Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

The structural and optical properties of InGaN/GaN multiple quantum wells(MQWs) with different barrier thicknesses are studied by means of high resolution X-ray diffraction(HRXRD), a cross-sectional transmission electron microscope(TEM), and temperature-dependent photoluminescence(PL) measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodicity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization potentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence,and the corresponding activation energy(or the localization potential) increases with the increase of the barrier thickness.The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers,i.e., clusters with lower In contents aggregate into clusters with higher In contents.     

圆孔液晶透镜的ZEMAX设计与优化

液晶透镜是自由3D显示的新器件,其原理是利用基于向列相液晶指向矢随外加电场作用发生变化的光电特性。本文提出一种简易准确的透镜参数设计和优化方案。以单圆孔结构的液晶透镜为例,利用光学软件ZEMAX和焦距缩放法对圆孔结构的液晶透镜的参数加以设计并优化。分析液晶透镜的像差,评价成像质量。结果表明,优化后的液晶透镜的像差明显减小,3.5°视场下,弥散斑均方根半径RMS值由248.118μm减小到62.192μm,为原来的25.1%;光学调制传递函数MTF值明显改善。最后实验测试验证了液晶透镜阵列的衍射光斑亮度及清晰度均显著提高。