基于微米颗粒填充的粉末低通滤波器仿真

粉末滤波器是一种可应用于超导量子计算等低温实验系统的低通滤波器, 随着频率的升高滤波器会对信号产生急剧的有效衰减, 粉末滤波器的填充材料、 中心导线长度、 线径和结构等参数会对它的频率响应特性产生影响. 本文利用 CST 微波工作室基于微米颗粒填充的方式, 首次对不同中心导线结构的粉末滤波器性能进行三维仿真研究, 仿真结果与实测结果对比后的定性一致性, 说明仿真方法的可行性和准确性. 仿真方法的提出可以有效地加快滤波器结构的迭代速度, 从而降低研发周期和成本, 方便可应用于超导量子计算的新一代粉末滤波器的开发.     

Growth of TlBa_2Ca_2Cu_3O_9 Epitaxial Thin Films by Two-Step Method in Argon

TlBa_2 Ca_2 Cu_3 O_9(Tl-1223) films have promising applications due to their high critical temperature and strong magnetic flux pinning. Nevertheless, the preparation of pure phase Tl-1223 film is still a challenge. We successfully fabricate Tl-1223 thin films on LaAlO_3(001) substrates using dc magnetic sputtering and a post annealing two-step method in argon atmosphere. The crystallization temperature of Tl-1223 films in argon is reduced by 100℃ compared to that in oxygen. This greatly reduces the volatilization of Tl and improves the surface morphology of films. The lower annealing temperature can effectively improve the repeatability of the Tl-1223 film preparation. In addition, pure Tl-1223 phase can be obtained in a broad temperature zone,from 790℃ to 830℃. In our study, the films show homogenous and dense surface morphology using the presented method. The best critical temperature of Tl-1223 films is characterized to be 110 K, and the critical current J_c(77 K, 0 T) is up to 2.13 × 106 A/cm~2.