A method of generating random bits by using electronic bipolar memristor

The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory.However,such a weakness can be used as an asset for generating the random bits,which is valuable in a hardware security system.In this work,a forming-free electronic bipolar Pt/Ti/Ta2O5/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device.The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the"oxygen grabbing"process.The stochasticity of the electrons trapping/detrapping governs the random distribution of the set/reset switching voltages of the device,making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal.The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.     

GC—MS分析不同方法提取的大黄挥发性成分

分别采用顶空进样法和超临界CO2萃取法提取大黄挥发性成分,采用GC-MS结合保留指数进行检测分析。顶空进样法分析鉴定出8种挥发性成分,超临界CO2萃取法鉴定出15种挥发性成分。两种提取方法分别侧重于不同类型的挥发性成分,利用GC-MS结合保留指数进行定性分析,更快速准确。