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We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact (W-BEC) array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage (I- V) measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state (HRS) to low-resistance state (LRS). In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application. 相似文献
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Novel Si3.5Sb2Te3 phase change material for phase change memory is prepared by sputtering of Si and Sb2Te3 alloy targets. Crystalline Si3.5Sb2Te3 is a stable composite material consisting of amorphous Si and crystalline Sb2Te3, without separated Te phase. The thermally stable Si3.5Sb2Te3 material has data retention ability (10 years at 412K) better than that of the Ge2Sb2Te5 material (10 years at 383 K). Phase change memory device based on Si3.5Sb2Te3 is successfully fabricated, showing low power consumption. Up to 2.2 × 107 cycles of endurance have been achieved with a resistance ratio lager than 300. 相似文献
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