基于Ⅱ类超晶格的中波红外带间级联探测器（特邀）

为了提高红外探测器的工作温度,基于InAs/GaSb II类超晶格材料设计了一种五级带间级联结构中波红外光电探测器,并采用分子束外延技术和标准化光刻及刻蚀技术进行了器件的制备。在77 K时,该器件的50%截止波长是4.02μm,在0 V时峰值探测率为1.26×1012 cm·Hz1/2/W;在300 K零偏压下,该器件的50%截止波长是4.88μm,峰值探测率为1.28×109 cm·Hz1/2/W,实现了高温探测。从180 K到300 K,器件的暗电流主要由扩散电流主导。在77 K到220 K温度范围的暗电流曲线中观察到了负微分电阻现象,并解释了峰谷电流比相对于温度变化的趋势。研究结果表明,具有带间级联结构的T2SL探测器可以进行室温工作,在中波范围内有比较明显的优势。     

基于配体结构的Grb2-SH2抑制剂的结构优化:更高的活性、更少的电荷、更低的肽性

生长因子受体结合蛋白2(Grb2)在致癌基因Ras活化的信号传导通路中起着关键作用,目前被广泛认为是抗肿瘤药物设计的优秀靶标.对Grb2-SH2抑制剂的研究进展进行了综述,主要针对关键残基磷酸酪氨酸的高电荷性和多肽结构的低生物相容性两个缺陷,基于天然配体与Grb2-SH2相互作用的结构特征,围绕提高活性和简化结构开展的系统构效关系和合理结构优化研究,为进一步开发磷酸酪氨酸介导的Grb2-SH2抑制剂成为新型抗肿瘤药物提供结构和理论基础.     

Crystal Structures and Characterizations of Bis(pyrrolidinedithiocarbamato) Cu(II) and Zn(II) Complexes

ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｅａｂｉｌｉｔｙｏｆｄｉｔｈｉｏｃａｒｂａｍａｔｅ(ｄｔｃ)ｂｉｎｄｉｎｇｔｏｍｅｔａｌｓｈａｓｂｅｅｎｋｎｏｗｎｆｏｒｍａｎｙｙｅａｒｓ .Ｉｔｆｏｒｍｓｃｈｅｌａｔｅｓｗｉｔｈｖｉｒｔｕ ａｌｌｙａｌｌｔｒａｎｓｉｔｉｏｎｍｅｔａｌｓ.1Ｔｈｅｂｉｄｅｎｔａｔｅａｎｉｏｎｉｓａｌｓｏｗｅｌｌｋｎｏｗｎａｓａｂｒｉｄｇｅｂｅｔｗｅｅｎｔｗｏｔｒａｎｓｉｔｉｏｎｍｅｔａｌｃｅｎｔｅｒｓ.2 Ｗａ ｔｅｒ ｓｏｌｕｂｌｅｄｉａｌｋｙｌｄｉｔｈｉｏｃａｒｂａｍａｔｅｃｏｍｐｌｅｘｅｓ…     

库仑滴定法间接测定补锌片中锌

以pH 9.2的1.0mol·L~(-1)碘化钾-四硼酸钠溶液为支持电解质溶液,铂电极作为电解电极与指示电极,于室温下电解生成碘10s后加入补锌片样品溶液滴定剩余的半胱氨酸,采用库仑滴定法指示滴定终点,根据法拉第电解定律,间接测定样品溶液中锌含量。锌的质量浓度在0.05～0.50g·L~(-1)内与其消耗的电量呈线性关系,检出限(3s)为0.04mg·L~(-1)。方法用于补锌片样品的分析,测定值的相对标准偏差(n=6)为0.76%～0.92%,测定值与标示量不存在显著性差异。     

Growth of TlBa_2Ca_2Cu_3O_9 Epitaxial Thin Films by Two-Step Method in Argon

TlBa_2 Ca_2 Cu_3 O_9(Tl-1223) films have promising applications due to their high critical temperature and strong magnetic flux pinning. Nevertheless, the preparation of pure phase Tl-1223 film is still a challenge. We successfully fabricate Tl-1223 thin films on LaAlO_3(001) substrates using dc magnetic sputtering and a post annealing two-step method in argon atmosphere. The crystallization temperature of Tl-1223 films in argon is reduced by 100℃ compared to that in oxygen. This greatly reduces the volatilization of Tl and improves the surface morphology of films. The lower annealing temperature can effectively improve the repeatability of the Tl-1223 film preparation. In addition, pure Tl-1223 phase can be obtained in a broad temperature zone,from 790℃ to 830℃. In our study, the films show homogenous and dense surface morphology using the presented method. The best critical temperature of Tl-1223 films is characterized to be 110 K, and the critical current J_c(77 K, 0 T) is up to 2.13 × 106 A/cm~2.