单畴的单原子In纳米线阵列的制备与研究

利用Si（001）向［110］方向偏4°角的斜切表面作为衬底，成功地制备了分布均匀的单畴的单原子In链阵列.扫描隧道显微镜分析表明，沉积的In原子优先吸附在台面上沿着台阶内边缘的位置，并在两个Si的二聚体链之间形成稳定的In二聚体.In二聚体组成直的单原子链，其生长机理与Car提出的“表面聚合反应”相一致.另外，衬底具有非常窄的台面和双原子层台阶边的特殊结构是形成单畴的单原子链的关键. 关键词： 铟单原子链 硅邻近面 扫描隧道显微镜     

Stabilization variation of organic conductor surfaces induced by π-π stacking interactions

The structures and stabilization of three crystal surfaces of TCNQ-based charge transfer complexes(CTCs) including PrQ(TCNQ) 2,MPM(TCNQ) 2,and MEM(TCNQ) 2,have been investigated by scanning tunneling microscopy(STM).The three bulk-truncated surfaces are all ac-surface,which are terminated with TCNQ molecular arrays.On the ac-surface of PrQ(TCNQ) 2,the TCNQ molecules form a tetramer structure with a wavelike row behavior and a γ angle of about 18° between adjacent molecules.Moreover,the dimer structures are resolved on both ac-surfaces of MPM(TCNQ) 2 and MEM(TCNQ) 2.In addition,the tetramer structure is the most stable structure,while the dimer structures are unstable and easily subject to the STM tip disturbance,which results in changeable unit cells.The main reasons for the surface stabilization variation among the three ac-surfaces are provided by using the ’π-atom model’.