InGaAs(P)/InP量子阱混合处理对其光电特性的影响

用离子注入诱导无序（IICD）和无杂质空位扩散诱导无序（IFVD）方法研究了InGaAs(P)/InP量子阱结构的混合造成材料光电特性变化，带隙蓝移的规律。研究结果发现，IICD造成的带隙蓝移与离子注入的种类、剂量、注入后退火温度，时间有关，也和样品存在的应力有关。具有压应力的样品产生的蓝移量比具有应力的大。IFVD方法造成的带隙蓝移量与介质膜的种类，后继退火温度，退火时间有关。同时还发现，蓝移量与半导体盖层成分和介质层成分的组合有关，InGaAs与SiO2组合产生的蓝移比InP与SiO2组合的大。介质层的掺杂也影响蓝移量，掺P的SiOxPyNx可以产生高达224meV的蓝移，目前尚未见其他报道，二次离子质谱（SIMS）研究说明，量子阱层元素的互扩散可能是造成带隙蓝移的主要原因。     

无杂质空位扩散法造成InGaAsP/InP多量子阱结构带隙蓝移规律的研究

采用光荧光谱(PL)和光调制反射谱(PR)的方法,研究了由Si₃N₄、SiO₂电介质盖层引起的无杂质空位(IFVD)诱导的InGaAsP四元化合物半导体多量子阱(MQWs)结构的带隙蓝移。实验中Si₃N₄、SiO₂作为电介质盖层,用来产生空位,再经过快速热退火处理(RTA)。实验结果表明:多量子阱结构带隙蓝移和退火温度、复合盖层的组合有关。带隙蓝移随退火温度的升高而加大。InP、Si₃N₄复合盖层产生的带隙蓝移量大于InP、SiO₂复合盖层。而InGaAs、SiO₂复合盖层产生的带隙蓝移量则大于InGaAs、Si₃N₄复合盖层。同时,光调制反射谱的测试结果与光荧光测试的结果基本一致,因此,PR谱是用于测试带隙变化的另一种方法。     

Implant Depth Influence on InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation

We investigate quantum well intermixing of a double-quantum-well structure caused by phosphorus ion implantation by means of photoluminescence （PL）. The ion implantation is performed at the energy of 120keV with the dose ranging from 1 × 10^11 to 1 × 10^14/cm^2. The rapid thermal annealing is performed at the temperature of 700℃ for 30s under pure nitrogen protection. The PL measurement shows that the band gap blueshift is influenced by the depth of ion implantation. The blueshift of the upper well which is closer to the implanted wcancies is enhanced with the ion dose faster than that from a lower well under the lower dose implantation （〈 5 × 10^11/cm^2）. When the ion dose is over 10^12/cm^2, the band gap blueshift from both the wells increases with the ion dose and finally the two peaks combine together as one peak, indicating that the ion implantation results in a total intermixing of both the quantum wells.