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1.
Effects of addition of CuO layers in L10-type FePt thin films are investigated. The ordering temperature of L10-type FePt films can be reduced by CuO addition. The coercivities of 0.78 and 0.82 T are achieved in [Pt(10 Å)/Fe(14 Å)/CuO(2 Å)]10 film annealed at 550 °C for 20 min and [Pt(10 Å)/Fe(15 Å)/CuO(3 Å)]10 film annealed at 600 °C for 20 min, respectively, and these values are compared to the coercivity of 0.8 T in [Pt(10 Å)/Fe(13 Å)]10 film annealed at 650 °C. The thickness of Fe and CuO layers strongly influences the ordering temperature of L10-type FePt and the magnetic properties of the films. The addition of CuO not only brings microstructure and surface morphology changes of FePt film, but also lowers the ordering temperature.  相似文献   

2.
In this paper, we report on the production of Fe cluster/FePt matrix nanocomposite permanent magnets. Monodispersed Fe clusters with sizes below 10 nm were formed by gas aggregation techniques. These Fe clusters were imbedded in an FePt matrix by alternate deposition from two sources. Specimens with a range of Fe cluster phase content from 0 to 30 vol% were produced by controlling deposition times from each source. As-deposited FePt formed in the A1 structure; thus, post-deposition heat treatment was necessary to form the hard magnetic L10 FePt compound. A single-step heat treatment at 600 °C for 10 min leads to nanocomposite structures with excellent magnetic properties. The coercivity decreased with increasing Fe cluster content, while the energy product initially increased, reaching a maximum of almost 18 MGOe, and then decreased at higher Fe cluster content. Secondary heat treatment at 500 °C significantly improved the magnetic properties when compared with the single-step heat treatment at 600 °C. Increased coercivity and remanence was observed, resulting in energy products of 21 MGOe. The energy products are close to 70 percent greater than expected for uncoupled systems.  相似文献   

3.
The Au/FePt samples were prepared by depositing a gold cap layer at room temperature onto a fully ordered FePt layer, followed by an annealing at 800 °C for the purpose of interlayer diffusion. After the deposition of the gold layer and the high-temperature annealing, the gold atoms do not dissolve into the FePt Ll0 lattice. Compared with the continuous FePt film, the TEM photos of the bilayer Au(60 nm)/FePt(60 nm) show a granular structure with FePt particles embedded in Au matrix. The coercivity of Au(60 nm)/FePt(60 nm) sample is 23.5 kOe, which is 85% larger than that of the FePt film without Au top layer. The enhancement in coercivity can be attributed to the formation of isolated structure of FePt ordered phase.  相似文献   

4.
Yttrium iron garnet (YIG) thin films were deposited on fused quartz substrate at different substrate temperatures (Ts) varying from room temperature (RT) to 850 °C using pulsed laser deposition (PLD) technique. All the films in the as-deposited state were X-ray amorphous and non-magnetic at RT. The film deposited at RT after annealing at temperatures Ta?700 °C showed both X-ray peaks and the magnetic order. The films deposited at higher Ts (500–850 °C) and then annealed at 700 °C resulted in better-quality films with higher 4πMs value. The highest value of magnetization was for the sample deposited at 850 °C and annealed at 700 °C, which is 68% of the bulk 4πMs value.  相似文献   

5.
L10-ordered FePt thin films prepared by molecular-beam epitaxy on MgO (0 0 1) substrate at 320 °C with different thickness of Pt buffer layer have been investigated. The out-of-plane coercivity increases with increasing thickness of Pt buffer. The maximum values of the long-range order parameter and uniaxial magnetic anisotropy energy are 0.72 and 1.78×107 erg/cm3, respectively, for films with 12 nm thick Pt buffer layer, where the c/a ratio (0.976) shows the minimum value. The reason for the enhancement in ordering is due to the proper lattice strains Pt buffer bestows on FePt layer, these strains are equal to the contraction in lattice parameter c and the expansion in a. Studies of angular-dependent coercivity revealed that the magnetization reversal behaviour shifts from a domain-wall motion dominated case towards a near rotational mode with increasing thickness of Pt buffer layer.  相似文献   

