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A novel yellow emitting phosphor Dy3+, Bi3+ co-doped YVO4 potentially for white light emitting diodes 下载免费PDF全文
Novel Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) phosphors for light emitting diode(LED) were successfully synthesised by solid-state reaction.The calculation results of electronic structure show that YVO4 has a direct band gap with 3 eV at G.The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states.An efficient yellow emission under near-ultraviolet(365 nm) excitation is observed.Compared with the pure YVO4:Dy3+ samples,the Dy3+,Bi3+ co-doped samples show a more intensive emission peak(at 574 nm) and a new broad emission band(450-770 nm),due to the 4F9/2 6H13/2 transition of Dy3+ and the emission of the VO3 4 Bi3+ complex respectively.The optimum chromaticity index of Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) is(0.447,0.497),which indicates that YVO4:Dy3+,Bi3+ has higher colour saturation than the commercial phosphor YAG:Ce3+.The effects of concentration of Dy3+,Bi3+,electric states and the photoluminescence properties are discussed in details. 相似文献
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采用高温固相法成功合成了单一相的Eu3+,Bi3+共掺的Mg5SnB2O10红色荧光粉,并通过X射线衍射、漫反射光谱、光致发光光谱等手段对该体系的结构及其发光特性进行了测试和研究.激发光谱表明,该荧光粉在393 nm呈现Eu3+的7Fo—5L6特征激发,可以与用于发光二极管的近紫外芯片很好地匹配.在393 nm激发下,其发射光谱在591,612,701 nm处呈现Eu3+的5Do—7F1,5Do—7F2,5D0—7F4的特征发射.并且当固定Eu3+的浓度时,随着Bi3+含量的增加,发现Bi3+,Eu3+在这一体系中存在能量传递现象,系列样品发光强度大幅度提高.通过研究系列样品在不同Bi3+,Eu3+掺杂浓度下的发光性能,得出最佳样品为Mg4.89Eu0.1Bi0.01SnB2O10,其积分强度达到了商用Y2O2S:Eu3+的1.1倍. 相似文献
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