波段外激光辐照光导型InSb探测器的一种新现象

利用不同功率密度的10.6 μm(光子能量为0.12 eV)连续激光辐照了禁带宽度为0.228 eV的光导型锑化铟探测器, 得到了与以往报道不同的实验现象. 当10.6 μm波段外激光辐照光导型探测器时, 探测器吸收激光能量后温度升高. 在探测器的温升过程中, 存在一个转变温度T₀. 当探测器的温度T<T₀时, 载流子浓度基本不变, 迁移率随温度的升高呈T^-2.35趋势下降, 引起探测器的电导率减小, 电阻增大, 响应输出电压升高; 当T>T₀时, 热激发载流子浓度随温度的升高呈指数增长, 电阻急剧下降, 超过了载流子迁移率降低对电阻的影响, 响应输出急剧下降. 光电导探测器在较高功率密度波段外激光辐照下的响应特性是载流子的浓度和迁移率在温度影响下相互作用的结果. 这对进一步完善半导体内载流子输运模型提供了实验依据.     

Electron–phonon coupling in topological insulator Bi_2Se_3 thin films with different substrates

Broadband transient reflectivity traces were measured for Bi_2 Se_3 thin films with various substrates via a 400 nm pump–white-light-probe setup. We have verified the existence of a second Dirac surface state in Bi_2 Se_3 and qualitatively located it by properly analyzing the traces acquired at different probe wavelengths. Referring to the band structure of Bi_2 Se_3, the relaxation mechanisms for photo-excited electrons with different energies are also revealed and studied. Our results show a second rise of the transient reflection signal at the time scale of several picoseconds. The types of substrate can also significantly affect the dynamics of the rising signal. This phenomenon is attributed to the effect of lattice heating and coherent phonon processes. The mechanism study in this work will benefit the fabrication of high-performance photonic devices based on topological insulators.     

光伏型碲镉汞探测器在波段内连续激光辐照下的两种不同过饱和现象的产生机理

利用连续波段内激光对两批光伏型碲镉汞探测器进行了激光辐照实验, 发现了两种不同的过饱和现象. 实验表明, 光伏型碲镉汞探测器在强光辐照下都会出现开路电压随光强增强而减小的过饱和现象, 明晰了PV型探测器在强光辐照下的一般规律性现象和由探测器个体差异导致的特殊现象. 从等效电路模型出发, 剖析了两种过饱和现象的发生条件, 建立了数值计算的理论模型, 对两种过饱和现象进行了数值模拟, 计算结果与实验结果符合得较好. 研究表明, 光伏型碲镉汞探测器在波段内强光辐照下引起的过饱和现象有两种产生机理, 一种是热效应引起的暗电流增大机理; 另一种是探测器材料中缺陷引起的漏电流增大机理. 关键词： 波段内连续激光 光伏型碲镉汞探测器 过饱和现象     

Experimental Evidence of Topological Surface States in Mg_3Bi_2 Films Grown by Molecular Beam Epitaxy

Nodal line semimetal(NLS) is a new quantum state hosting one-dimensional closed loops formed by the crossing of two bands. The so-called type-Ⅱ NLS means that these two crossing bands have the same sign in their slopes along the radial direction of the loop, which requires that the crossing bands are either right-tilted or left-tilted at the same time. According to the theoretical prediction, Mg_3Bi_2 is an ideal candidate for studying the type-Ⅱ NLS by tuning its spin-orbit coupling(SOC). High-quality Mg3 Bi2 films are grown by molecular beam epitaxy(MBE). By in-situ angle resolved photoemission spectroscopy(ARPES), a pair of surface resonance bands around the■ point are clearly seen. This shows that Mg_3Bi_2 films grown by MBE are Mg(1)-terminated by comparing the ARPES spectra with the first principles calculations results. Moreover, the temperature dependent weak anti-localization effect in Mg_3Bi_2 films is observed under magneto-transport measurements, which shows clear two-dimensional(2 D) e-e scattering characteristics by fitting with the Hikami–Larkin–Nagaoka model. Therefore, by combining with ARPES, magneto-transport measurements and the first principles calculations, this work proves that Mg_3Bi_2 is a semimetal with topological surface states. This paves the way for Mg_3Bi_2 to be used as an ideal material platform to study the exotic features of type-Ⅱ nodal line semimetals and the topological phase transition by tuning its SOC.     

