化学抛光和退火对钛酸锶基片表面改性研究

本文运用原子力显微镜检测传统机械抛光和化学机械抛光以及退火前后的钛酸锶(STO)衬底表面,研究了化学机械抛光和退火对钛酸锶(STO)基片表面形貌的影响,结果表明化学抛光可以使表面粗糙度达到0.214 nm,明显优于机械抛光.对比测量退火前后钛酸锶(STO)基片的双晶摇摆曲线,表明退火可以明显改善晶体质量,有利于实现超光滑STO基片的加工.     

Sm：GdVO4晶体的生长及光谱性能研究

应用中频感应提拉法生长出掺杂浓度为2%原子分数的Sm:GdVO4晶体,研究了室温下c轴方向sm:GdVO4晶体的吸收和荧光光谱.通过J-O理论计算出强度参数(Ωt),同时计算了对应于4G5/2能级的自发跃迁几率、荧光分支比和辐射寿命.通过荧光光谱计算了对应于566、604和646nm三个发射峰对应的发射截面,结果表明,Sm:GdVO4在604 nm的发射截面最大,是掺Sm:YAP在607 nm处发射截面的4.4倍.     

Spectroscopic properties of Tm,Ho:LiLuF_4

LiLuF4 single crystals co-doped with thulium （5%） and holmium （0.5%）, having large size, intact shape, and high optical quality, are successfully grown by the Czochralski technique. Absorption and fluorescence spectra of the crystal are measured. The absorption spectrum shows that the main absorption band locates at near 686 and 792 nm and the fluorescence spectrum peaks at 2.05 um. At room temperature, the as-grown Tin, Ho： LiLuF4 single crystals are end-pumped by a fiber-coupled laser diode system with pumping wavelength of 795 nm under CW operations. A power of 50 mw contin- uous laser outout at 2.05-um wavelength is achieved. Meanwhile an obvious green light is detected.