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压电效应是一种实现电能与机械能之间相互转换的重要物理现象。随着集成光电子技术和压电薄膜材料制备技术的日益成熟,压电效应在光电子集成芯片领域引起广泛的研究。在压电效应的作用下,外部电场可以操控薄膜材料的形变,从而改变折射率,实现光电调谐和声光调制。本文首先介绍常见压电薄膜材料及其研究进展,随后回顾和探讨基于压电效应的光电子集成器件的研究进展。最后,对压电调谐器件和声光调制器的应用进行介绍和展望,分析其大规模应用面临的挑战和问题。  相似文献   
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Thin-film filters (TFFs) have been widely employed in optical communication systems for their many attractive features, such as very low temperature dependence thus allowing operation without temperature controllers, flat- top passband to minimize the signal distortion, and rel- atively low insertion loss as well as little polarization dependency[1]. Also, modules based on TFFs can be designed to be upgradeable. The performance of cas- caded TFFs in optical add/drop multiplexer (OADM) rin…  相似文献   
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We propose a new scheme to generate broadband linearized optical single-sideband (OSSB) signal for radio over fiber systems. By using an unbalanced dual parallel Mach-zehnder modulator (DPMZM) followed by optical filtering, a linearized OSSB signal is obtained. With coherent detection, radio frequency (RF) signal can be recovered with simultaneously suppressed second-order distortion and third-order intermodulation. This scheme can be used to realize broadband systems with wide dynamic range.  相似文献   
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We propose a 40-Gb/s star 16-ary quadrature amplitude modulation (16-QAM) transmitter using a single dual-drive Mach-Zehnder modulator (DDMZM). This transmitter is demonstrated through experiment and simulation and shows the advantage of simplicity for implementation. Simulation results indicate that error free performance could be achieved for the generated signal after 80-km standard single-mode fiber (SSMF) transmission with coherent detection scheme.  相似文献   
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何正红  叶志成  李争光  崔晴宇  苏翼凯 《物理学报》2011,60(3):34213-034213
本文研究了掺入各向同性周期性介质层缺陷的一维复合周期胆甾型液晶光子晶体的禁带特性.发现同一般的胆甾型液晶不同,复合介质-液晶周期结构对左旋偏振入射光和右旋入射光都会出现共同禁带.当各向同性介质层占一个周期的厚度比例越小,左旋偏振光的禁带效应逐渐消失,而右旋偏振光的禁带则逐渐合并变大;且各向同性介质的折射率越大,则两种偏振光的禁带效应越明显,更容易出现共同禁带;通过调整厚度比,可以在可见光范围内出现对应红、绿、蓝色波长的禁带,从而可以用于液晶显示的反射式彩色滤光片. 关键词: 胆甾型液晶 光子晶体 禁带 缺陷  相似文献   
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We experimentally demonstrate 10-Gb/s format conversion from non-return-to-zero (NRZ) to alternatemark-inversion (AMI) using the linear filtering effect of silicon microring resonator. Our discussion and analysis in simulation further show that a 10-Gb/s AMI signal with good quality can be obtained by a resonator with a notch depth larger than 25 dB when the 3-dB bandwidth is 0.4 nm.  相似文献   
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