The Effect of Viscosity on the Diffusion and Termination Reaction of Organic Radical Pairs

The effect of viscosity on the diffusion efficiency (F_dif) of an organic radical pair in a solvent cage and the termination mechanism, that is, the selectivity of disproportionation (Disp) and combination (Comb) of the geminated caged radical pair and the diffused radicals encountered, were investigated quantitatively by following the photolysis of dimethyl 2,2′-azobis(2-methylpropionate) (V-601) in the absence and presence of PhSD. F_dif and Disp/Comb selectivity outside the cage [Disp_(dif)/Comb_(dif)] are highly sensitive to the viscosity. In contrast, the Disp/Comb selectivity inside the cage [Disp_(cage)/Comb_(cage)] is rather insensitive. The difference in viscosity dependence between Disp_(cage)/Comb_(cage) and Disp_(dif)/Comb_(dif) is explained by the spin state of the radical pair inside and outside the cage and the spin state dependent configurational changes of the radical pair upon their collision. Given that the configurational change of the radicals associates the displacement and reorganization of solvents around the radicals, the termination outside the cage, which requires larger change than that inside the cage, is highly viscosity dependent. Furthermore, while the bulk viscosity of each solvent shows good correlation with F_dif and Disp/Comb selectivity, microviscosity is the better parameter predicting F_dif and Disp_(dif)/Comb_(dif) selectivity regardless of the solvents.     

Effects of silica nanoparticle addition on polymer semiconductor wettability and carrier mobility in solution‐processable organic transistors on hydrophobic substrates

The effects of the addition of silica nanoparticles (SNPs) on wettability of regioregular poly(3‐hexylthiophene) (P3HT) organic semiconductor solutions on hydrophobic substrates and the carrier mobility in organic field‐effect transistors (OFETs) made of these films are investigated. The dewetting of films made from P3HT solutions on hydrophobic substrates modified with octadecyltrichlorosilane (ODTS) is markedly suppressed after the addition of SNPs with phenyl surfactants. This enables us to fabricate continuous P3HT/SNPs films with high crystallinity by the conventional spin‐coating technique, leading to higher mobility compared with P3HT FETs fabricated on non‐modified substrates. Moreover, the addition of SNPs with larger diameters compensates for the degradation of mobility associated with the increase in the concentration of SNPs. Solution‐processed P3HT/SNPs FETs on ODTS‐modified substrates exhibit a field‐effect mobility of 1.3 × 10^?2 cm² V^?1 s^?1, which is almost comparable to that of P3HT FETs without SNPs (2.1 × 10^?2 cm² V^?1 s^?1). © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 509–516     

Synthesis,Structural Characterization and Reactivity of a Bis(phosphine)(silyl) Platinum(II) Complex

Treatment of 1,2‐C₆H₄(SiH₃)(SiH₃) ( 1 ) with Pt(dmpe)(PEt₃)₂ (dmpe=Me₂PCH₂CH₂PMe₂) in the ratio of 1:1 leads to the complex {1,2‐C₆H₄(SiH₂)(SiH₂)}Pt^II (dmpe) ( 2 ), which can react with proton organic reagent bearing hydroxy group with low steric hindrance to form a tetra‐alkoxy substituted silyl platinum(II) compound ( 3 ). Compounds 2 and 3 are the very rare examples of silyl transition‐metal complexes derived from this chelating hydrosilane ligand. To the best of our knowledge, there are only 6 examples of silyl metal complexes prepared from this ligand with such structural features registered in the Cambridge Structural Database, among them, only one silyl platinum(II) compound is presented. The structures of complexes 2 and 3 were unambiguously determined by multinuclear NMR spectroscopic studies and single crystal X‐ray analysis.     

Ultrafast Electron Transfer Kinetics of Graphene Grown by Chemical Vapor Deposition

High electrochemical reactivity is required for various energy and sensing applications of graphene grown by chemical vapor deposition (CVD). Herein, we report that heterogeneous electron transfer can be remarkably fast at CVD‐grown graphene electrodes that are fabricated without using the conventional poly(methyl methacrylate) (PMMA) for graphene transfer from a growth substrate. We use nanogap voltammetry based on scanning electrochemical microscopy to obtain very high standard rate constants k⁰≥25 cm s^?1 for ferrocenemethanol oxidation at polystyrene‐supported graphene. The rate constants are at least 2–3 orders of magnitude higher than those at PMMA‐transferred graphene, which demonstrates an anomalously weak dependence of electron‐transfer rates on the potential. Slow kinetics at PMMA‐transferred graphene is attributed to the presence of residual PMMA. This unprecedentedly high reactivity of PMMA‐free CVD‐grown graphene electrodes is fundamentally and practically important.