电容器通过变压器对脉冲形成线充电过程

从T模型等效电路出发,在等效电路中磁化电感两端的电压在形成线等效电容充电到第一个峰值之前变化较小这一假设之下,推导了电容器通过变压器对脉冲形成线充电的解析表达式,给出了考虑回路存在电阻和杂散电感下的表达式。最后利用电路模拟来验证解析表达式,结果表明:给出的解析表达式能够较好地分析电容器通过变压器对脉冲形成线充电过程;在形成线充电的第一个半周期内,解析理论得到的结果与模拟结果比较吻合,在原边电容和形成线等效电容可比较的情况下,从变压器耦合系数较低（不超过0.7）到耦合系数接近于1的情况都适用。     

Soliton mode-locked fiber laser with high-quality MBE-grown Bi_2Se_3 film

In this work, a soliton mode-locked erbium-doped fiber laser(EDFL) with a high-quality molecular beam epitaxy(MBE)-grown topological insulator(TI) Bi_2Se_3 saturable absorber(SA) is reported. To fabricate the SA device, a 16-layer Bi_2Se_3 film was grown successfully on a 100 μm thick SiO_2 substrate and sandwiched directly between two fiber ferrules. The TI-SA had a saturable absorption of 1.12% and a saturable influence of 160 MW/cm~2.After inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 MHz. The output central wavelength, pulse energy,pulse duration, and signal to noise ratio of the radio frequency spectrum were 1530 nm,18.5 p J, 1.08 ps, and 60d Bm, respectively. These results demonstrate that the MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critically important for ultra-fast pulse generation.     

铅(Ⅱ)-钇组稀土(Ⅲ)-BPR-乙酸根-TPB-乙醇体系共显色效应的研究

本文报道了铅(Ⅱ)与钇组稀土在Pb(Ⅱ)-RE(Ⅲ)-BPR-Ac~--TPB-EtOH体系中的共显色效应。探索了共显色效应的最佳条件及共显色体系的杂多核配合物的性质。此体系可用于测定铅及钇组稀土,灵敏度高,在0—30μg钇组稀土/25ml或0—60μg铅/25ml的范围内服从比尔定律。测定了杂多核配合物组成并讨论了它的形成机理。研究了外来离子的干扰情况及其分析应用。     

CCD强光串扰效应的串扰线缺口现象及其机制

在激光辐照行间转移CCD相机的实验中发现了关于CCD串扰效应的一个新现象,即在串扰线上出现缺口,该缺口紧邻主光斑上侧且随光强增大而减小。基于行间转移面阵CCD的构造和工作过程,利用CCD串扰效应的一种新机制对现象作出了合理的解释。串扰线的形成依赖于在垂直转移动作过程中CCD信号积分势阱中的载流子向垂直转移CCD寄存器中的溢出。串扰线上缺口的出现则是由于CCD的信号积分势阱被读出转移动作清空后再次填满需要经过一定时间,该时间内无信号电荷溢出至转移沟道;读出转移清空存储势阱的时刻是构成主光斑的主体信号电荷按正常时序进入垂直转移CCD寄存器的时刻,故缺口紧邻主光斑的上侧;光强越大,光电子再次填满存储势阱乃至溢出形成串扰线所需要的时间越短,则缺口越小。     

锌原卟啉Ⅸ二甲酯及其轴向配合物的富里叶变换拉曼光谱和与其共…

本工作测定了锌原卟啉Ⅸ二甲酯及其２－，３－胺基吡淀，２－，３－甲基吡啶，咪唑和苯并咪唑的富里叶变换（ＦＴ）拉曼光谱，并将之与其共振拉曼光谱比较。轴向配体引起的卟啉环“心膨胀”效率是卟啉骨架模式的拉曼频率下降和电子吸收带红移的原因，吡啶取代基的位置及推电子性质等影响拉慢频率位移及电子吸收带红移的程度。