掺金单晶硅特性的研究

本文研究单晶硅掺金前后的表面光伏和红外吸收谱,证实在相同表面状况下,红外吸收谱的基线与少子扩散长度的对应关系;由半导体统计,推导出简并因子不等于1时扩金硅的统计公式,以及金受主简并因子g_Au,a≠1,金施主简并因子g_Au,d≠1硅双重能级复合理论公式,由此计算的少子寿命值与测量值之比在1.64—0.745之间。 关键词：     

Irradiation effect of yttria-stabilized zirconia by high dose dual ion beam irradiation

Yttria-stabilized zirconia （YSZ） is irradiated with 2.0-MeV Au2＋ ions and 30-keV He＋ ions. Three types of He, Au, Au ＋ He （successively） ion irradiation are performed. The maximum damage level of a sequential dual ion beam implanted sample is smaller than single Au ion implanted sample. A comparable volume swelling is found in a sequential dual ion beam irradiated sample and it is also found in a single Au ion implanted sample. Both effects can be explained by the partial reorganization of the dislocation network into weakly damaged regions in the dual ion beam implanted YSZ. A vacancy-assisted helium trapping/diffusion mechanism in the dual ion beam irradiated condition is discussed. No phase transformation or amorphization behavior happens in all types of ion irradiated YSZ.