黑硅与黑硅太阳电池的研究进展

黑硅材料的特殊结构能够极大地降低硅表面的光反射,有效地提高硅基太阳能电池转换效率。本文介绍了国内外黑硅制备技术的进展,黑硅的制备方法主要包括飞秒激光法、化学腐蚀法、反应离子刻蚀法和电化学腐蚀法。还概述了黑硅太阳电池的研究进展,并展望了黑硅及其应用的发展趋势。     

Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.     

快离子导体LiTi2(PO4)3在LiNi0.8Co0.1Mn0.1O2正极材料表面的原位反应包覆及其电化学性能

通过原位反应法,利用富镍层状金属氧化物LiNi_0.8Co_0.1Mn_0.1O₂（LNCM811）正极材料表面残余的氢氧化锂和碳酸锂,与C₈H₂₀O₄Ti和（NH₄）H₂PO₄反应,在LNCM811表面原位生成快离子导体LiTi₂（PO₄）₃（LTP）包覆层。这种原位反应的包覆方法有利于移除LNCM811表面有害的残留物氢氧化锂和碳酸锂。而且,获得的LTP均匀包覆层不仅可以有效地抑制LNCM811表面和电解液的直接接触及其副反应,还可以确保充放电循环过程中LNCM811正极材料的快速Li⁺传导。因此,在LTP包覆层的多重作用下,LTP包覆的LNCM811正极材料具有优异的循环稳定性和倍率性能：在0.2C时,首次放电比容量高达200.6 mAh·g^-1,200圈后的可逆容量依然有155.7 mAh·g^-1;在2C和5C的高电流密度下,200圈后的可逆容量仍然有126.4和111.9 mAh·g^-1。     

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15nm)/a-Si:H(10nm)/ epitaxial c-Si(47μm)/epitaxial c-Si(3μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer S d (Sd =PH3 /(PH3 +SiH4 +H2 )) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35mA/cm2 , a fill factor of 63.3%, and a conversion efficiency of 7.9%.     

Photoemission cross section:A critical parameter in the impurity photovoltaic effect

A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic(IPV) effect for silicon solar cells doped with indium. The photovoltaic parameters(short-circuit current density, opencircuit voltage, and conversion efficiency) of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is 10-20cm~2, the conversion efficiencyη of the IPV cell always has a negative gain(?η 0) if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small(large) hole photoemission cross section and large(small) electron photoemission cross section,whose energy levels are near the valence(or conduction) band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.     

热丝CVD法沉积固态扩散源制备晶硅太阳电池p+/n+发射极研究

为进一步提高晶硅太阳能电池发射极的性能,本文提出了一种新的发射极制备技术-低温CVD法沉积固态薄膜扩散源并进行高温扩散.采用热丝化学气相沉积法(HWCVD)在单晶硅片上沉积重掺杂硅基薄膜作为固态扩散源,然后在空气氛围下的管式炉中进行高温扩散,最后用稀HF溶液去除表面的BSG/PSG.通过掺磷薄膜扩散在P型单晶硅片上制备了方阻在50～250 Ω/□范围内可控的n+型发射极;通过掺硼薄膜扩散在N型硅片上制备了方阻在150 ～600Ω/□□范围内可控的p+型发射极.并且通过在源气体中加入CO2作为氧源,实现了扩散后硅片表面残留扩散源层的彻底去除.     

Cu3P纳米板阵列@泡沫铜三维骨架的原位构筑及其作为高性能锂金属负极

通过简单的原位生长法,将Cu3P纳米板阵列均匀负载在商业化的泡沫铜内部(NF?Cu3P@Cu),并用作锂金属负极的三维骨架载体材料。亲锂性的Cu3P纳米板阵列可以提供均匀且丰富的锂成核活性位点,诱导锂金属在NF?Cu3P@Cu内快速形核和均匀电沉积。同时,在电镀沉积锂时,Cu3P纳米板阵列会被锂化形成快离子导体Li3P,可以确保锂离子在复合负极中的快速均匀传输,从而有效抑制锂枝晶的形成。因此,获得的Li@NF?Cu3P@Cu复合负极材料在对称电池和全电池中,均表现出优异的循环稳定性。     

Performance of n-type silicon/silver composite anode material in lithium ion batteries: A study on effect of work function matching degree

In this paper, two types of silicon(Si) particles ball-milled from n-type Si wafers, respectively, with resistivity values of 1 Ω·cm and 0.001 Ω·cm are deposited with silver(Ag). The Ag-deposited n-type 1-Ω·cm Si particles(nl-Ag) and Ag-deposited n-type 0.001-Ω·cm Si particles(n0.001-Ag) are separately used as an anode material to assemble coin cells,of which the electrochemical performances are investigated. For the matching of work function between n-type 1-Ω·cm Si(nl) and Ag, nl-Ag shows discharge specific capacity of up to 683 mAh·g~(-1) at a current density of 8.4 A·g~(-1), which is40% higher than that of n0.001-Ag. Furthermore, the resistivity of nl-Ag is lower than half that of n0.001-Ag. Due to the mismatch of work function between n-type 0.001-Ω·cm Si(n0.001) and Ag, the discharge specific capacity of n0.001-Ag is 250.2 mAh·g~(-1) lower than that of nl-Ag after 100 cycles.