6.
The effect of Cr100−xTix underlayer on orderd-L10 FePt films was investigated. A low-temperature ordering of FePt films could be attained through changing the Ti content of Cr100−xTix underlayer. The ordering temperature of the 30 nm FePt film grown on 20 nm Cr90Ti10 underlayer was reduced to 250 °C which is practical manufacture process temperature. An in-plane coercivity was very high to 6000 Oe and a ratio of remnant magnetization (Mr) to saturation magnetization (Ms) was as large as 0.85. This result indicates that the coercivity obtained at 250 °C by the effect of CrTi underlayer is significantly higher than those obtained at 250-275 °C by the effect of underlayers in other conventional studies. The prominent improvement of the magnetic properties of ordered FePt thin films at low temperature of 250 °C could be understood with considering the strain-induced ordering phase transformation associated with lattice mismatch between Cr underlayer and FePt magnetic layer due to an addition of Ti content.  相似文献   

7.
A method based on strain-induced phase transformation was used to lower the ordering temperature of FePt films. The strain resulted from the lattice mismatch between the FePt film and the substrate or underlayer favored the ordering. The relationships between the lattice mismatch, the ordering of FePt film, and the corresponding magnetic anisotropic constant were investigated. A critical lattice mismatch near 6.33% was believed to be most suitable for improving the chemical ordering of the FePt films. CrX (X=Ru, Mo, W, Ti) alloys with (2 0 0) texture was used to control the easy axis and ordering temperature of FePt films on glass substrate. Large uniaxial anisotropy constant Ku?1×107 erg/cm3, good magnetic squareness (∼1) and FePt(0 0 1) texture (rocking curve −5°) were obtained at the temperature Ts?250 °C when using CrRu underlayer. The diffusion from overlying layers of Ag and Cu and an inserted Ag pinning layer were effective in reducing the exchange decoupling and changing the magnetization reversal. The media noise was effectively reduced and the SNR was remarkably enhanced when a 2 nm Ag was inserted.  相似文献   

8.
FePt multilayer films with and without Al underlayer were prepared by magnetron sputtering on SiO2 substrate and subsequently annealed in vacuum. Experimental results suggest that the existence of Al underlayer can effectively reduce the ordering temperature and increase the coercivity of FePt films. Due to the slight larger lattice constant of Al underlayer than that of FePt films, [Fe (0.66 nm)/Pt (0.84 nm)]30 films begin to order at 350 °C and the coercivity of them reach to 5.7 kOe after annealing at 400 °C for half an hour.  相似文献   

9.
High-coercivity Au(60 nm)/FePt(δ nm)/Au(60 nm) trilayer samples were prepared by sputtering at room temperature, followed by post annealing at different temperatures. For the sample with δ=60 nm, L10 ordering transformation occurs at 500 °C. Coercivity (Hc) is increased with the annealing temperature in the studied range 400–800 °C. The Hc value of the trilayer films is also varied with thickness of FePt intermediate layer (δ), from 27 kOe for δ=60 nm to a maximum value of 33.5 kOe for δ=20 nm. X-ray diffraction data indicate that the diffusion of Au atoms into the FePt L10 lattice is negligible even after a high-temperature (800 °C) annealing process. Furthermore, ordering parameter is almost unchanged as δ is reduced from 60 to 15 nm. Transmission electron microscope (TEM) photos indicate that small FePt Ll0 particles are dispersed amid the large-grained Au. We believe that the high coercivity of the trilayer sample is attributed to the small and uniform grain sizes of the highly ordered FePt particles which have perfect phase separation with Au matrix.  相似文献   

