Quantitative conditions for the formation of p-wave neutron halos

With the experimental binding energies and configurations, the root-mean-square radii of p-wave valence neutron distributions for nuclei up to the second p-shell have been calculated in the framework of the single-particle potential model. By analyzing the relations between the radii and the binding energies, the scaling laws of p-wave valence neutron distributions are obtained. The quantitative conditions for the formation of p-wave neutron halos are deduced from these scaling laws. Based on the investigation on the probability of finding the valence nucleon outside the range of the interaction potential, a 2p_3/2 halo state in ⁴⁷S is anticipated for the first time. These obtained results might provide reference for searching for p-wave neutron halos in nuclei up to the second p-shell.     

基于Si-rich SiNx/N-rich SiNy多层膜结构的量子点构筑及发光特性

利用等离子体增强化学气相沉积法制备Si-rich SiN_x/N-rich SiN_y多层膜,分别使用热退火和激光辐照技术对多层膜进行退火,以构筑三维限制、尺寸可控、有序的硅纳米晶.实验结果表明,经退火后,纳米硅晶粒在Si-rich SiN_x子层内形成,其尺寸可由Si-rich SiN_x子层厚度调控.实验还发现,激光辐照技术相比于热退火能更有效地改善多层膜的微结构,提高多层膜的晶化率,以激光技术诱导晶化的Si-rich SiN_x/N-rich SiN_y多层膜作为有源层构建电致发光器件,在室温下观察到了增强的电致可见发光,并且发光效率较退火前提高了40%以上. 关键词： 氮化硅 多层膜 限制结晶 纳米晶硅     

富硅a-SiOxNy：H薄膜的电致发光特性

采用甚高频等离子体增强化学气相沉积方法制备富硅氮氧化硅(a-SiO_0.35N_0.59:H)薄膜,以这层薄膜作为有源层构建发光二极管。实验结果表明器件在室温下可观测到强的电致红光发射,发光峰在715 nm附近,与其光致发光峰位一致。电致发光谱测量还表明器件开启电压为8 V,器件的电致发光强度随注入电流的增大呈线性递增关系。电流-电压特性分析表明器件的载流子输运机制以Pool-Frenkel(P-F)发射模型为主。结合发光有源层的微结构分析,初步认为电致红光发射来自于电子和空穴通过有源层的带尾态的辐射复合。     

基于纳米硅结构的氮化硅基发光器件电致发光特性研究

利用等离子体增强化学气相沉积法制备了镶嵌于氮化硅的高密度纳米硅薄膜,并以此作为发光有源层构建基于p-Si/氮化硅基发光层/AZO结构发光二极管,在室温下观察到了电致可见发光.在此基础上,在器件p-Si空穴注入层与氮化硅基发光层之间加入纳米硅薄层作为空穴阻挡层,研究器件电致发光性质,实验结果表明器件的发光强度显著增强,并且发光效率较无纳米硅阻挡层的发光器件提高了80%以上.     

同位旋效应对F同位素s-d能级间隙的影响

在单粒子势模型的框架下, 计算了O同位素和F同位素的基态和某些低激发态的能级值、均方根半径值及密度分布。通过在伍兹 萨克逊势中引入同位旋依赖项, 研究了同位旋效应对F同位素s-d能级间隙的影响。理论计算得到的均方根半径值和自旋宇称值与实验结果一致。尤其是, 理论计算能够实现16F, 15F和14F中2s_1/2与1d_5/2质子能级间的反转, 且F同位素中s-d质子能级间隙及其整体变化趋势与已知实验结果符合较好。此外, 理论结果表明17F的(1/2)+第一激发态为单质子晕态。 The level structures of O and F isotopes are investigated in the framework of the single particle potential model. The isospin effect on the s d level spacing in F isotopes is studied by introducing an isospin dependent term in the depth of the Woods Saxon potential. The theoretical results of RMS radii and spin parity values are in agreement with the experimental data. In particular, the level inversion between proton levels of 2s_1/2 and 1d_5/2 in 16F, 15F and 14F is reproduced. The global tendency of the s-d level spacing agrees with the observed fact. In addition, the study confirms the one proton halo structure in 17F(2s_1/2).     

Eu掺杂SiC_xO_y薄膜的Eu~(3+)发光机制

利用磁控溅射技术在低温250℃下制备Eu掺杂SiC_xO_y薄膜,研究薄膜的Eu~(3+) 发光激发机制。实验结果表明,薄膜的发光谱由来自基体材料的蓝光和来自Eu~(3+) 的红光组成;随着薄膜中Eu含量由0.19%增加到2.27%,其红光强度增加3倍左右,而蓝光逐渐减弱。Raman光谱及荧光瞬态谱分析表明,其蓝光由中立氧空位缺陷发光中心引起。结合薄膜的Eu~(3+) 激发光谱分析,SiC_xO_y∶Eu薄膜的红光增强源于薄膜中Eu~(3+) 离子浓度的增加和/或基体材料的中立氧空位缺陷发光中心与Eu~(3+) 离子的能量转移。     

Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃

Amorphous-layer-free nanocrystalline silicon films were prepared by a very high frequency plasma enhanced chemical vapor deposition(PECVD) technique using hydrogen-diluted SiH4 at 250 C.The dependence of the crystallinity of the film on the hydrogen dilution ratio and the film thickness was investigated.Raman spectra show that the thickness of the initial amorphous incubation layer on silicon oxide gradually decreases with increasing hydrogen dilution ratio.High-resolution transmission electron microscopy reveals that the initial amorphous incubation layer can be completely eliminated at a hydrogen dilution ratio of 98%,which is lower than that needed for the growth of amorphous-layer-free nanocrystalline silicon using an excitation frequency of 13.56 MHz.More studies on the microstructure evolution of the initial amorphous incubation layer with hydrogen dilution ratios were performed using Fourier-transform infrared spectroscopy.It is suggested that the high hydrogen dilution,as well as the higher plasma excitation frequency,plays an important role in the formation of amorphous-layer-free nanocrystalline silicon films.     

Exploring Scaling Laws of Valence Neutron Distributions for Medium Nuclei

The root-mean-square radii of the valence neutron distributions for many nuclei in He-Mo mass range are calculated in the framework of the single-particle potential model. The scaling laws of valence neutron distributions are obtained by analyzing the relations between the radii and the binding energies of the valence neutrons. Based on these scaling laws, the necessary conditions for the occurrence of neuron halos in 2s1/2, 1p3/2, 1p1/2, 2p3/2, 2p1/2, 1d5/2 and 1d3/2 states are deduced, respectively. The derived quantitative conditions for halo occurrence can provide reference for the searching of neutron halos up to medium nuclei.