不同工艺尺寸CMOS器件单粒子闩锁效应及其防护方法

基于建立的不同工艺尺寸的CMOS器件模型,利用TCAD器件模拟的方法,针对不同工艺CMOS器件,开展了不同工艺尺寸CMOS器件单粒子闩锁效应(SEL)的研究。研究表明,器件工艺尺寸越大,SEL效应越敏感。结合单粒子闩锁效应触发机制,提出了保护带、保护环两种器件级抗SEL加固设计方法,并通过TCAD仿真和重离子试验验证防护效果,得出最优的加固防护设计。结果表明,90nm和0.13μm CMOS器件尽量选用保护带抗SEL结构,0.18μm或更大工艺尺寸CMOS器件建议选取保护环抗SEL结构。     

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.     

90nm互补金属氧化物半导体静态随机存储器局部单粒子闩锁传播效应诱发多位翻转的机理

基于单粒子效应脉冲激光实验装置,开展了90 nm互补金属氧化物半导体静态随机存储器的单粒子翻转和闩锁效应实验,并给出了器件单粒子翻转效应位图.实验发现,器件出现了大量的多位翻转和约20 mA的电源电流脉冲.借助器件仿真工具,揭示了器件发生单粒子多位翻转效应的原因.结果表明,器件局部阵列发生单粒子闩锁效应并传播到多个位单元是诱发多位翻转的主要原因.通过对比分析脉冲激光和器件仿真实验结果,发现P/N阱电势塌陷是导致90 nm互补金属氧化物半导体静态随机存储器出现单粒子闩锁传播效应的内在物理机制.     

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

By using the pulsed laser single event effect facility and electro-static discharge(ESD) test system, the characteristics of the "high current", relation with external stimulus and relevance to impacted modes of single event latch-up(SEL)and transient-induced latch-up(TLU) are studied, respectively, for a 12-bit complementary metal–oxide semiconductor(CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between "high current" induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the "high current" induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node(the ground node) is the cause of the minority carrier diffusion for TLU.