| GaN氢化物气相外延生长系统的设计与制作 |
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| 引用本文： | 卢佃清,修向前.GaN氢化物气相外延生长系统的设计与制作[J].物理实验,2006,26(3):16-18. |
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| 作者姓名： | 卢佃清 修向前 |
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| 作者单位： | 1. 淮海工学院,数理科学系,江苏,连云港,222005
2. 南京大学,物理系,江苏,南京,210093 |
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| 摘 要： | 根据GaN氢化物气相外延生长(HVPE)的原理,设计制作了双温区卧式HVPE系统．根据实际生长中出现的问题和CaN样品的测试情况,对系统进行了逐步的调试和改进．
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| 关 键 词： | 氢化物气相外延 GaN 双温区 |
| 文章编号： | 1005-4642（2006）03-0016-03 |
| 收稿时间： | 2005-08-27 |
| 修稿时间： | 2005年8月27日 |
Design and making of hydride vapor phase epitaxy system for growing GaN |
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| LU Dian-qing,XIU Xiang-qian.Design and making of hydride vapor phase epitaxy system for growing GaN[J].Physics Experimentation,2006,26(3):16-18. |
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| Authors: | LU Dian-qing XIU Xiang-qian |
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| Institution: | 1. Department of Mathematics and Physics, Huaihai Institute of Technology, Lianyungang 222005, China~ 2. Department of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | Based on the principle of hydride vapor phase epitaxy (HVPE) growth for GaN, a horizontal HVPE system with double-temperature area is designed and made up. According to the problems in practical growing and test results of GaN sample, the system is debugged and improved. |
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| Keywords: | hydride vapor phase epitaxy GaN dual-temperature area |
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