Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering

Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.     

新型类石墨烯二维晶体材料——锗烯的研究获进展

<正>近日,中国科学院武汉物理与数学研究所曹更玉研究组与中国科学院物理研究所高鸿钧院士研究组合作,在新型类石墨烯二维晶体材料——锗烯的制备研究方面取得新进展,相关研究结果与中科院物理所以共同第一作者单位合作发表在Advanced Materials(2014,26,4820)杂志上。近年来石墨烯研究在世界范围内掀起热潮。到目前为止,研究人员已相继制备出碳元素构成的石墨烯和硅元素构成的硅烯,并探索其蜂窝状结构非同寻常的电子学性质。随着对石墨烯研究的不断深入,研究人     

硅元素对土壤中有效营养元素的影响

本文研究了硅元素对土壤中有效营养元素的影响。研究结果表明，该元素提高土壤对有效氮，钾的供给能力，调节铁锰比例和钙，锌，锰的供给。施硅量适当时，可使甘蔗增加产量和含糖分。     

Structure Stability of LaAlO3 Thin Films on Si Substrates

A series of amorphous and single-crystalline LaAlO3 （LAO） thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin films.     

Focusing Properties of Fractal Zone Plates with Variable Lacunarity：Experimental Studies Based on Liquid Crystal on Silicon

The focusing properties of fractal zone plates （FZPs） with different structure parameters are studied experimentally. The axial irradiance of FZPs is deduced at n=4. The experimental results are in good agreement with the theoretical prediction. A method to fabricate FZPs with variable structure parameters is mentioned, and the liquid-crystal-on-silicon device is used to implement this experiment. The experimental results indicate that the focal depth of lower order FZPs is larger than that of higher order FZPs.     

硅元素的发现及其概念的发展

通过对硅元素发现历程的考证分析可知,17、18世纪随着科学实验的兴起以及元素观的发展,科学家以实践为基础,运用逻辑思维和直觉思维预见了硅元素的存在;19世纪随着电化学和分析化学的发展,科学家们成功制取无定形硅和晶体硅;20世纪30年代,硅同位素的发现使人们对硅元素的概念有了新认识。总之,随着科学思想的演进和科学方法的发展,硅元素概念的内涵也在不断发展变化。     

Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers

Oxygen precipitation within the magic denuded zone （MDZ） founded by rapid thermal processing in Czochralski silicon （CZ-Si） wafers is investigated. After the standard MDZ process, the CZ-Si wafers are further subjected to two specific oxygen precipitation annealing, respectively. It is found that the MDZs in CZ-Si wafers shrunk notably because oxygen precipitation occurs within the MDZs. However, a width of substantial DZ still remains within the wafer. Therefore, it is believed that the outer region of the MDZs, which corresponds to the oxygen denuded zone formed in the course of rapid thermal process and high temperature annealing, is a substantial defect-free zone which acts as the active area for semiconductor devices.     

硅元素的发展及其在生产科技与生活中的应用

半导体材料硅，在第三周期IVA族，核外有4个电子，具有较稳定的结构。简述了硅的发展应用史；从化学角度，对单质硅材料、二氧化硅材料、有机硅材料等几个典型材料的元素结构、制备工艺、反应机理和应用机理等方面进行详细分析；总结展望了硅元素未来的发展。     

Geometry Parameter Optimization of Large Cross-Sectional S-Shaped Bent Rib Waveguides for Silicon Based Optical Switches

By using a genetic algorithm, geometry parameters of large cross-sectional S-bend rib waveguides are optimized aiming at the least total loss when the propagation loss is considered. Optimized results axe presented as an example of S-bend rib waveguides based on silicon-on-insulator （SOI） 4 × 4 optical switches. The value of 2 dB/cm is given to the propagation loss according to the experimental results. The simulation results indicate that the total loss drops from 1.0002rib down to 0.4375dB without considering a lateral offset. If the offset is adopted, the total loss reduces from 0.5463dB to 0.2365dB. In addition, the effect of the rib height ratio on the loss is analysed, and the optimal ratio is obtained to be 0.55.