首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   3篇
  免费   7篇
物理学   10篇
  2005年   2篇
  2004年   2篇
  2003年   2篇
  2002年   1篇
  2001年   3篇
排序方式: 共有10条查询结果,搜索用时 15 毫秒
1
1.
We have studied the basic characteristics of a radio frequency superconducting quantum interference device (rf SQUID) involving two Josephson junctions connected in series, the case for the widely used grain boundary junction (GBJ) rf SQUID. It is found that the SQUID properties are determined mainly by the weaker junction when the critical current of the weaker junction is much lower than that of the other junction. Otherwise, the effect of the other junction is not negligible. We also find that only when the hysteresis parameter β is less than 1-α, where α is the critical current ratio of the two junctions, will the SQUID operate in the nonhysteretic mode.  相似文献   
2.
本文报导了一种新型结构的高温超导薄膜梳齿谐振器.我们通过改变谐振器梳齿的长度,使谐振器的谐振频率可以从800MHz到1300MHz左右,这正是我们研制的Hi-Tc rf SQUID所需要的两个频段.我们对这种新型谐振器的谐振频率与几何尺寸的关系进行了数值拟合.测试了使用该种新型谐振器的Hi-Tc rf SQUID的噪声.  相似文献   
3.
A new high-T_c (HT_c) rf SQUID working at around 1.3GHz has been developed to avoid electromagnetic interference such as growing mobile communication jamming. This new system works in a frequency range from 1.23 to 1.42GHz (centred at 1.3GHz), which is not occupied by commercial communication. The sensor used in the 1.3GHz rf SQUID is made of a HT_c coplanar superconducting resonator and a large-area HT_c superconducting film concentrator. We have achieved in the 1.3GHz HT_c rf SQUID system a minimal flux noise of 2.5×10^{-5}Φ_0/\sqrt{Hz} and a magnetic field sensitivity of 38fT/\sqrt{Hz} in white noise range, respectively. The effective area of the concentrator fabricated on a 15×15mm^2 substrate is 1.35mm^2. It is shown that the 1.3GHz rf SQUID system has a high field sensitivity. Design and implementation of 1.3GHz HT_c rf SQUID offers a promising direction of rf SQUID development for higher working frequency ranges.  相似文献   
4.
分析和计算了Tsuei三晶实验中有一个结是π结的三结π环的自发磁化 ,发现与单结π环明显不同 ,当 β =2πLIc 0 趋于零时 ,环中仍有自发磁化 .详细计算表明随温度下降 ,β值增大 ,自发磁化磁矩很快上升并趋于0 2 .很好地说明了Tsuei的自发磁化温度曲线 .  相似文献   
5.
关键词: c rf SQUID')" href="#">高Tc rf SQUID 新型结构 大有效面积 磁通聚焦器  相似文献   
6.
我们使用脉冲激光沉积方法对YBa2Cu3O7-δ(YBCO)薄膜在MgO基片上通过CeO2/YSZ双缓冲层的生长进行了系统的研究,发现MgO单晶基片的表面质量是决定能否得到理想外延薄膜质量的关键因素,通过使用低能离子束对MgO表面进行轰击,以增加其表面粗糙度和去除变质层,得到了具有100%面内45°旋转的YBCO外延膜,其临界电流密度77K时在106A/cm2量级.通过湿法刻蚀得到的双外延Josephson结表现出RSJ特性.  相似文献   
7.
A new high-T_c (HT_c) rf SQUID working at around 1.3GHz has been developed to avoid electromagnetic interference such as growing mobile communication jamming. This new system works in a frequency range from 1.23 to 1.42GHz (centred at 1.3GHz), which is not occupied by commercial communication. The sensor used in the 1.3GHz rf SQUID is made of a HT_c coplanar superconducting resonator and a large-area HT_c superconducting film concentrator. We have achieved in the 1.3GHz HT_c rf SQUID system a minimal flux noise of 2.5×10^{-5}Φ_0/\sqrt{Hz} and a magnetic field sensitivity of 38fT/\sqrt{Hz} in white noise range, respectively. The effective area of the concentrator fabricated on a 15×15mm^2 substrate is 1.35mm^2. It is shown that the 1.3GHz rf SQUID system has a high field sensitivity. Design and implementation of 1.3GHz HT_c rf SQUID offers a promising direction of rf SQUID development for higher working frequency ranges.  相似文献   
8.
设计和制作了一种新型结构的高Tc rf SQUID探头.在使用高温超导薄膜共面谐振器作为射频谐振回路的情况下,采用了大面积高温超导薄膜作磁聚焦器.这种结构既有利于得到低的磁通白噪声,又可加上大面积聚焦器以增大有效面积,因而容易得到高的磁场灵敏度.实验中在15 mm×15 mm的衬底上得到了有效面积为1.27 mm2,在磁通噪声为2.1×10-5φ0/Hz时,磁场灵敏度为34fT/Hz.该结构易于推广应用到更高频率的高Tc rf SQUID.  相似文献   
9.
高Tc超导π环的自发磁化   总被引:1,自引:1,他引:0       下载免费PDF全文
邓鹏  孟树超  王福仁  谢飞翔  马平  戴远东 《物理学报》2001,50(11):2217-2220
分析和计算了Tsuei三晶实验中有一个结是π结的三结π环的自发磁化,发现与单结π环明显不同,当β=2πLIc0趋于零时,环中仍有自发磁化.详细计算表明随温度下降,β值增大,自发磁化磁矩很快上升并趋于φ0/2.很好地说明了Tsuei的自发磁化温度曲线. 关键词: 自发磁化 π结 自由能  相似文献   
10.
在10mm*10mm*1mm的LaAlO3基片上设计和制成了一种新结构的800MHz超导共面谐振器,它可以和外尺寸9mm*9mm的垫片式rfSQUID器件实现有效的耦合,对于使用超导共面谐振器的rf SQUID,该方案为提高器件有效面积和磁场灵敏度提供了新的方法.  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号