Voltage-controllable magnetic skyrmion dynamics for spiking neuron device applications

Voltage-controlled magnetic skyrmions have attracted special attention because they satisfy the requirements for well-controlled high-efficiency and energy saving for future skyrmion-based neuron device applications.In this work,we propose a compact leaky-integrate-fire(LIF)spiking neuron device by using the voltage-driven skyrmion dynamics in a multiferroic nanodisk structure.The skyrmion dynamics is controlled by well tailoring voltage-induced piezostrains,where the skyrmion radius can be effectively modulated by applying the piezostrain pulses.Like the biological neuron,the proposed skyrmionic neuron will accumulate a membrane potential as skyrmion radius is varied by inputting the continuous piezostrain spikes,and the skyrmion radius will return to the initial state in the absence of piezostrain.Therefore,this skyrmion radius-based membrane potential will reach a definite threshold value by the strain stimuli and then reset by removing the stimuli.Such the LIF neuronal functionality and the behaviors of the proposed skyrmionic neuron device are elucidated through the micromagnetic simulation studies.Our results may benefit the utilization of skyrmionic neuron for constructing the future energy-efficient and voltage-tunable spiking neural networks.     

周期性应变调控斯格明子在纳米条带中的运动

斯格明子是一种拓扑稳定的手性自旋结构,凭借其在磁性赛道存储器和自旋电子器件方面的巨大应用潜力而受到研究人员的广泛关注.为了使斯格明子能够更好地应用于磁性赛道存储器,研究斯格明子在纳米条带中的运动行为就变得非常重要.本文主要研究了存在周期性应变的纳米条带中铁磁斯格明子和反铁磁斯格明子在电流驱动下的运动行为.研究结果表明:周期性应变使得驱动电流存在一个临界电流密度,只有当电流密度大于临界电流密度时斯格明子才能够在纳米条带中连续移动.临界电流密度随应变振幅的增加而增加,随应变周期的增加而减小.铁磁斯格明子在周期性应变的调制下会产生周期性运动,轨迹为波浪式,其横向速度受到边界的影响,而纵向速度则与应变梯度成正比.反铁磁斯格明子在周期性应变调控下运动方向不变,但其移动速度则剧烈变化.     

薄膜异质结中磁性斯格明子的相关研究

磁性斯格明子由于具有拓扑保护、尺寸小、驱动电流密度低等优异的属性,有望作为未来超高密度磁存储和逻辑功能器件的信息载体.为了满足器件中信息写入和读取的基本要求,需要在室温下实现斯格明子的精确产生、操控和探测.该综述简要介绍最近我们针对上述问题取得的一系列研究进展,包括:1)证明可以通过控制磁性薄膜材料的垂直磁各向异性在室温下产生斯格明子,并进一步在基于反铁磁的薄膜异质结中发现了室温、零磁场下稳定存在的斯格明子;2)证明能够利用电流产生的自旋轨道力矩操控斯格明子,并进一步制备出一种基于斯格明子的原理型器件,实现了利用电学方式产生和操控数量可控的斯格明子.     

梯度磁场中自旋-轨道耦合旋转两分量玻色-爱因斯坦凝聚体的基态研究

利用准二维Gross-Pitaevskii方程,研究了在梯度磁场中具有自旋-轨道耦合的旋转两分量玻色-爱因斯坦凝聚体的基态结构.探索了自旋-轨道耦合作用和梯度磁场对基态的影响.结果发现,在梯度磁场下,随着自旋-轨道耦合强度增大,基态结构由skyrmion格子逐渐过渡为skyrmion列.对于弱自旋-轨道耦合和小旋转频率情况,增大磁场梯度强度可导致基态由平面波相转变为half-skyrmion;对于强自旋-轨道耦合和大旋转频率情况,梯度磁场可诱导hidden涡旋的产生.梯度磁场、自旋-轨道耦合和旋转作为体系的调控参数,可用于控制不同基态相间的转化.     

