以来在很多研究领域都有了快速发展,但是在太赫兹波段的应用还不是很常见,特别是应用于太赫兹功能器件的设计。引入分形中科赫曲线的概念设计并制备了一种新型的太赫兹带通滤波器,该滤波器是在金属薄膜上刻蚀出科赫曲线分形结构,当太赫兹波垂直入射到该滤波器时候实现了在太赫兹波段的窄带滤波。在滤波器的设计过程中,追求理论与实验相结合,首先在电磁仿真软件中建立科赫曲线分形结构滤波器模型进行计算,探究分形结构应用于太赫兹波段进行滤波的可行性,在进行多次计算之后得到优化后的尺寸和结构,然后根据优化后的尺寸加工出科赫曲线分形结构太赫兹滤波器样品,并且将样品放在太赫兹时域光谱系统中进行实验测量,得到实验数据后与仿真结果进行比较。在仿真中利用了时域有限差分法模拟科赫曲线分形结构太赫兹带通滤波器的传输特性,优化后的仿真结果表明:滤波器的谐振频率为0.715 THz,透射系数能够达到0.92,-3 dB带宽为21.9 GHz,将仿真得到的散射参数进行S参数反演得到了太赫兹滤波器样品的电磁参数,这在理论上分析了太赫兹波在谐振点处产生透射增强的原因。利用飞秒激光微加工系统制备了尺寸优化后的科赫曲线分形结构太赫兹带通滤波器样品,然后使用太赫兹时域光谱系统对样品的传输特性进行测试,对实验得到的时域数据进行快速傅里叶变换之后得到频域数据,再把频域数据进行归一化处理后与之前的电磁仿真结果进行对比,发现实验测得的结果与电磁软件仿真得到的结果较为吻合。     

A new rule of vibration sampling for predicting acoustical radiation from rectangular plates

Structural surface velocity distribution is often used to predict structural borne sound radiation. However the sampling interval of velocity should be chosen carefully to increase the prediction accuracy and to reduce the system cost. In this paper, several factors affecting the sampling interval are theoretically analyzed and discussed for a vibrating baffled rectangular plate. A new rule for the determination of the sampling interval is formulated. Using this rule, the results from both numerical simulations and experiments may be explained well.     

双奇核136La的集体带结构

通过重离子核反应与在束γ谱的实验技术, 对A=130缺中子核区的双奇核¹³⁶La的高自旋态进行了研究, 所用核反应为¹³⁰Te(¹¹B,5n). 实验结果扩展了¹³⁶La的能级纲图, 包括3个集体转动带, 最高自旋态达20h. 对于\uppi h_{11/2}\otimes \upnu h_{11/2}$~带, 观测到了旋称反转与集体回弯现象. 通过系统学比较, 对旋称反转特性进行了讨论. 由推转壳模型的计算指出, 此集体回弯是由一对中子的角动量顺排引起的. 另外两个集体带为具有~$\gamma\approx -60^\circ$~的扁椭形变带, 其可能的组态为: $\uppi h_{11/2}\otimes \upnu g_{7/2}h_{11/2}^2$~与~$\uppi g_{7/2}\otimes\upnu g_{7/2}^2 d_{5/2} h_{11/2}^2$.     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

修饰态布居的选择性激发对无反转激光的作用

以三能级V型系统为例研究修饰态布居的选择性激发对无反转激光增益的作用. 当非 相干驱动场的频谱宽度远小于驱动场产生的修饰态能级的间距时，非相干驱动场只将一个修 饰态的布居抽运至激发态. 借助原子的衰减通道，系统中形成单向布居转移通道，从而建立 修饰态布居的选择性激发. 利用修饰态布居的选择性激发，可以摆脱裸态共振无反转激光的 三个限制: (1) 不再要求辅助的低频驱动跃迁比高频激光跃迁具有更高的衰减速率；(2) 显 著降低非相干激发速率的阈值；(3) 无反转激光的线性增益不再反比于相干驱动场的强 关键词： 修饰态布居的选择性激发 无反转激光增益 原子衰减速率 非相干激发阈值速率     

激光调Q CAI

从激光调Q速率方程出发,分析推导了激光调Q过程中,腔内光子数与工作物质内反转粒子数间的关系.再根据激光调Q的过程中,对腔Q值控制方式不同,将激光调Q技术分为:转镜调Q、声光调Q、电光调Q、饱和吸收调Q和脉冲透射式调Q.用C语言进行了激光调Q CAI软件的开发研制,获得了将文学、图形、动画和计算融为一体的,直观而生动地将调Q的理论和过程再现于屏幕的CAI课件.介绍了课件的内容、结构及其特点.     

Investigation of annealing effects on the structural, magnetic and transport properties of Co/GaAs(0 0 1) thin films

Present paper deals with the structural, magnetic and transport studies of as-deposited as well as annealed Co/GaAs(0 0 1) thin film at different temperatures. The X-ray diffraction measurements show oriented growth of as-deposited Co film in the hcp (0 0 2) direction. However, the sample annealed at higher temperatures shows formation of ternary Co₂GaAs phase at the interface. Corresponding magnetic and transport measurements show decrement in magnetization and resistivity with annealing temperatures. The observed reductions in magnetization and resistivity values are mainly attributed to the formation of ternary Co₂GaAs phase at the interface.     

Structural and magnetic properties of RF sputtered FePt/Fe multilayers

Series of [FePt(4min)/Fe(t_Fe)]₁₀ multilayers have been prepared by RF magnetron sputtering and post-annealing in order to optimize their magnetic properties by structural designs. The structure, surface morphology, composition and magnetic properties of the deposited films have been characterized by X-ray diffractometer (XRD), Rutherford backscattering (RBS), scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDX) and vibrating sample magnetometer (VSM). It is found that after annealing at temperatures above 500 °C, FePt phase undergoes a phase transition from disordered FCC to ordered FCT structure, and becomes a hard magnetic phase. X-ray diffraction studies on the series of [FePt/Fe]_n multilayer with varying Fe layer thickness annealed at 500 and 600 °C show that lattice constants change with Fe layer thickness and annealing temperature. Both lattice constants a and c are smaller than those of standard ones, and lattice constant a decreases as Fe layer deposition time increases. Only a slight increase in grain size was observed as Fe layer decreased in samples annealed at 500 °C. However, the increase in grain size is large in samples annealed at 600 °C. The coercivities of [FePt/Fe]_n multilayers decrease with Fe layer deposition time, and the energy product (BH)_max reaches a maximum in the samples with Fe layer deposition time of 3 min. Comparison of magnetic properties with structure showed an almost linear relationship between the lattice constant a and the coercivities of the FePt phase.     

BELENE nuclear power plant numerical and experimental bedrock,layers and surface signals

An investigation of BELENE Nuclear Power Plant (NPP) free field signal is presented in the current study. An SH wave propagation trough multilayer geological media in the region is considered. An original structural model of the geological column has been developed. The investigated layers are isotropic, with constant depth and skyline parallel. The SH rays are with an arbitrary angle as far as the layers are concerned. The seismic SH waves have been generated by a special detonation device. The main results of the study are graphically illustrated. A comparison between the original BELENE NPP experimental and the numerical surface (free field) signals (obtained by the formulated direct problem) for the investigated geological column has been carried out and its results are hereby shown.