PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.     

δ掺杂的赝形高电子迁移率晶体管AIGaAs/InGaAs/GaAs结构中的费密边奇异性研究

报道了δ掺杂赝形高电子迁移率晶体管结构Al_(0.30)Ga_(0.70)As/In_(0.15)Ga_(0.85)As/GaAs的光致发光光谱研究的实验结果,除了观察到n=1电子子带到n=1重空穴子带,n=2电子子带到n=1重空穴子带间的强发光峰,还观察到了n=1电子子带到n=1轻空穴子带的弱发光峰,通过变化掺杂浓度来改变费密能级的位置,在这种δ掺杂的HEMTs系统中观察到了费密边奇异性,并把它归结为费密海与费密边附近未占据的第二电子子带之间的近共振散射作用所致。     

中国科学院上海技术物理研究所红外物理实验室

中国科学院上海技术物理研究所建于1958年.1964年以来,该所以红外物理和技术为主要研究方向.近年来,在红外物理方面取得基础研究成果30余项,发表论文40多篇,其中在国际学术会议上发表的有七篇.CdxHg1-xte吸收光谱和声子谱,Cd1-xMnxTe低频声子谱,非晶硅红外、远红外开谱等的研究结果曾引起了国内外同行的兴趣.在InSb和CdxHg1-xTe的电流磁效应和磁阻振荡,CdxHg-1xTe零禁带现象和压力效应,CdMnTe吸收边压力漂移,HgCdTe和PbSnTe电场调制反射谱和CdTe发光光谱等项工作中,也取得了有意义的结果. 中国科学院上海技术物理研究所红外物理实…     

PHOTOLUMINESCENCE PROPERTIES OF NANO-SIZE CRYSTALLINE SILICON FILMS

Photoluminescence (PL) at low temperature is reported for nc-Si:H films grown by PECVD. A characteristic luminescence peak was observed in the wavelength range of 1.1-1.2μm. The temperature dependence of PL has been studied in the temperature range of 4.2-180 K. The PL mechanism of nc-Si:H films is discussed. The emission peak at 1.1-1.2 μm is attributed to the interface atoms between grains, and the emission peak around 0.9μm is due to a little amount of amorphous component.     

δ掺杂的赝形高电子迁移率晶体管AlGaAs/InGaAs/GaAs结构的光谱研究

报道δ掺杂赝形高电子迁移率晶体管结构Al(?)Ga(?)As/In(?)Ga(?),As/GaAs的综合光谱研究结果。采用光致发光光谱,平面光电流谱和光致发光激发光谱方法,并与理论计算相对比,确认了光致发光谱上n=1电子子带n=2电子子带到n=1重空穴子带间的强发光峰,对弱峰C的研究表明它是n=1电子子带到n=1轻空穴子带复合跃迁的发光峰。由于费密能级高于第二电子子带,没有发现文献中曾报道过的属于费密边的发光峰;平面光电流谱和光致发光激发光谱观察到n=1重空穴子带到n=1,2,3电子子带的三个激子跃迁峰。 关键词：     

退火对a-SixC1-x:H薄膜带尾态的影响

本文研究了退火后的a-Si_xC_1-x:H薄膜的光致发光光谱,采用发光光谱的峰值能量与测量温度之间的关系判别带尾宽度的大小。实验表明,发光峰值能量随退火温度的升高而移向低能。用指数带尾模型计算了带尾宽度。结果表明,随着退火温度的上升带尾变小。文中对这些结果进行了讨论。 关键词：     

调制掺杂的应变In0.60Ga0.40As/In0.52Al0.48As多量子阱结构的光致发光谱研究

报道了调制掺杂的应变In_0.60Ga_0.40As/In_0.52Al_0.48As多量子阱中室温光致发光光谱.观察到n=1和2电子子带到n=1重空穴子带的强发光峰.在低温下可以观察到n=1电子子带到n=1轻空穴弱发光肩胛.通过对发光强度随激发功率及温度依赖关系以及理论模型的分析研究,认为该调制掺杂量子阱中辐射复合效率降低的主要机制是应变失配位错对载流子的陷阱作用.界面上的失配位错是陷阱的主要来源.并用静态的光致发光理论模型 关键词：     

PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.     

调制掺杂的应变In_(0.60)Ga_(0.40)As/In_(0.52)Al_(0.48)As多量子阱结构的光致发光谱研究

报道了调制掺杂的应变In_(0.60)Ga_(0.40)As/In_(0.52)Al_(0.48)As多量子阱中室温光致发光光谱.观察到n=1和2电子子带到n=1重空穴子带的强发光峰.在低温下可以观察到n=1电子子带到n=1轻空穴弱发光肩胛.通过对发光强度随激发功率及温度依赖关系以及理论模型的分析研究,认为该调制掺杂量子阱中辐射复合效率降低的主要机制是应变失配位错对载流子的陷阱作用.界面上的失配位错是陷阱的主要来源.并用静态的光致发光理论模型对实验结果进行了解释.     

导电聚合物P3MT的荧光光谱

本文报道了导电聚合物P3MT的荧光光谱及其随样品掺杂浓度、激光强度和温度的变化。实验表明在基态非简并的导电聚合物P3MT中可同时存在三种不同的辐射跃迁:电子-空穴的带间直接复合,激子复合以及带边和双极化子能级之间的辐射跃迁。 关键词：