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Germanium ions were implanted into SiO2 films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×1015 and 1×1016 cm-2.Under an ultraviolet excitation of ~5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T1→S0 transition in GeO,which was formed during implantation and annealing process. 相似文献
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Germanium ions were implanted into SiO2 films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×1015 and 1×1016 cm-2.Under an ultraviolet excitation of ~5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T1→S0 transition in GeO,which was formed during implantation and annealing process. 相似文献
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