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Skyrmion transport driven by pure voltage generated strain gradient
Institution:1.Institute for Quantum Information&State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China;2.Hunan University of Humanities Science and Technology, Loudi 417000, China
Abstract:The magnetic skyrmion transport driven by pure voltage-induced strain gradient is proposed and studied via micromagnetic simulation. Through combining the skyrmion with multiferroic heterojunction, a voltage-induced uniaxial strain gradient is adjusted to move skyrmions. In the system, a pair of short-circuited trapezoidal top electrodes can generate the symmetric strain. Due to the symmetry of strain, the magnetic skyrmion can be driven with a linear motion in the middle of the nanostrip without deviation. We calculate the strain distribution generated by the trapezoidal top electrodes pair, and further investigate the influence of the strain intensity as well as the strain gradient on the skyrmion velocity. Our findings provide a stable and low-energy regulation method for skyrmion transport.
Keywords:skyrmion  strain gradient  multiferroic heterojunction  spintronics  
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