Spin transfer nano-oscillator based on synthetic antiferromagnetic skyrmion pair assisted by perpendicular fixed magnetic field

As a microwave generator, spin transfer nano-oscillator (STNO) based on skyrmion promises to become one of the next-generation spintronic devices. However, there still exist a few limitations to the practical applications. In this paper, we propose a new STNO based on synthetic antiferromagnetic (SAF) skyrmion pair assisted by a perpendicular fixed magnetic field. It is found that the oscillation frequency of this kind of STNO can reach up to 5.0 GHz, and the multiple oscillation peak with higher frequency can be realized under a fixed out-of-plane magnetic field. Further investigation shows that the skyrmion stability is improved by bilayer antiferromagnetic coupling, which guarantees the stability process of skyrmion under higher spin-polarized current density. Our results provide the alternative possibilities for designing new skyrmion-based STNO to further improve the oscillation frequency, and realize the output of multiple frequency microwave signal.     

磁斯格明子拓扑特性及其动力学微磁学模拟研究进展

具有非平庸拓扑性的新型磁结构斯格明子,由于其拓扑稳定性、尺寸小、低电流驱动等方面的显著优势,有望应用于自旋电子学储存器件.拓扑和凝聚态物理学的结合,使得斯格明子展现出很多有趣的拓扑物理现象,吸引了众多的研究兴趣,同时这些性质也是其电流驱动下动力学特点的重要影响因素.本文从斯格明子的拓扑物理学基础及其自旋电子学器件应用相关动力学两个方面介绍了相关研究进展.在拓扑物理基础方面,介绍了斯格明子的拓扑霍尔效应、斯格明子霍尔效应以及自旋轨道转矩等拓扑性质,由此讨论了斯格明子的动力学性质及其计算方法;在动力学方面,从非均匀电流驱动生成斯格明子、电流驱动下的稳定输运、产生湮灭过程的人工控制几个赛道存储应用关心的问题简要地介绍了相关微磁学模拟研究最新进展.     

Dense skyrmion crystal stabilized through interfacial exchange coupling: Role of in-plane anisotropy

A Monte Carlo simulated-annealing algorithm was used to study the magnetic state in an in-plane helimagnet layer on triangular lattice that exchange couples to an underlayer with strong out-of-plane anisotropy. In the single helimagnet layer with in-plane anisotropy (K), the formation of labyrinthlike domains with local spin spirals, instead of parallel stripes, is favored, and these domains rapidly transform into dense skyrmion crystals with increasing interfacial exchange coupling (J′), equivalent to a virtual magnetic field, and finally evolve to an out-of-plane uniform state at large enough J′. Moreover, with increasing K, the skyrmion crystal state can vary from regular 6-nearest-neighboring circular skyrmion arrangement to irregular squeezed skyrmions with less than 6 nearest neighbors when the in-plane anisotropy energy is higher than the interfacial exchange energy as the skyrmion number is maximized. Finally, we demonstrated that the antiferromagnetic underlayer cannot induce skyrmions while the chirality inversion can be achieved on top of an out-of-plane magnetization underlayer with 180◦ domain walls, supporting the experimental findings in FeGe thin film. This compelling advantage offers a fertile playground for exploring emergent phenomena that arise from interfacing magnetic skyrmions with additional functionalities.     

Control of Hall angle of Skyrmion driven by electric current

Skyrmions are very promising for applications in spintronics and magnetic memory.It is desired to manipulate and operate a single skyrmion.Here we report on the thermal effect on the motion of current-driven magnetic Skyrmions in magnetic metal.The results show that the magnon current induced by the thermal gradient acts on Skyrmions via magnonic spin-transfer torque,an effect of the transverse and longitudinal Skyrmions drift velocities,thus leading to the effective manipulation of the Hall angle through the ratio of thermal gradient to electric current density,which can be used as a Skyrmion valve.     

