改进的EHMO理论Ⅱ.通式及其在异核双原子分子和多原子分子上的应用

本文将前文提出的对EHMO理论改进的校正因子(I_p~O-Y_p)e~(-a/2R)推广应用于异核双原子分子和多原子分子。用异核双原子分子LiH,NaH,KH,CuH,MgH,CaH,OH,HCl,HF,BeO,NaCl,NaNe和多原子分子BrCN,CH_4,CH_3F,,考核了改进EHMO理论的计算通式,得到了较满意结果。结果表明,经改进后的EHMO计算通式,用于研讨分子的稳定空间构型时,所得结果与实验值间误差不大于30％。     

STRUCTURES OF Si AND Ge CLUSTERS UNDER MODIFIED STILLINGER-WEBER POTENTIAL

Structural behaviors of silicon and germanium clusters under the recently proposed modified Stillinger-Weber (SW) potential have been studied by molecular dynamics method along with the con-jugate-gradient optimization. Since the SW potentials have been derived from the properties of bulk materials, it gives relatively large discrepancy when the cluster number is small, e.g. n=3 and 4. When n>4, the ground-state structures under the modified SW potential are close to that from the first-principle calculation. The binding energies are also improved under the modified SW potential. These results may be attributed to the relative enhancement of the two-body term over the three-body term in the modified SW potential, which leads to structures with a preferential coordination number 4. Structural behaviors of germanium clusters are similar to those of silicon.     

β-C3N4,β-Si3N4和β-Ge3N4的能带结构

采用基于密度泛函理论的线性丸盒轨道原子球近似(LMTO-ASA)从头计算方法,研究了β-C₃N₄,β-Si₃N₄和β-Ge₃N₄的能带结构,得到了它们的能隙分别为:4.1751,5.1788和4.0279eV。对于β-C₃N₄,由于N的部分2p电子占据了非键轨道,禁带宽度较窄;对于β-Si₃N_{4关键词：}     

多孔硅尺寸的理论研究

研究了球形纳米硅的振动特性及Raman谱，建立了Raman移动与尺寸的对应关系．用球形纳米硅来模拟多孔硅，发现多孔硅的尺寸比通常认为的尺度要小得多 关键词：     

H在Al(111)面上吸附的多重散射Xα自洽计算

利用多重散射X_α自洽场方法研究了H在Al(111)表面吸附的桥位和顶位模型。结果表明顶位吸附的结合能优于桥位。顶位吸附中H的1s电子与Al相互作用形成不同形式的σ键,本文分析了这些成键细节,并给出了顶位吸附的态密度。 关键词：     

A THEORETICAL MODEL FOR H2 DISSOCIATIVE ADSORPTION ON Cu SURFACES

A theoretical model for describing H₂ dissociative chemisorption on Cu surfaces is proposed. The sticking probability S is calculated as a function of vibrational state, average kinetic energy and incident angle of hydrogen molecular beam. Within the theoretical frame of this model, the different contributions to S from H₂(v = 0) and H₂(v = 1) can be clearly distinguished. The calculated results indicate that vibrational energy significantly promotes the chemisorption of H₂ on Cu surfaces in the region of low translational energy. The equations derived can be used to analyze the experimental data for both pure and seeded molecular beams.     

BAND STRUCTURES OF Si-C AND Si-C-Ge ALLOYS

Band structures of Si-C and Si-C-Ge alloys are calculated by using the ab initio LMTO (linear muffin-tin orbital) method within the framework of atomic-sphere approximation. The effects of different atomic configuration and lattice relaxation on the band structure of alloys are taken into account. The results show that for large concentrations of C in Si and Si-Ge, the band gap increases monotonically, while for small concentrations of C in Si and Si-Ge, the band gap shrinks. The lattice relaxation further reduces the band gap. The possible explanations for the reduction of band gap of Si-C and Si-C-Ge alloya are presented.     

CO和NO在CuO及Cu2O(110)表面吸附选择规律研究

采用离散变分Xα方法分别计算了CO和NO以C（或N）端顶位吸附在CuO（110）及Cu2O（110）表面上的基态势能曲线,结果表明：CO在Cu2O表面上的吸附强,而在CuO表面上的吸附弱;NO则在CuO表面上吸附强,在Cu2O表面上吸附弱．它们的吸附能的大小顺序为：CuO－NO＞Cu2O－CO＞Cu2O－NO＞CuO－CO．对于CuO－NO（或CO）吸附体系,主要是Cu的3d轨道与吸附分子的2π轨道间的相互作用;对于Cu2O－CO（或NO）吸附体系,则主要是吸附质分子的5σ及2π分子轨道与其顶位Cu1的4s及4p轨道和侧位Cu2的3d轨道相互作用．本文通过吸附势能曲线、态密度分析、成键分析及电荷转移量和方向等方面对实验现象做了合理的解释．     

碱金属在GaAs(110)表面上的吸附

本文讨论Li,Na,K,Cs在GaAs(110)表面上的吸附,考虑理想表面和弛豫表面两种情况。计算采用集团模型,用电荷自洽的ExtendedHucheltheory(缩写为EHT)方法进行。结果表明,吸附后表面原子趋向于理想位置,碱金属原子位于垂直于表面沿[001]方向横跨表面Ga原子的对称平面上。碱金属吸附后的费密能级在价带顶以上约0.7eV处,是由表面Ga原子与碱金属原子间的相互作用决定的。而在价带中碱金属原子主要与表面As原子成键。 关键词：     

GaAs(110)面的电子结构

本文研究GaAs(110)面旋转弛豫的电子结构,采用一个原子集团来模拟GaAs(110)面,在其内边界上用一些“类Ga”和“类As”原子来钝化伸向体内的悬挂键,以消除由于有限模型而引起的多余边界效应。用EHT方法计算集团的总能量,由能量极小定出GaAs(110)面最稳定的弛豫位置为表面旋转角ω=18°,表面Ga原子向体内下降0.33?,As原子上升0.13?,这与Pandey等人从光电子部分产额谱所得的结果基本一致。本文还计算了理想和弛豫的GaAs(110)面的态密度,发现对于理想的(110)面禁带中确实存在一个空的表面峰。弛豫后,该峰向上移动进入导带,禁带中不再出现表面峰,与实验结果相符。 关键词：