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1.
Liu  Shao-Hua  Tian  Bo 《Nonlinear dynamics》2022,108(3):2471-2482
Nonlinear Dynamics - In this paper, a (2+1)-dimensional Caudrey–Dodd–Gibbon–Kotera–Sawada system is investigated in fluid mechanics via the symbolic computation. With the...  相似文献   
2.
Bo  Luo  Gao  Wei  Yu  Yuguo  Chen  Xiaojun 《Nonlinear dynamics》2022,110(1):281-311
Nonlinear Dynamics - The perovskite solar cell (PSC) is one of the most promising photovoltaic candidates along with the highly increasing demand for green electricity. One of the main concerns...  相似文献   
3.
Lin  Yu  Wu  Yeyu  Tan  Xuecai  Wu  Jiawen  Huang  Kejing  Mi  Yan  Ou  Panpan  Wei  Fucun 《Journal of Solid State Electrochemistry》2022,26(4):959-971
Journal of Solid State Electrochemistry - An ultrasensitive “signal-off–on” electrochemiluminescence (ECL) biosensor is constructed based on f1-TiO2/g-C3N4/PDA for thrombin...  相似文献   
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Mathematical Programming - We provide a control-theoretic perspective on optimal tensor algorithms for minimizing a convex function in a finite-dimensional Euclidean space. Given a function...  相似文献   
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The coordination chemistry of f-block elements (lanthanide and actinide) in molten salts has become a resounding topic in view of its great importance to the research and development (R&D) of molten salt reactors and pyroprocessing. In this Review article, a general overview of the coordination chemistry of f-block elements in molten salts is provided including past achievements and recent advances. Particular emphases are placed on the oxidation state, speciation, and solution structure of f-block metal ions in molten salts, as well as their relationships with the salt composition. Furthermore, this review briefly discusses the spectroscopic and theoretical methods that complement each other in revealing the coordination properties.  相似文献   
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Three nonfused ring electron acceptors (NFREAs) TTC6,TT-C8T and TT-TC8 were purposefully designed and synthesized.The molecular geometry can be adjusted by the steric hindrance of lateral substituents.According to the DFT calculations,from TTC6 to TT-C8T and TT-TC8,planarity of the molecular backbone is gradually improved,accompanying with the enhancing of intramolecular charge transfer effect.As for TT-TC8,the two phenyl substituents are almost perpendicular to the molecular backbone,which endues the acceptor with good solubility and suppresses it to form over-aggregation.Multidirectional regular molecular orientation and closer molecular stacking are formed in TT-TC8 film.As a result,TT-TC8 based devices afford the highest PCE of 13.13%,which is much higher than that of TTC6 (4.41%) and TT-C8T (10.42%) and among the highest PCE values based on NFREAs.  相似文献   
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Facile construction of sulfur-rich polymers using readily available raw chemicals is an area aggressively pursued but challenging. Herein we use common feedstocks of ethylene oxide (EO), propylene oxide (PO), and carbonyl sulfide (COS) to synthesize copoly(thioether)s which are traditionally produced from unpleasant and difficult to store episulfides. In this protocol, the EO/COS coupling selectively generates a pure poly(ethylene sulfide) (PES) with melting temperature (Tm) values up to 172°C and high yields up to 98%. The EO/PO/COS terpolymerization leads to the incorporation of soft poly(propylene sulfide) (PPS) and hard PES segments together, affording a random PES-co-PPS copoly(thioether) with the complete consumption of EO and PO. Additionally, by simply varying the EO/PO feeding ratio, the obtained copoly(thioether)s possess tunable thermal properties, Tm values in the range of 76–144°C, and excellent solubility. These copolymerizations are conducted in one-pot/one-step at industrially favored reaction temperatures of 100–120°C using catalysts of common organic bases, suggesting a facile and practical manner. Especially, the copoly(thioether) exhibits high refractive indices up to 1.68 owing to its high sulfur content, suggesting a broad application prospect in optical materials.  相似文献   
10.
低维硅锗材料是制备纳米电子器件的重要候选材料,是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一,有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布,纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。  相似文献   
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