光学共振增强的表面铯激活银纳米结构光阴极

金属光阴极因其超短脉冲发射和运行寿命长的特性从而具有重要应用价值,但是较高的功函数和较强的电子散射使其需要采用高能量紫外光子激发且光电发射量子效率极低.本文利用Mie散射共振效应增强银纳米颗粒中的局域光学态密度,提升光吸收率和电子的输运效率,并利用激活层降低银的功函数,从而增强光阴极在可见光区的量子效率.采用时域有限差分方法分析银纳米球阵列的光学共振特性,采用磁控溅射和退火工艺在银/氧化锡铟复合衬底上制备银纳米球,紧接着在其表面沉积制备铯激活层,最后在高真空腔体中测试光电发射量子效率.实验结果表明平均粒径150 nm的银纳米球光阴极在425 nm波长的量子效率超过0.35%,为相同激活条件下银薄膜光阴极的12倍,峰值波长与理论计算的Mie共振波长相符合.     

GaN氢化物气相外延生长系统的设计与制作

根据GaN氢化物气相外延生长(HVPE)的原理,设计制作了双温区卧式HVPE系统．根据实际生长中出现的问题和CaN样品的测试情况,对系统进行了逐步的调试和改进．     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy

We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm²/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (N_s) for the first time. N_s increased from 1.0×10¹² to 2.7×10¹³ cm⁻² when the Al composition increased from 0.78 to 0.89.     

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface.     

Effect of plasma treatment on interface property of BCN/GaN structure

Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N₂) and hydrogen (H₂) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 10¹⁰ eV⁻¹ cm⁻² for the BCN/GaN structure with mixed N₂ and H₂ plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 10¹⁰ eV⁻¹ cm⁻² is maintained.     

GaN基紫光LED的高反射率p型欧姆接触

研究用于GaN基大功率倒装焊(Flip-chip)紫光LED(UV-LED)的高反射率p型欧姆接触的电学和光学性能。用磁控溅射的方法在GaN基LED外延片表面沉积了不同厚度Ag,Al,Au和Pd四种金属,测量了样品的反射率和透射率。结合同步辐射高强度X射线衍射和AFM对金属薄膜的晶体结构进行分析,并对表面形貌进行了观测,对由金属薄膜构成的多层膜结构及其对光反射率的作用机理进行了研究。测量结果表明,在入射光波长为400nm时,Ni/Au/Ag和Ni/Au/Al电极的反射率比Ni/Au的反射率提高了三倍。同时与p-GaN有良好的欧姆接触特性。     

Study of the structural and optical properties of GaN/AlN quantum dot superlattices

We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength.     

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×10¹² cm⁻² and a Hall mobility of 1800 cm²/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance g_m of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001).     

三代像增强器用微通道板的改进与发展

简要说明了三代像增强器的特点，分析了微通道板的离子反馈形成机理，给出有效抑制离子反馈对光阴极造成伤害的2种方法，即一种是减少和清除微通道板的吸附气体，另一种是阻止反馈离子反馈到光阴极上。介绍了国外最新的三代像增强器，以及使用优化改进的高性能微通道板显著减薄甚至彻底去除微通道板离子反馈膜的方法，该方法能维持砷化镓光阴极足够长的工作寿命，还介绍了最新发展的体导电微通道板和硅微通道板。指出高可靠性无膜选通砷化镓像增强器技术的实现，不仅需要微通道板在抑制离子反馈方面取得突破，还需要砷化镓光阴极在耐受离子反馈能力上进一步提高，同时还要结合和拓展选通电源的应用。