公历纪年计算常识

众所周知,孔子生于公元前551年。问:今年(1995年)为孔子诞生多少年? 这个计算题太简单了,按照现在大家都熟悉的计算方法,将公元前的年号写为负某某年,公元后则为正某某年,用正某某年减去负某某年,所计算出来的数字则为二者之间的周年。用1995年减去公元前551年,[1995-(-551)=2546]为此得出1995年为孔子诞生2546周年。而正确答案是1995年为孔子诞生2545周年。     

新型M-THGEM结构探测器的蒙特卡罗模拟研究

新型多层厚型气体电子倍增器（Multi-layers THick Gas Electron Multiplier,M-THGEM）和传统THGEM （厚型气体电子倍增器）相比,具有连续的雪崩区,能够在低气压和低电压下都有较高增益,结构更紧凑,易于大面积制作等优势。对M-THGEM探测器的工作原理及性能进行了模拟研究,首先通过有限元（ANSYS）软件对二层与三层结构的M-THGEM进行了建模,对电场和电势分布分别进行了模拟计算;再利用Garfield++程序包对M-THGEM探测器在不同低气压和不同工作电压下的增益、感生信号、正离子反馈率等性能进行了研究。模拟结果表明,三层结构M-THGEM在低气压（200 Torr）、纯He气体条件下,能够获得较稳定的增益（105）,输出信号的宽度在12 ns左右;同时,为降低正离子反馈率,本工作提出并研究了一种非对称的电压施加方式,结果表明,这种施加方式能有效降低正离子的反馈率。Compared to THGEM (Thick Gas Electron Multiplier), the novel Multilayer Thick Gaseous Electron Multiplier (M-THGEM) has many advantages, such as continuous avalanche zone, more compact structure, high gain at low pressure and low operating voltage, and easy to make large-area production. In the presented work, two types of the M-THGEM detector (two or three layers) were modeled, and their main principle and performances were also studied by simulation. Two types of the detector were molded and simulated by using the finite element software (ANSYS), and the electric field distribution and nodes information lists were figured out. The effective gain and induced signal from M-THGEM detector at different gas pressures and operating voltages were studied with the Garfield++ package. The simulation results shown that M-THGEM can obtain a stable higher gain around 105 in an environment where has a low pressure even in 200 Torr and within a pure inertia gas such as He. At this condition, the width of the induced signal from the three-layers structure is around 120 ns. Additionally, an asymmetric way of the applied voltage was studied and aim to reduce the efficiency of ion feedback, and our results show that this method is effective.