GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and characterized by Raman scattering |
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| Authors: | Zhong Fei Li Xin-Hu Qiu Kai Yin Zhi-Jun Ji Chang-Jian Cao Xian-Cun Han Qi-Feng Chen Jia-Rong and Wang Yu-Qi |
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| Affiliation: | Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
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| Abstract: | GaN layers with different polarities have been prepared by radio-frequency
molecular beam epitaxy (RF-MBE) and characterized by Raman
scattering. Polarity control are realized by controlling
Al/N flux ratio during high temperature AlN buffer growth. The Raman results
illustrate that the N-polarity GaN films have frequency shifts at $A_{1}$(LO)
mode because of their high carrier density; the forbidden $A_{1}$(TO) mode
occurs for mixed-polarity GaN films due to the destroyed translation
symmetry by inversion domain boundaries (IDBS); Raman spectra for
Ga-polarity GaN films show that they have neither frequency shifts mode nor forbidden
mode. These results indicate that Ga-polarity GaN films have a better
quality, and they are in good agreement with the results obtained from the
room temperature Hall mobility. The
best values of Ga-polarity GaN films are 1042 cm$^{2}$/Vs with a carrier
density of 1.0$\times $10$^{17}$~cm$^{ - 3}$. |
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| Keywords: | polarity gallium nitride Raman scattering |
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