“神龙一号”注入器研制

“神龙一号”注入器是直线感应加速器的束流源，它采用了感应叠加的高压加载方式，包括脉冲功率系统、感应腔、阴阳极杆、绝缘支撑、二极管和束流传输系统等子系统. 在研制中采用了径向绝缘支撑、对中支撑调节系统、类Pierce阴极等先进技术，以及二极管线圈内置和外径为800mm的铁氧体大环等创新. 参数测试显示，3.5MeV注入器达到了世界先进水平.     

双阳极磁控注入枪束流特性的研究

 介绍了用于34GHz基波回旋速调管的双阳极磁控注入枪的结构特点，为了准确分析磁控注入枪的束流特性，建立了阴极表面理论模型，用新编制的程序模拟了电子轨迹。模拟和测量结果显示磁场对磁控注入枪的束流有影响，磁控注入枪的束流也与阴极温度和空间电荷效应有关系。     

}MSo浸种对大麦种子萌发及若干性状的影响

本文报道二甲亚矾(DMSO)浸种影响大麦“早熟3号”种子的萌发以及浸种后种子的渗漏和呼吸强度等的变化.结果表明:在24℃条件干浸种，。.1%和5芳的DMSO明显促进种子的萌发，5劣DMSO浸种的促进作用尤为明显.然而这种影响效应在zs c条件下浸种则完全相反，对种子萌发有抑制作用，表现明显的温度效应.     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

准粒子注入下超导膜能隙变化的一些计算

利用 Schn-Tremblay 理论计算了 Pb、Sn 超导薄膜在注入准粒子且注入电压很小(ev<2△(?))时的能隙微小增加的效应.同时,把此理论扩展到 ev>>2△_i 的大电压情况,计算出能隙明显减小及超导-正常混合态的结果.     

A New Cytotoxic Acetogenin from the Seeds of Annona squamosa

A New Annonaceous acetogenin,squamostolide(1),was isolated from the seeds of Annona squamosa.Its structure was elucidated based on spectroscopic methods and comparison with known compounds.It is the first example of Annonaceous acetogenin with each of the two ends of the aliphatic chain bearing a γ-lactone.Thenew compound exhibited cytotoxic activity in vitro against bel-7402 and CNE2 human tumor cell lines.     

激光与材料参数对瞬态SBS 诱导的激光超声破坏效果的影响

 通过数值求解一维瞬态受激布里渊散射（SBS）声光耦合波方程，从理论上分析了泵浦激光参数及光学材料参数对SBS过程发生阈值的影响。以SBS过程中建立起来的应力场抗拉（压）强度和散射场的反射率为判据，分析了激光脉宽及作用区域长度对激光超声破坏材料效果的影响，探讨了短脉冲激光（约ns）引起的激光超声对材料的破坏机理；讨论了通过参数配置有效遏制SBS过程激光超声对光学材料的破坏问题。     

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.