磁性斯格明子的研究现状和展望

磁性斯格明子是具有拓扑保护性质的纳米尺度涡旋磁结构.斯格明子主要存在于非中心对称的手性磁性材料以及界面镜面对称性破缺的磁性薄膜材料中.因具有实空间的非平庸拓扑性,磁性斯格明子展现出丰富新奇的物理学特性,例如拓扑霍尔效应,新兴电磁动力学等,为研究拓扑自旋电子学提供了新的平台.另一方面,由于其具有尺寸小,高稳定性和易操控的特性,磁性斯格明子在未来高密度,低能耗,非易失性计算和存储器件中也具有潜在应用.现阶段的研究已经初步发现一系列磁斯格明子材料,并证明能够通过电流操控室温下稳定的磁性斯格明子,但是室温下单个斯格明子的精确产生、湮灭以及探测在实验上仍具有挑战性.本文阐述了磁性斯格明子的基础理论以及动力学研究现状,并对现有的斯格明子材料和斯格明子的产生,湮灭以及探测方法进行了总结,最后还对未来磁性斯格明子的物理理论研究以及应用发展中的挑战和机遇进行了讨论.     

中心对称的阻挫磁体中斯格明子直径的调节

在带有垂直各向异性的二维三角晶格磁体中,当同时存在最近邻铁磁性和第三近邻反铁磁性交换作用时,垂直于膜面施加外磁场会使体系内自旋沿着非共面的方向排列,甚至出现拓扑稳定的斯格明子自旋结构.基于蒙特卡罗模拟方法,本文研究了在该二维阻挫磁体中,竞争性交换作用和外磁场对斯格明子直径的影响.与常规非中心对称的手性磁体中的斯格明子性质类似,外磁场会磁化斯格明子外围自旋而减小斯格明子直径.但是,磁体中反铁磁性交换作用的增强会整体压缩斯格明子.本文结合自旋波理论和蒙特卡罗模拟,首次量化了此类阻挫磁体中斯格明子的直径.结果表明:在弱的反铁磁性交换作用磁体中,斯格明子直径随磁场增大而快速线性减小;随着反铁磁性交换作用的增大,斯格明子直径随外磁场增大的减小变得相对平缓,但在强磁场下也会造成斯格明子直径的加速减小;随着反铁磁性交换作用的增强,斯格明子在不同外磁场下的直径的最大值和中值均从逐渐减小到渐趋稳定,而直径的最小值则从快速减小到表现出很大的涨落.这些现象都可以通过分析斯格明子在不同交换作用和外磁场下的构型和磁能变化加以解释.该项工作阐明了在中心对称的阻挫磁体中斯格明子直径的可调节性,不仅完善了我们对斯格明子本身物理机理的认识,同时也为发展基于斯格明子的新一代存储和逻辑器件提供了理论支撑.     

Dynamics of magnetic skyrmions

We review the recent progress on the magnetic skyrmions in chiral magnetic materials.The magnetic skyrmion is a topological spin configuration with localized spatial extent,which could be thought of as an emergent rigid particle,owing to its particular topological and chiral properties.Static skyrmionic configurations have been found in various materials with different transport and thermodynamic properties.The magnetic skyrmions respond to externally applied fields in a very unique way,and their coupling to other quasiparticles in solid-state systems gives rise to the emergent electrodynamics.Being not only theoretically important,the magnetic skyrmion is also very promising to be the information carrier in next generation spintronic devices.     

Current-driven dynamics of skyrmion bubbles in achiral uniaxial magnets

We report dynamics of skyrmion bubbles driven by spin-transfer torque in achiral ferromagnetic nanostripes using micromagnetic simulations. In a three-dimensional uniaxial ferromagnet with a quality factor that is smaller than 1, the skyrmion bubble is forced to stay at the central nanostripe by a repulsive force from the geometry border. The coherent motion of skyrmion bubbles in the nanostripe can be realized by increasing the quality factor to ～ 3.8. Our results should propel the design for future spintronic devices such as artificial neural computing and racetrack memory based on dipole-stabilized skyrmion bubbles.     

