Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.     

Dielectric and Ferroelectric Properties of La-Doped SrBi2Nb2O9 Ceramics

Sr1-xLa2x/3Bi2Nb20O （0 ≤ x ≤0.2） ceramic samples are prepared by the solid-state reaction method. Their structure, dielectric and ferroelectric properties are investigated. The incorporation of La^3＋ improves the den- sification and decreases the grain size of the ceramics without changing the crystal structure. The remanent polarization 2PT increases with increasing La content and reaches a maximum value of 22.8μC/cm^2 at x = 0.125, which is approximately 60% larger than that of pure SrBi2Nb2O9. The Curie temperature keeps almost unchanged at a value of about 440℃. The relationship between doping and the ferroeleetrie and dielectric properties are discussed.