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采用60Co γ射线源对高铝组分Al0.5Ga0.5N盲紫外p-i-n结构光探测器和Si基可见光p-i-n结构探测器进行了累计剂量分别为0.1, 1, 10 Mrad(Si)总剂量辐照实验. 实验发现, 随着辐照剂量的增加, AlGaN盲紫外p-i-n结构光探测器的理想因子显著增大, 辐照后理想因子n > 2; 而Si基可见光p-i-n 结构探测器的理想因子随辐照剂量的变化并不明显. AlGaN盲紫外p-i-n结构光探测器理想因子的退化可能主要是因为欧姆接触性能的退化, Si基可见光p-i-n结构探测器的理想因子的变化则可能是由于敏感层的退化.
关键词:
xGa1?xN')" href="#">高铝组分AlxGa1?xN
γ射线辐射效应
理想因子
欧姆接触 相似文献
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We have developed a superior solar-blind ultraviolet (UV) photocathode with an AlxGa1-xN photocathode (x ~ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1-xN: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects. 相似文献
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