Two-dimensional photon counting imaging detector based on a Vernier position sensitive anode readout

A two-dimensional photon counting imaging detector based on a Vernier position sensitive anode is reported. The decode principle and design of a two-dimensional Vernier anode are introduced in detail. A photon counting imaging system was built based on a Vernier anode. The image of very weak optical radiation can be reconstructed by image processing in a period of integration time. The resolution is superior to 100 μm according to the resolution test. The detector may realize the imaging of very weak particle flow of high-energy photons, electrons and ions, so it can be used for high-energy physics, deep space exploration, spectral measurement and bio-luminescence detection.     

CdZnTe晶体的缺陷能级分析

通过测试富Cd原料无籽晶垂直布里奇曼法生长出的高阻Cd0.8Zn0.2Te (CZT)单晶体的I-T特性曲线,利用热激活能原理来分析单晶体内的缺陷,结果得到晶体中有一个由镉空位引起的电子陷阱,其深度为0.539eV.由于俘获能级有较高的激活能,在常温下,价带上的载流子不会被激发,所以该晶体适用于制作室温核辐射探测器.另外还研究了CZT晶体在室温下的I-V特性,测得采用该方法生长的CZT单晶体电阻率高达5.0×1010Ω*cm,制作的核辐射探测器在室温下获得了比较好的241Am 59.5keV能谱.     

一种多狭缝条纹变相管

设计了一种动态范围大、小型化条纹变相管,其时间分辨能力在2.6 ps左右,变相管的长度为196.532 mm,可以工作在单狭缝和多狭缝模式下,使得这种条纹变相管不但可以应用在激光核聚变、等粒子物理、激光技术、光生物、光化学等传统的超快诊断领域内,而且可以应用于海底探测以及空中预警等领域,可获得高速运动目标的三维空间+一维强度信息的探测.     

Imaging properties of a tetra wedge readout

The decoding principle of a tetra wedge anode, which is a development of the wedge and strip anode, is described. The influence of charge cloud size on decoding accuracy is studied using the Monte Carlo method. Simulation results show that the decoding error is large when the size of charge clouds collected by the anode is small. Thus, the charge clouds collected by the tetra wedge anode should reach a necessary size to ensure accurate decoding. Finally, using the ultraviolet photon counting imaging system, the linearity and the spatial resolution of the system are tested. Experimental results show that the system has a good linearity and the spatial resolution is better than 100 μm.     

Influence of annealing temperature on the performance of Ge film and photon-counting imaging system

<正>Compared with the traditional image intensifier with phosphor screen readout,the photon-counting imaging detector with charge induction readout is more beneficial in several aspects(e.g.,good imaging properties and time resolution) to astronomy,reconnaissance,bioluminescence,and materials research.However, the annealing temperature during the tube-making process can affect the properties of the Ge film,and consequently impair the performance of the detector.Therefore,the influence of annealing temperature on Ge film and on the detector is studied in order to determine the crucial parameters.The Ge films are prepared on ceramic and quartz glass by the use of an electron gun.They are analyzed by scanning electron microscope(SEM),high-resistance meter,and X-ray diffraction(XRD).The results show that the optimum substrate and annealing temperature are ceramic plate and 250℃,respectively.     

装架准确度对条纹管性能参量影响的研究

通过理论计算研究装架精度对条纹管性能的影响.计算条纹管偏差装架时的电子轨迹;计算条纹管偏差装架时的空间调制函数以及阴极面处圆图案在最佳相面处的图像,从而研究条纹管装架过程中各电极的偏差安装对条纹管空间分辨率、图像畸变程度的影响.结果表明.各电极的同轴度以及电极筒本身的加工精度是影响条纹管性能指标尤其是空间分辨率的主要因素.     

碲锌镉单晶体的(110)面蚀坑形貌观察

本文报道了一种能够在室温下择优腐蚀碲锌镉(CZT)单晶体(110)晶面的腐蚀液配方,并对富Cd生长的CZT晶体蚀坑形貌进行了扫描电镜观察.结果表明晶体(110)面腐蚀坑形状为三角形,并初步对蚀坑的成因进行了分析,估算出CZT(110)面蚀坑密度约为103～105/cm2数量级.这说明富Cd原料的改进布里奇曼法可以生长出低蚀坑密度的CZT单晶体.     

高分辨紫外电子轰击互补金属氧化物半导体器件的实验研究

基于真空紫外光电阴极和背照式互补金属氧化物半导体(CMOS)图像传感器研制了紫外光响应的电子轰击CMOS(EBCMOS)器件,实现了EBCMOS器件在40 mlx光照度环境下的高分辨探测,电子图像灰度随电子能量的变化呈现出极好的线性关系.对器件成像分辨率测试的结果表明,在电场强度为5000 V/mm时,器件的空间分辨率可以达到25 lp/mm,与国际相关报道水平相当.研制的EBCMOS器件可直接在紫外弱光探测领域应用,如天文观察、高能物理、遥感测绘等,同时也可为下一步研制可见光和近红外敏感的EBCMOS器件提供参考.     

一种响应波长在120 nm～200 nm的紫外像增强器

介绍了一种响应波长在120 nm～200 nm的紫外像增强器。它是采用CsI直接蒸镀在MCP上形成反射式光电阴极,用MgF₂作为输入窗口,光纤面板作为输出窗的真空光电器件。管型采用近贴聚焦结构,从而使得弥散和像差得以减小,具有高的量子效率和空间分辨率。在静态测试中,空间分辨率可以达到18 lp/mm。该紫外像增强器可用于空间科学和天文观测领域。     

Ge薄膜特性及其在光子计数成像系统中的应用

利用电子束真空蒸镀方法制作了Ge薄膜,用作感应读出方式光子计数成像系统的电荷感应层,研究了石英玻璃衬底和陶瓷衬底上Ge薄膜的结构特征、表面形态以及各种工艺参数对薄膜电阻的影响.X射线衍射(XRD)测试表明,两种衬底上沉积的Ge薄膜均为立方相非晶态.场发射扫描电子显微镜(FESEM)图像表明石英玻璃衬底上的薄膜致密平整,陶瓷衬底上的薄膜比较粗糙,厚度较薄时,陶瓷晶界处薄膜不连续导致电阻较大.通过改变沉积速率、薄膜厚度及采用退火的方法可以控制薄膜电阻.对比了采用不同阻值电荷感应层时系统的性能,发现阻值对探测器的分辨率影响小,对计数率影响较大.