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Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability 下载免费PDF全文
We investigate negative bias temperature instability (NBTI) on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs) with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5 × 1012 cm^-2. NBTI characterization is performed to investigate the linear transconductance (GM,lin) degradation and threshold voltage shift (△VTH) under NBT stress. Ge pMOSFETs with a lOyr lifetime at an operating voltage of -0.72 V are demonstrated. The impact of the Si2H6 passivation temperature is studied. As the passivation temperature increases from 350℃ to 550℃, the degradation of NBTI characteristics, e.g., GM,lin loss, △VTH and an operating voltage for a lifetime of lOyr, is observed. 相似文献
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建立了气相色谱直接测定工业油酸中未衍生化的6种常见脂肪酸含量的检测方法。样品用四氢呋喃(THF)溶解,通过氢火焰离子化检测器(FID)对目标化合物进行分析,外标法定量。在优化的气相色谱条件下,6种脂肪酸实现了有效分离,6种脂肪酸在5~5000 mg/L范围内定量曲线的相关系数(R2)均大于0.99991,表明线性关系良好,方法检出限(S/N≥3)为0.36~0.58 mg/L,相对标准偏差为3.4%~8.1%,加标回收率在84.7%~110.2%之间。选取4种工业油酸样品进行分析,实验结果表明,样品未经衍生化处理直接进样,本方法在10 min内能够对6种脂肪酸实现基线分离,为工业油酸的品质鉴定提供了一种快速有效的检测方法。 相似文献
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