大高宽比纳米硅立柱的感应耦合等离子体刻蚀工艺优化

针对氢基硅倍半氧烷(hydrogen silsesquioxane,HSQ)作为深反应离子刻蚀(DRIE)掩膜形成大高宽比纳米硅立柱的工艺进行了系统研究。优化了刻蚀工艺中线圈功率、极板功率和气体流量参数,减小了横向刻蚀,使形貌垂直性得到了更好的控制,并实现了13.3 m高度和低侧壁粗糙度的垂直硅纳米柱阵列,其高宽比（高度/半高宽）达到了36。利用不同的刻蚀工艺条件得到了不同侧壁形貌以及不同尺寸、高度的硅纳米柱结构。     

Nanofabrication of 50 nm zone plates through e-beam lithography with local proximity effect correction for x-ray imaging

High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmost zone-width is shrinking down to 50 nm or even below,patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect.The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction(PEC),because of the large variety in the line width.This work develops a new strategy,nicknamed as local proximity effect correction(LPEC),efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction.By this way,50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated.Their imaging capability in soft(1.3 keV)and hard(9 keV)x-ray,respectively,has been demonstrated in Shanghai Synchrotron Radiation Facility(SSRF)with the resolution of 50 nm.The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.     

折射式激光多普勒测速系统

为了测量透明物体横向运动时的位移速度,提出了一套基于激光外差干涉技术的折射式激光多普勒测速系统,并对该系统所采用的多普勒效应测速方法进行了研究。首先,通过外差干涉系统使测量光与参考光发生干涉,利用信号探测系统探测它们合光束光强变化波形。然后,使用信号分析软件分析此波形,得到合光束的拍频,即测量光与参考光的频率之差。最终,利用此拍频值进行理论计算,求出垂直于探测光方向匀速运动时三棱镜样品的位移速度,并分析了整个系统的测量误差。实验结果表明,对20μm/s、80μm/s、140μm/s、200μm/s等给定的位移速度,该系统的速度测量误差不超过1.5%。测量结果具有良好的可重复性,证实了该系统的有效性与可靠性。实验系统原理简单,输出信号信噪比较高,测量精度高,具有广泛的适用性。