电机驱动微装配在双光子制备微结构中的应用

对微结构的制作、微装配系统进行了研究. 采用飞秒激光双光子聚合微加工技术制作有底座、精细的三维立体“拱形”微结构, 其高250μm、长300μm、厚50μm. 将此微结构与实验室自主搭建的二维微装配平台相结合, 利用自主编程的人机交互界面驱动步进电机, 远程操控微装配设备; 将荧光闪烁陶瓷粉末装配到微结构中, 对装配后的微结构进行荧光光谱表征发现, 纯荧光粉末和微结构中的荧光粉末的发射光谱在测量误差范围内基本一致, 表明荧光粉末的光学性质未发生改变. 利用该装置可以将各类微纳米级材料和微结构进行装配, 形成含有不同材料的微结构系统.     

基于耦合声场建模的膨胀腔消声器声学性能分析及试验

针对圆柱形膨胀腔消声器三维建模及声学性能分析问题, 提出一种基于切比雪夫变分原理的耦合声场建模方法, 建立三维圆柱形膨胀腔消声器理论模型并搭建试验台架, 传递损失试验结果验证了理论模型的准确性. 将膨胀腔消声器内部声场分解为多个子声场, 基于子声场间压力与质点振速连续性条件, 推导声场耦合变分公式, 构建子声场拉格朗日泛函. 将子声场声压函数展开为切比雪夫-傅里叶级数形式, 通过瑞利-里兹法求解膨胀腔消声器频率、声压响应及传递损失. 计算并对比分析扩张比、扩张腔长度、进出口管偏置对膨胀腔消声器消声性能的影响. 结果表明: 扩张比增大会有效提高消声器在低频段的消声性能, 进出口管的偏置对消声器消声性能影响很小.     

Superconductivity and unconventional density waves in vanadium-based kagome materials AV3Sb5

Recently, the discovery of vanadium-based kagome metal AV₃Sb₅ (A= K, Rb, Cs) has attracted great interest in the field of superconductivity due to the coexistence of superconductivity, non-trivial surface state and multiple density waves. In this topical review, we present recent works of superconductivity and unconventional density waves in vanadium-based kagome materials AV₃Sb₅. We start with the unconventional charge density waves, which are thought to correlate to the time-reversal symmetry-breaking orders and the unconventional anomalous Hall effects in AV₃Sb₅. Then we discuss the superconductivity and the topological band structure. Next, we review the competition between the superconductivity and charge density waves under different conditions of pressure, chemical doping, thickness, and strains. Finally, the experimental evidence of pseudogap pair density wave is discussed.     

计算代数方程组孤立奇异解的符号数值方法

求解代数方程组是计算代数几何的最基本问题之一,孤立奇异解的计算则是其中最具挑战性的课题之一,在科学与工程计算中有着广泛的应用,如机器人、计算机视觉、机器学习、人工智能、运筹学、密码学和控制论等.本文结合作者的研究成果,综述了符号数值方法在计算代数系统孤立奇异解、特别是近似奇异解精化与验证方面的研究进展,并对未来的研究方向提出了展望.     

利用改进的Gamow-like模型研究原子核的α衰变和质子放射性

通过引入离心势和静电屏蔽效应对Gamow-like模型进行了改进，并将其用于α衰变和质子放射性研究，发现改进的Gamow-like模型能更好地符合实验数据。另外，还利用改进的Gamow-like模型预言了16个丰质子核的质子放射性的半衰期以及7个$Z=120$超重核素($^{296-308}120$)α衰变链上原子核的α衰变的半衰期，为将来在大科学装置上合成和鉴别这些新核素提供重要的理论参考。     

Modeling and character analyzing of multiple fractional-order memcapacitors in parallel connection

Recently,the memory elements-based circuits have been addressed frequently in the nonlinear circuit theory due to their unique behaviors.Thus,the modeling and characterizing of the mem-elements become essential.In this paper,the analysis of the multiple fractional-order voltage-controlled memcapacitors model in parallel connection is studied.Firstly,two fractional-order memcapacitors are connected in parallel,the equivalent model is derived,and the characteristic of the equivalent memcapacitor is analyzed in positive or negative connection.Then a new understanding manner according to different rate factor K and fractional orderαis derived to explain the equivalent modeling structure conveniently.Additionally,the negative order appears,which is a consequence of the combination of memcapacitors in different directions.Meanwhile,the equivalent parallel memcapacitance has been drawn to determine that multiple fractional-order memcapacitors could be calculated as one composite memcapacitor.Thus,an arbitrary fractional-order equivalent memcapacitor could be constructed by multiple fractional-order memcapacitors.     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

紫外荧光光谱法测定焦炉气中的痕量总硫

采用紫外荧光光谱法测定焦炉气制取液化天然气的原料气中痕量总硫,考察了样品引入速率、进样量、气体流量、燃烧温度、取样方式和进样方式等条件对分析结果的影响。总硫检出限为15μL·m-3,测定结果与气相色谱法和微库仑法的结果相吻合,测定值的相对标准偏差(n=7)小于10%。