在半金属表面上应力诱导的红荧烯晶态薄膜

报道了在Bi（001）衬底上从第一层开始形成的红荧烯晶体薄膜.随着覆盖度的增加,红荧烯薄膜的结构会发生从自组装到混合相的转变.在混合相中存在着红荧烯的晶体畴和分子自组装形成的畴壁.特别是,我们在这种晶体畴中发现了Kurdjunov-Sachs（KS）转动外延和巨大的压缩应力.随着覆盖度的增加,红荧烯薄膜会按照逐层生长的模式进行,直至第四个分子单层.我们认为,转动外延过程中所产生的巨大压缩应力是导致晶态红荧烯薄膜的形成原因.     

非手性的棒状分子在非手性表面形成的风车团簇

利用低温STM研究了非手性的棒状并五苯分子在Bi（111）表面形成的手性风车团簇.在团簇内部,并五苯分子分别沿Bi（111）的3个对称轴方向平行排列,形成6个不同的分子带.在每个分子带中,相邻分子之间有一个滑移错位.当平行排列的分子数多于4时,滑移错位发生反向,形成弯曲的风车扇叶.我们认为,分子的滑移错位来自于分子之间的π-π相互作用;而滑移错位的反向是团簇内部的吸引力导致的密堆积的结果.这两种作用的竞争是形成手性风车团簇的微观机制.     

全氟并五苯在半金属Ga表面的分子二聚化及自组装单层

利用超高真空扫描隧道显微镜(UHV-STM)和有机分子束沉积(OMBD)方法研究了全氟并五苯(perfluoropentancene,PFP)分子在半金属Ga表面的吸附和两维自组装. 在低覆盖度下单个PFP分子在Ga表面上表现出很高的迁移性. 在1分子单层(monolayer, ML)时PFP分子发生二聚化并在 Ga 表面上无序排列. 轻度热退火可导致PFP两维自组装: 二聚体排列为高度有序的一维分子带阵列, 带中 PFP二聚体排列为砖墙(brick wall)结构. 在高分辨 STM图中, PFP分子两端出现亮暗相反的圆形突起, 并且相邻分子的亮暗极性相反, 表明PFP分子带有电偶极矩, PFP二聚体带有电四极矩. 因此, PFP分子二聚体的形成机制可唯像解释为反向电偶极矩之间的静电吸引作用; 二聚体的砖墙排列结构可归结为同向电四极矩之间的静电排斥作用.     

Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface

High mobility quasi two-dimensional electron gas (2DEG) found at the CaZrO₃/SrTiO₃ nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics. Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO₃/SrTiO₃ interface. Furthermore, the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage. Remarkably, the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage. The diffusion constant increases by a factor of ～ 19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from -50 V to 100 V. These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling, but also have great significance in developing various oxide functional devices.     

LaAlO3/SrTiO3异质界面磁场调控的反常金属态

自LaAlO₃/SrTiO₃异质界面发现高迁移率的二维电子气以来,其二维超导电性、界面磁性和自旋轨道耦合等诸多物理性质已经被广泛研究.对于二维超导体,零温下超导-反常金属相变的起源仍然是一个悬而未决的问题.传统理论认为在超导-绝缘量子相变中只存在2种基态,即库珀对的超导基态和绝缘基态.然而在研究超导颗粒膜中超导电性的演化与厚度和温度的关系时发现,存在一个中间金属态破坏了超导体和绝缘体之间的直接过渡.这种中间金属态的标志性特征是,在超导转变温度之下存在饱和的剩余电阻,与之对应的基态称作反常金属态.本文主要对在LaAlO₃/SrTiO₃(001)异质界面磁场诱导的超导-反常金属量子相变进行了系统的研究.在没有外加磁场的情况下,电阻-温度(R-T)曲线和电流-电压(I-V)特性曲线表明样品在超导转变温度之下处于超导态.外加磁场会导致样品在低温下出现饱和电阻、正的巨磁阻和低电流范围内的线性I-V曲线.另外,霍尔电阻在一定的磁场之下会出现零电阻平台,而此时纵向电阻不为零,表现出明显的玻色金属态的特征.研究结果...     

Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr2CrWO6/SrTiO3 films

High-quality Sr₂CrWO₆ (SCWO) films have been grown on SrTiO₃ (STO) substrate by pulsed laser deposition under low oxygen pressure. With decrease of the film thickness, a drastic conductivity increase is observed. The Hall measurements show that the thicker the film, the lower the carrier density. An extrinsic mechanism of charge doping due to the dominance of oxygen vacancies at SCWO/STO interfaces is proposed. The distribution and gradient of carrier concentration in SCWO films are considered to be related to this phenomenon. Resistivity behavior observed in these films is found to follow the variable range hopping model. It is revealed that with increase of the film thickness, the extent of disorder in the lattice increases, which gives a clear evidence of disorder-induced localization charge carriers in these films. Magnetoresistance measurements show that there is a negative magnetoresistance in SCWO films, which is considered to be caused by the magnetic scattering of magnetic elements Cr³⁺ and W⁵⁺. In addition, a sign reversal of anisotropic magnetoresistance (AMR) in SCWO film is observed for the first time, when the temperature varies across a characteristic value, T_M. Magnetization—temperature measurements demonstrate that this AMR sign reversal is caused by the direction transition of easy axis of magnetization from the in-plane ferromagnetic order at T > T_M to the out-of-plane at T < T_M.     

Anomalous Metallic State Driven by Magnetic Field at the LaAlO3/KTaO3(111) Interface

The origin of the quantum superconductor to metal transition at zero temperature in two-dimensional superconductors is still an open problem, which has caused intensely discussion. Here, we report the observation of a quantum superconductor-to-metal transition in La Al O₃/KTa O₃(111) interface, driven by magnetic field. When a small magnetic field perpendicular to the film plane is applied, the residual saturated resistance is observed,indicating the emergence of an anomalo...