Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 mA.The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA,corresponding to an output radio frequency(RF) power of up to 20.1 dBm.According to the calculated electric field distributions in the depleted region under both DC and alternating current(AC) conditions,the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.     

SAPO-18/SAPO-34共晶分子筛的合成及表征

以三乙胺(TEA)和N,N-二异丙基乙胺(DIEA)为双模板剂经恒温水热晶化法合成了SAPO-18(AEI结构)与SAPO-34(CHA结构)两相共生的SAPO分子筛. 考察了DIEA用量、 硅铝比及晶化时间等因素的影响, 并通过X射线衍射(XRD)、 扫描电子显微镜(SEM)和氨气程序升温脱附(NH₃-TPD)等手段对所得样品的晶相、 形貌和酸性进行了表征. 结果表明, 当n(DIEA)/n(Al₂O₃)=0.2, n(SiO₂)/n(Al₂O₃)=0.6, 晶化时间为4 d时, 得到形貌规整, 结晶度高且AEI/CHA结构比为74:26的共生相SAPO分子筛. 随着晶化时间的延长, SAPO-18在AEI/CHA共生相中所占比例逐渐上升, 表明SAPO-5, SAPO-34和SAPO-18三者中SAPO-18的热力学稳定性最高. 二甲醚制烯烃(DTO)催化性能测试结果表明, AEI/CHA共晶结构比为74/26的共生相分子筛具有较高的催化活性和双烯(C₂⁼+C₃⁼)选择性(84.29%), 同时积碳生成速率较慢.     

基板受辐照比值对激光同轴熔丝沉积稳定性的影响

激光熔丝沉积技术是一种输送丝材并以激光为热源的定向能量沉积技术。为了探讨同轴熔丝过程的机理与效应，采用自主研发的激光内同轴送丝熔化沉积技术来分析研究基板受辐照比值对于熔丝过程稳定性的影响；借助高速相机拍摄并分析熔丝沉积过渡阶段机理；通过数学模型计算与实验验证的方式研究了熔丝沉积动态过程与工艺参数之间的关系。结果表明：较小的基板受辐照比值会引起“液滴”过渡熔丝行为，即处于稳定与不稳定的临界状态；而基板受辐照比值较大时会引起“液桥”过渡熔丝行为，即处于一个相对稳定的状态。本研究对激光熔丝沉积的动力学稳态性分析具有一定的指导意义。