斯格明子相关的螺旋磁有序体系的临界行为

介绍了与斯格明子相关的螺旋磁有序体系的临界行为.首先阐述了连续相变中的临界现象、临界指数、标度律、普适性等概念;随后介绍了磁相变体系中几种临界指数的获得方法,包括直流磁性迭代法、磁熵变法;进而,分析了几类与斯格明子相关的螺旋磁有序体系的临界行为.MnSi是典型的斯格明子材料,临界指数显示其磁性行为符合三重临界行为.MnSi的临界行为揭示:外磁场可以抑制这一体系在零场下的一级相变,使其转变为二级相变,从而在螺旋磁有序、锥形磁有序、顺磁相的三相交汇点形成三重临界点.斯格明子体系FeGe和Cu_2OSeO_3的临界行为符合三维海森伯相互作用,表明它们的磁性行为主要是由近邻的各向同性的自旋耦合作用所决定;而Fe_(1-x)Co_xSi和新发现的斯格明子体系Fe_(1.5-x)Co_xRh_(0.5)MoN的临界行为显示Co掺杂可以有效地调制其中的磁性耦合.对螺旋磁有序体系的临界行为研究表明,尽管这些体系都表现出类似的斯格明子态,但是它们的磁性耦合机制却大不相同,并且其耦合机制可以受到外界手段的调制.最后,根据普适性原理和标度方程,阐述了一种构建磁场诱导相变体系在临界温度附近H-T相图的方法.     

磁性斯格明子的赛道存储

磁性斯格明子是拓扑稳定的自旋结构,它的尺寸小,驱动电流阈值小,被广泛认为是下一代磁性存储的基本单元.斯格明子的主要优势在于它奇特的动力学性质,特别是它能够与传导电子相互作用,在低电流密度驱动下可以在赛道上稳定地运动.本文结合磁性斯格明子赛道存储的最新研究成果,对斯格明子在赛道上的写入、驱动和读出三个方面进行了较为详细的综述.重点介绍了注入自旋极化电流这一最常见的驱动方法,分析了斯格明子在赛道上的堵塞和湮没现象,探讨了斯格明子霍尔效应及其可能造成信号丢失的危害和相关的解决方法,并在此基础上详细介绍了几种斯格明子塞道存储的优化设计方案.最后总结了磁性斯格明子赛道存储面临的一些挑战.     

Non-volatile multi-state magnetic domain transformation in a Hall balance

High performance of the generation, stabilization and manipulation of magnetic skyrmions prompts the application of topological multilayers in spintronic devices. Skyrmions in synthetic antiferromagnets (SAF) have been considered as a promising alternative to overcome the limitations of ferromagnetic skyrmions, such as the skyrmion Hall effect and stray magnetic field. Here, by using the Lorentz transmission electron microscopy, the interconversion between the single domain, labyrinth domain and skyrmion state can be observed by the combined manipulation of electric current and magnetic field in a Hall balance (a SAF with the core structure of [Co/Pt]₄/NiO/[Co/Pt]₄ showing perpendicular magnetic anisotropy). Furthermore, high-density room temperature skyrmions can be stabilized at zero field while the external stimulus is removed and the skyrmion density is tunable. The generation and manipulation method of skyrmions in Hall balance in this study opens up a promising way to engineer SAF-skyrmion-based memory devices.     

The relation between the radii and the densities of magnetic skyrmions

Compared with the traditional magnetic bubble, a skyrmion has a smaller size, and better stability and therefore is considered as a very promising candidate for future memory devices. When skyrmions are manipulated, erased and created, the density of skyrmions can be varied, however the relationship between the radii and the densities of skyrmions needs more exploration. In this paper, we study this problem both theoretically and by using the lattice simulation. The average radius of skyrmions as a function of material parameters, the strength of the external magnetic field and the density of skyrmions is obtained and verified. With this explicit function, the skyrmion radius can be easily predicted, which is helpful for the future study of skyrmion memory devices.     

Magnetic skyrmion dynamics in thin cylindrical dots

We calculate high‐frequency spin excitations of the skyrmion ground state cylindrical magnetic dots. The skyrmion is assumed to be stabilized at room temperature due to interplay of the isotropic and Dzyaloshinskii–Moriya exchange interactions, perpendicular magnetic anisotropy and magnetostatic interaction. The Skyrmion ground state is represented as combination of two radially symmetric bubble domains. To consider the Bloch‐ and Néel‐type magnetic skyrmion dynamics we apply an approximation of ultrathin domain wall between the circular domains and assume that the magnetic dot is thin enough (magnetization does not depend on the thickness coordinate). The eigenfunctions/eigenfrequencies of spin wave excitations over the skyrmion background are calculated as a function of the skyrmion radius. The developed approach allows predicting spin wave eigenfrequencies in the skyrmion ground state magnetic dots. Recent experiments on magnetic skyrmion dynamics are discussed. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