10.
Solution Growth Technique (SGT) has been used for deposition of Zn1−xCdS nanocrystalline thin films. Various parameters such as solution pH (10.4), deposition time, concentration of ions, composition and deposition and annealing temperatures have been optimized for the development of device grade thin film. In order to achieve uniformity and adhesiveness of thin film on glass substrate, 5 ml triethanolamine (TEA) have been added in deposition solution. The as-deposited films have been annealed in Rapid Thermal Annealing (RTA) system at various temperature ranges from 100 to 500 °C in air. The changes in structural formation and optical transport phenomena have been studied with annealing temperatures and composition value (x). As-deposited films have two phases of ZnS and CdS, which were confirmed by X-ray diffraction studies; further the X-ray analysis of annealed (380 °C) films indicates that the films have nanocrystalline size (150 nm) and crystal structure depends on the films stoichiometry and annealing temperatures. The Zn0.4CdS films annealed at 380 °C in air for 5 min have hexagonal structure where as films annealed at 500 °C have represented the oxide phase with hexagonal structure. Optical properties of the films were studied in the wavelength range 350-1000 nm. The optical band gap (Eg=2.94-2.30 eV) decreases with the composition (x) value. The effect of air rapid annealing on the photoresponse has also been observed on Zn1−xCdS nanocrystal thin films. The Zn1−xCdS thin film has higher photosensitivity at higher annealing temperatures (380-500 °C), and films also have mixed Zn1−xCdS/Zn1−xCdSO phase with larger grain size than the as-deposited and films annealed up to 380 °C. The present results are well agreed with the results of other studies.  相似文献   

11.
The (γ′-Fe4N/Si-N)n (n: number of layers) multilayer films and γ′-Fe4N single layer film synthesized on Si (1 0 0) substrates by direct current magnetron sputtering were annealed at different temperatures. The structures and magnetic properties of as-deposited films and films annealed at different temperatures were characterized using X-ray diffraction, scanning electron microscopy and vibrating sample magnetometer. The results showed that the insertion of Si-N layer had a significant influence on the structures and magnetic properties of γ′-Fe4N film. Without the addition of Si-N lamination, the iron nitride γ′-Fe4N tended to transform to α-Fe when annealed at the temperatures over 300 °C. However, the phase transition from γ′-Fe4N to ?-Fe3N occurred at annealing temperature of 300 °C for the multilayer films. Furthermore, with increasing annealing temperature up to 400 °C or above, ?-Fe3N transformed back into γ′-Fe4N. The magnetic investigations indicated that coercivity of magnetic phase γ′-Fe4N for as-deposited films decreased from 152 Oe (for single layer) to 57.23 Oe with increasing n up to 30. For the annealed multilayer films, the coercivity values decreased with increasing annealing temperature, except that the film annealed at 300 °C due to the appearance of phase ?-Fe3N.  相似文献   

12.
In the present paper, we investigate the effect of thermal annealing on optical and microstructural properties of HfO2 thin films (from 20 to 190 nm) obtained by plasma ion assisted deposition (PIAD). After deposition, the HfO2 films were annealed in N2 ambient for 3 h at 300, 350, 450, 500 and 750 °C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), UV Raman and FTIR were used for the physical characterisation of the as-deposited and annealed HfO2 thin films. The results indicate that as-deposited PIAD HfO2 films are mainly amorphous and a transition to a crystalline phase occurs at a temperature higher than 450 °C depending on the layer thickness. The crystalline grains consist of cubic and monoclinic phases already classified in literature but this work provides the first evidence of amorphous-cubic phase transition at a temperature as low as 500 °C. According to SE, XRR and FTIR results, an increase in the interfacial layer thickness can be observed only for high temperature annealing. The SE results show that the amorphous phase of HfO2 (in 20 nm thick samples) has an optical bandgap of 5.51 eV. Following its transition to a crystalline phase upon annealing at 750 °C, the optical bandgap increases to 5.85 eV.  相似文献   

