Effect of oxygen on regulation of properties of moderately boron-doped diamond films

Regulation of oxygen on properties of moderately boron-doped diamond films is fully investigated. Results show that, with adding a small amount of oxygen (oxygen-to-carbon ratio < 5.0%), the crystal quality of diamond is improved, and a suppression effect of residual nitrogen is observed. With increasing ratio of O/C from 2.5% to 20.0%, the hole concentration is firstly increased then reduced. This change of hole concentration is also explained. Moreover, the results of Hall effect measurement with temperatures from 300 K to 825 K show that, with adding a small amount of oxygen, boron and oxygen complex structures (especially B₃O and B₄O) are formed and exhibit as shallow donor in diamond, which results in increase of donor concentration. With further increase of ratio of O/C, the inhibitory behaviors of oxygen on boron leads to decrease of acceptor concentration (the optical emission spectroscopy has shown that it is decreased with ratio of O/C more than 10.0%). This work demonstrates that oxygen-doping induced increasement of the crystalline and surface quality could be restored by the co-doping with oxygen. The technique could achieve boron-doped diamond films with both high quality and acceptable hole concentration, which is applicable to electronic level of usage.     

基于电源电流和输出电压的模拟电路故障模型研究

基于模拟电路电源电流和输出电压的协同分析,研究了复数域的故障建模方法,提出了一种2D故障模型的数学表达式,该模型为复平面上的一簇圆轨迹。为了扩大故障轨迹之间的距离,在相同测量精度和元件容差条件下提高故障检测率和隔离率,进一步提出了3D复数空间的优化故障模型。两种故障模型都极大简化了测点选择算法和模拟故障状态仿真的复杂度,理论上对模拟电路单故障的覆盖率为100%。基于滤波器电路的实验仿真结果验证了两种故障模型的有效性。     

CrN镀层的微粒磨损性能及其切削行为研究

在Teer UDP 550型闭合场非平衡磁控溅射离子镀设备上制备CrN镀层,以球-盘方法测定的比磨损率和微粒磨损法测定的微粒磨损率评价CrN镀层的耐磨性能,采用高速钢镀层钻头的钻孔数评价镀层的切削性能.结果表明,CrN镀层的微粒磨损率对氮流量(用光谱发射因子OEM值控制)的变化很敏感,而比磨损率却不能反映这种由于氮流量变化带来的镀层结构和性能的变化.在不同偏压条件下所制备的镀层微粒磨损率变化不明显.当微粒磨损率低于某一值时,CrN镀层的钻孔寿命明显提高,而比磨损率则无此规律.     

微芯片电泳化学发光检测多巴胺

多巴胺(Dopamine,DA)是哺乳动物的重要单胺类神经递质,多巴胺代谢异常会引起神经疾病,如癫痫、帕金森症以及老年痴呆症等~([1]).目前,测定多巴胺的方法主要有毛细管电泳法~([2]),电化学分析法~([3]),微流控芯片电泳电化学检测法~([4]).本研究采用自行构建的MCE-CL检测装置和自制的玻璃/PDMS复合芯片,建立了微流控芯片电泳-化学发光(MCE-CL)测定多巴胺的新方法,并应用于人尿样中多巴胺含量的检测.     

触媒组分对高温高压金刚石大单晶生长及裂纹缺陷的影响

本文利用六面顶压机,在5.6 GPa, 1250—1450℃的高压高温条件下,分别选用FeNiCo和NiMnCo触媒合金开展了金刚石大单晶的生长实验,系统地考察了触媒组分对金刚石单晶裂纹缺陷的影响.首先,通过对两种组分触媒晶体生长实验对比发现,金刚石大单晶裂纹缺陷出现的概率与触媒组分相关联.同NiMnCo触媒相比, FeNiCo触媒生长的金刚石单晶更容易出现生长裂纹.我们认为,这与FeNiCo触媒黏度高、流动性差、碳素输运能力差、生长中晶体比表面积大,进而导致其对生长条件稳定性的要求较高有关.其次,两种触媒极限增重速度和生长时间的关系曲线表明,相同生长时间条件下, NiMnCo触媒生长金刚石单晶的极限增重速度相对较大.再次,扫描电子显微镜测试结果表明,裂纹缺陷的出现与否同晶体表面平整度的高低无必然联系,表面平整度高的金刚石单晶内部也可能存在裂纹缺陷.最后,经对金刚石单晶傅里叶微区红外测试结果进行分析,得出了氮杂质含量的高低与金刚石单晶裂纹缺陷的出现与否无内在关联性的研究结论.     

Theoretical Study on the Structural and Optoelectronic Properties of the Linear Perfluorooctane Sulfonate （PFOS）

The perfluoroalkyl substances(PFS) have attracted considerable attention in recent years as a persistent global pollutant to be able to bioaccumulate in higher organisms.In this paper,theoretical analysis on electronic structures,optoelectronic properties and absorption spectra properties of the perflurooctane sulfonate(PFOS) in gas phase have been investigated by using the DFT/TD-DFT method.The geometric structures,electrostatic potentials,energy gaps,ionization potentials,electron affinities,frontier molecular orbital,excitation energies and absorption spectra for the ground state of PFOS were calculated.The result indicates that the ability of accepting electron of neutral PFOS is larger than that of anionic PFOS,while the electron excited by UV irradiation from HOMO to LUMO in the anionic PFOS is easier than that in the neutral PFOS.     

CaBa-铝酸盐玻璃中Cr4+谱线宽度随温度的变化

测量了15~300K温度范围内57.5%Al_1.5O-35%CaO-7.5%BaO玻璃中四价铬的发射光谱.这种材料中铬离子的能级处于Tanabe-Sugano图上弱场范围中,最低的激发态是³T₂,发射谱是一个宽带.按照单频近似理论拟合低温下的光谱,得到³T₂能级的零声子线位置E_zp=8400cm^-1,声子能量tω=320cm^-1,黄昆因子S=358.尽管单频近似能够较好地描述低温下的线形,发射光谱宽度随温度的变化却与单频近似理论的结果不符.讨论了这种差别的原因,认为可能的解释是与激发态耦合的声子能量大于与基态耦合的声子能量.     

偏振学编码及解码研究

提出了用LiNbO3晶体制作的光耦合双泡克耳斯楔编码器的设计方法，分析了在远场空间的偏振编码原理，并对其用琼斯矩阵法作了解码分析。     

用于光学实验的稳态汽泡式低温恒温器

本文报道一台用于光学实验的稳态汽泡式低温恒温器的结构和性能。该恒温器的工作温度是4—300K。     

金属有机源化学气相沉积法生长氧化锌薄膜中氢气的作用及其机理

本文重点探讨了金属有机源化学气相沉积生长ZnO薄膜中氢气的作用与机理.研究表明氢气对ZnO薄膜的结构与性质具有重要的影响.当采用叔丁醇为氧源时,氢气对ZnO薄膜的晶体质量,表面结构和发光性质主要产生负面的影响,同时发现氢气的加入有助于抑制碳的沾污.而当采用笑气为氧源时,测量显示表面变光滑,晶体质量得到提高,发光强度也得到提升.氢气在笑气作为氧源生长ZnO的过程中基本起到了正面的作用.论文最后从氢气降低生长表面能量,提高表面原子迁移能力但存在表面腐蚀作用的方向以上结果给予了较好的解释.研究显示MOCVD生长高质量ZnO薄膜中氢气的优化具有特别重要的意义.