磁畴壁手性和磁斯格明子的拓扑性表征及其调控

磁性斯格明子由于拓扑的保护性,具有很高的稳定性和较小的临界驱动电流,有望应用于未来的赛道存储器件中.而在中心对称体系,由于偶极作用的各向同性,磁泡的拓扑性和螺旋度都呈现出多样性的特征.其中非平庸的磁泡即等同于磁性斯格明子.我们通过近期实验结果,结合微磁学模拟的方法,发现在中心对称体系中磁斯格明子的拓扑性会受到体系垂直各向异性的调控.另外在加磁场的演变过程中,会很大程度上依赖于基态畴的畴壁特性.磁场的倾斜或者一定的面内各向异性也会改变磁斯格明子的形态.通过对材料的基态磁结构及磁各向异性的调节,辅助以面内分量的控制,可以对基态磁畴、进而对磁斯格明子的拓扑性实现调控.这对磁斯格明子在电流驱动存储器件中的应用具有重要意义.     

磁性斯格明子的多场调控研究

斯格明子(skyrmion)的概念最早是由英国的粒子物理学家Tony Skyrme提出,它被用来描述粒子的一个状态,是一种拓扑孤立子.磁性斯格明子是一种具有拓扑行为的新型磁结构,其空间尺寸为纳米量级,空间距离从纳米到微米量级可调;其存在温度涵盖从低温、室温到高温的宽温区;其材料体系不仅包括早期发现的低温区B20型中心对称破缺的铁磁体和螺旋磁有序的弱铁磁材料,也包括近期发现的室温及以上的中心对称六角结构磁性MnNiGa金属合金和磁性薄膜/多层膜体系.利用磁性斯格明子的拓扑磁结构可以实现类似于自旋阀或者磁性隧道结中的自旋转移矩效应,即外加电流可以驱动斯格明子,其临界电流密度比传统翻转磁性多层膜体系中磁矩的电流密度(一般为10~7A/cm~2)要低5个数量级,约为10~2A/cm~2,该临界值远低于硅基半导体技术中沟道电流密度的上限,在未来的磁信息技术中具有广泛的应用前景.本综述简单介绍了磁性斯格明子的发展历程,归纳总结了磁性斯格明子的材料体系,介绍了观察磁性斯格明子的实验手段,重点介绍了多场(磁场、电流、温度场)调控作用下中心对称MnNiGa合金和Pt/Co/Ta磁性多层膜体系中磁性斯格明子的产生、消失以及外场调控演变等动态行为.     

界面Dzyaloshinskii-Moriya相互作用下辐射状磁涡旋形成机制

辐射状磁涡旋结构是一种稳定的拓扑磁结构,因其具有热稳定性高、驱动电流小等特点,成为当前继斯格明子之后又一新兴的研究热点.本文利用微磁学模拟方法研究了在界面Dzyaloshinskii-Moriya相互作用（IDMI）下辐射状磁涡旋形成机制.结果表明：纳米盘直径越小,能稳定形成辐射状磁涡旋的IDMI强度范围就越大,当圆盘厚度增加一个数量级时,虽然可以稳定形成辐射状磁涡旋,但IDMI强度取值范围会随之变小.通过对不同磁矩初始态下辐射状磁涡旋的形成过程中磁矩、斯格明子数及各项能量变化的研究发现,环形涡旋和单畴均可作为辐射状磁涡旋形成的初始状态,但单畴初始态的形成时间比环形涡旋初始态的形成时间更长,其能量衰减时间比以环形涡旋为初始态的衰减时间更短.这表明形成辐射状磁涡旋极性比形成辐射旋性需要更长时间,且能量变化主要与涡旋核的生成及面内辐射状磁矩有关,而与涡旋核在盘中的位置无关.研究结果揭示了辐射状磁涡旋的形成机制,为基于辐射状磁涡旋的具体应用提供了理论依据.