一类二阶带阻尼项的不稳定型差分方程的振动性与非振动性

应用分类讨论方法和分析方法,讨论了一类广泛的二阶非线性差分方程解的振动性与非振动性,推广并改进了已有文献中的相关结果.     

非线性脉冲差分方程解的稳定性

应用不等式估值法讨论了非线性脉冲时滞差分方程解的性质,并得到它的解的一致稳定性的一些充分条件.     

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

The field emission （FE） properties of vertically aligned graphene sheets （VAGSs） grown on different SiC substrates are reported. The VAGSs grown on nonpolar SiC （10-10） substrate show an ordered alignment with the graphene basal plane-parallel to each other, and show better FE features, with a lower turn-on field and a larger field enhancement factor. The VAGSs grown on polar SiC （000-1 ） substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%. The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed.     

AlN/InN和AlN/GaN超晶格能带结构研究

利用Krönig-Penney 模型和形变势理论,从理论上探讨了纤锌矿型AlN/InN和AlN/GaN超晶格系统的能带结构及不同应变模式对能带结构的影响,计算得到了能带结构随各亚层参量变化的一般性规律、超晶格的能量色散关系、应变造成的影响以及不同亚层厚度的系统禁带宽度和导带第一子禁带宽度.研究发现,通过改变亚层厚度可以从不同形式设计能带结构,应变会改变系统禁带宽度,使带阶和子能带明显窄化,价带结构趋于复杂甚至生成准能带结构.与实验结果对比后发现,该模型适于模拟窄势阱结构超晶格,而对于宽势阱则必须 关键词： AlN/InN和AlN/GaN超晶格 Krönig-Penney模型 应变 子能带     

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy.Here,we report a graphene/silicon carbide(SiC)-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A/W with a response frequency of over a megahertz under 325-nm laser irradiation.The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices.These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC,two terminal electrodes,and asymmetric light irradiation on one of the electrodes.Importantly,the photon energy is larger than the band gap of SiC.This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.     

一类非线性时滞差分方程的稳定性

得到了一类线性非自治时滞差分方程的零解的一致稳定、一致渐近稳定和全局渐近稳定的充分条件.     

煅烧温度对湿化学法制备AlN粉体的影响

以六水合氯化铝和尿素为原料,甲醇为溶剂,在NH₃气氛下通过湿化学法制备AlN粉体,并采用X射线衍射仪、扫描电子显微镜和激光粒度仪对产物进行表征。结果表明:煅烧温度在900 ℃以上可获得六方AlN粉体;煅烧温度为1 000 ℃时获得的AlN粉体具有球形特征,粉体的平均晶粒尺寸为17.0 nm,平均粒径为159.5 nm。使用透射电子显微镜进一步表征了AlN粉体的微观结构。拉曼光谱结合能谱分析表明,存在于AlN粉体中的非晶杂质不是残留的含碳副产物,而是粉体表面水解产生的氢氧化铝。     

一维交替型脉冲微分系统

讨论一维空间中超前型与滞后型交替的脉冲微分系统.首先考虑具常系数的脉冲微分系统平凡解稳定的充分条件;其次研究了具变系数的脉冲微分系统的振动性,并给出了其解的表示式.     

Influence of defects in SiC （0001） on epitaxial graphene

Defects in silicon carbide(SiC) substrate are crucial to the properties of the epitaxial graphene(EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC(0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG.     

Effect of 6H-SiC （1120） substrate on epitaxial graphene revealed by Raman scattering

A nonpolar SiC(1120) substrate has been used to fabricate epitaxial graphene (EG). Two EGs with layer numbers of 8-10 (referred to as MLG) and 2-3 (referred to as FLG) were used as representative to study the substrate effect on EG through temperature dependent Raman scattering. It is found that Raman lineshifts of G and 2D peaks of the MLG with temperature are consistent with that of a free graphene predicted by theory calculation, indicating that the substrate influence on the MLG is undetectable. While Raman G peak lineshifts of the FLG to that of the free graphene are obvious, however, its lineshift rate (-0.016 cm^-1/K) is almost one third of that (-0.043 cm^-1/K) of a EG on 6H-SiC (0001) in the temperature range from 300 K to 400 K, indicating a weak substrate effect from SiC (1120) on the FLG. This renders the FLG a high mobility around 1812 cm²- ·V^-1-·s^-1 at room temperature even with a very high carrier concentration about 2.95× 10¹³ cm^-2 (p-type). These suggest SiC (1120) is more suitable for fabricating EG with high performance.