13.
Interlayer exchange coupling in dc-magnetron sputtered Tb29.6Co70.4/FePt bilayers with different annealing temperatures of the FePt film have been investigated. The dependence of ordering degree on perpendicular magnetic properties of the FePt film was studied. The Tb29.6Co70.4/FePt film has high perpendicular coercivity and high saturated magnetization about 7.5 kOe, and 302 emu/cm3, respectively as the substrate temperature is 500 °C and annealing at 500 °C for 30 min. It also shows a strong exchange coupling between this FePt layer and Tb29.6Co70.4 layer. We also examined the interface wall energy in the exchange coupled Tb29.6Co70.4/FePt double layers.  相似文献   

14.
In this study, effect of lanthanum substitution on the phase composition, lattice parameters and magnetic properties of barium hexaferrite has been studied in samples synthesized in ammonium nitrate melt. Samples, prepared with different lanthanum amount and having various initial Fe/(Ba+La) ratios in between 12 and 2 {(Ba1−xLaxn Fe2O3, where 0≤x≤1 and 1≤n≤6)}, are sintered at temperatures from 800 to 1200 °C. The lattice parameters, both a and c, decreases with increasing La amount which results in a decrease of the unit cell volume. The scanning electron microscope micrographs show that the pure and La-substituted sample with x=0.3, both calcinated at 1000 °C, have grain sizes smaller than 1 μm. The coercivities of the La-substituted samples increase with increasing La amount and reaches to a maximum value of 5.73 kOe, when x=0.3. Sintering at higher temperatures (above 1000 °C) decreases the coercivity, resembling a transition from single to multi-domain behavior of the particles, while saturation magnetization of the samples continues to increase due to the increasing grain size. Magnetization measurements of the samples prepared with different Fe/(Ba+La) molar ratios, n's, revealed that the specific saturation magnetization slightly increases with decreasing n, while coercivities fluctuates around 5.5 kOe. However, a sharp increase in the saturation magnetization has been observed in the sample having n=1 and washed in HCl. It was measured as 59.2 emu/g at 15 kOe, which is higher than that of the pure sample (57.5 emu/g). Thus, the magnetic parameters are optimized in the sample Ba0.7La0.3Fe12O19 so as to maximize both coercivity and specific saturation magnetization in the HCl-washed sample synthesized by starting with an unusually low Fe/(Ba+La) molar ratio of 2 (or n=1).  相似文献   

15.
FexPt100−x(30 nm) and [FexPt100−x(3 nm)/ZrO2]10 (x = 37, 48, 57, 63, 69) films with different ZrO2 content were prepared by RF magnetron sputtering technique, then were annealed at 550 °C for 30 min. This work investigates the effect of ZrO2 doping on the microstructural evolution, magnetic properties, grain size, as well as the ordering kinetics of FePt alloy films. The as-deposited films behaved a disordered state, and the ordered L10 structure was obtained by post-annealing. The magnetic properties of the films are changed from soft magnetism to hard magnetism after annealing. The variation of the largest coercivities of [FexPt100−x/ZrO2]10 films with the Fe atomic percentage, x and differing amounts of ZrO2 content reveals that as we increase the ZrO2 content we must correspondingly increase the amount of Fe. This phenomenon suggests that the Zr or O atoms of ZrO2 preferentially react with the Fe atoms of FePt alloy to form compounds. In addition, introducing the nonmagnetic ZrO2 can reduce the intergrain exchange interactions of the FePt/ZrO2 films, and the interactions are decreased as the ZrO2 content increases, the dipole interactions are observed in FePt/ZrO2 films as the ZrO2 content is more than 15%.  相似文献   

16.
In order to find evidence of the ferromagnetic interaction, the crystal structure and the magnetic property of pure Fe are investigated from room temperature to 950 °C by measuring X-ray diffraction patterns and magnetizations. The ferro–paramagnetic transition occurs near 770 °C with large stretch and contraction of lattice constants, which is an evidence of correlation of ferromagnetism and crystal structure. The structural phase transition between α-bcc and γ-fcc is observed above 850 °C. The d-spaces between (011) and (101) planes, observed with a high resolution triple-axis X-ray diffractometer, differ at RT; Δd≡d101d011≈0.45%. The structure of Fe is pseudocubic, showing a body-centered tetragonal structure of c/a<1 generated by magnetostriction (exchange striction) induced by spontaneous magnetization.  相似文献   

17.
The microstructure and magnetic properties of FePt films grown on Cr and CrW underlayers were investigated. The FePt films that deposited on Cr underlayer show (2 0 0) orientation and low coercivity because of the diffusion between FePt and Cr underlayer. The misfit between FePt magnetic layer and underlayer increases by small addition of W element in Cr underlayer or using a thin Mo intermediate layer, which is favorable for the formation of (0 0 1) orientation and the transformation of FePt from fcc to fct phase. A good FePt (0 0 1) texture was obtained in the films with Cr85W15 underlayer with substrate temperature of 400 °C. The FePt films deposited on Mo/Cr underlayer exhibit larger coercivity than that of the films grown on Pt/Cr85W15 because 5 nm Mo intermediate layer depressed the diffusion of Cr into magnetic layer.  相似文献   

18.
We have explored the interlayer diffusion effect of Ge/FePt, GePt/FePt bilayer on the formation of ordered L10 FePt phase. In Ge/FePt bilayer, the Ge3Pt2 compound was formed during post annealing at 400oC for 1.0 h. Diffusion between Ge and FePt layer suppres the formation of ordered L10 FePt phase. With Ge2Pt3 underlayer, the FePt film was ordered at 400 °C and the in-plane coercivity was 9.3 kOe. The ordering temperature was reduced about 50 °C compared to the single layer FePt film.  相似文献   

19.
Granular L10 FePt (0 0 1) thin films were deposited on a Si substrate with Ta/MgO underlayers by rf sputtering. The effects of in-situ heating temperatures (350-575 °C), pressures (2-40 mTorr), and sputtering powers (15-75 W) on texture and microstructure were investigated for the FePt films. We obtained films with grain densities approaching 50 teragrains per in.2, grains sizes down to 2.2 nm with center-to-center spacing of 4.2 nm and coercivity of 24 kOe. The order parameters for the L10 FePt thin films were derived and calculated to be as high as 0.91. Although the grain size is small, the spacing between grains is too large for practical heat assisted magnetic recording media. To reach the desired results, we propose that layer-by-layer growth should be promoted in the FePt layer by inserting another underlayer that provides a better lattice match to L10 FePt.  相似文献   

20.
Influence of both substrate temperature, Ts, and annealing temperature, Ta, on the structural, electrical and microstructural properties of sputtered deposited Pt thin films have been investigated. X-ray diffraction results show that as deposited Pt films (Ts = 300, 400 °C) are preferentially oriented along (1 1 1) direction. A little growth both along (2 0 0) and (3 1 1) directions are also noticed in the as deposited Pt films. After annealing in air (Ta = 500-700 °C), films become strongly oriented along (1 1 1) plane. With annealing temperature, average crystallite size, D, of the Pt films increases and micro-strain, e, and lattice constant, a0, decreases. Residual strain observed in the as deposited Pt films is found to be compressive in nature while that in the annealed films is tensile. This change in the strain from compressive to tensile upon annealing is explained in the light of mismatch between the thermal expansion coefficients of the film material and substrate. Room temperature resistivity of Pt films is dependant on both the Ts and Ta of the films. Observed decrease in the film resistivity with Ta is discussed in terms of annihilation of film defects and grain-boundary. Scanning electron microscopic study reveals that as the annealing temperature increases film densification improves. But at an annealing temperature of ∼600 °C, pinholes appear on the film surface and the size of pinhole increases with further increase in the annealing temperature. From X-ray photoelectron spectroscopic analysis, existence of a thin layer of chemisorbed atomic oxygen is detected on the surfaces of the as deposited Pt films. Upon annealing, coverage of this surface oxygen increases.  相似文献   

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