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用卢瑟福背散射/沟道技术研究了1MeVSi ̄+在衬底加温和室温下以不同剂量注入Al_(0.3)G_(0.7)As/GaAs超晶格和GaAs后的晶格损伤。在衬底加温下,观察到Al_(0.3)Ga_(0.7)As/GaAs超晶格和GaAs都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围,以及两种速率失去平衡的临界剂量。超晶格比GaAs更难以损伤,并且它的两种速率失去平衡的临界剂量也大于GaAs中的相应临界剂量,用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。用CNDO/2量子化学方法计算了GaAs和Al_xGa_(1-x)As中化学键的相对强度,并根据计算结果解释了注入过程中Al_(0.3)Ga_(0.7)As/GaAs超晶格和GaAs中晶格损伤程度的差别。 相似文献
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利用脉冲激光制膜法,在多种衬底和温度条件下,系统研究了La0.5Sr0.5CoO3(LSCO)薄膜的结构和外延生长特性,在LaAlO3,SrTiO3和MgO衬底上实现了LSCO薄膜的外延生长.外延生长的薄膜具有低的电阻率和金属性导电特征.研究表明,外延生长的最佳温度范围为700—800℃,最佳衬底为LaAlO3.并着重探讨了衬底材料和淀积温度等多种因素对LSCO薄膜的生长与性
关键词: 相似文献
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用卢瑟福背散射/沟道技术研究了1MeVSi+在衬底加温和室温下以不同剂量注入Al0.3G0.7As/GaAs超晶格和GaAs后的晶格损伤。在衬底加温下,观察到Al0.3Ga0.7As/GaAs超晶格和GaAs都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围,以及两种速率失去平衡的临界剂量。超晶格比GaAs更难以损伤,并且它的两种速率失去平衡的临界剂量也大于GaAs中的相应临界剂量,用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。用CNDO/2量子化学方法计算了GaAs和AlxGa1-xAs中化学键的相对强度,并根据计算结果解释了注入过程中Al0.3Ga0.7As/GaAs超晶格和GaAs中晶格损伤程度的差别。
关键词: 相似文献
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Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-k LaLuO3 Gate Dielectric 下载免费PDF全文
A strained-SiGe p-channel metal-oxide-semiconductor-field-effect transistors (p-MOSFETS) with higher-k LaLu03 gate dielectric was fabricated and electrically characterized. The novel higher-k (k-30) gate dielectric, LaLuO3, was deposited by molecular-beam deposition and shows good quality for integration into the transistor. The transistor features good output and transfer characteristics. The hole mobility was extracted by the splitting C-V method and a value of 2OOcm2/V.s was obtained for strong inversion conditions, which indicates that the hole mobility is well enhanced by SiGe channel and that the LaLuO3 layer does not induce additional significant carrier scattering. Gate induced drain leakage is measured and analyzed by using an analytical model. Band-to- band tunneling et~ciencies under high and low fields are found to be different, and the tunneling mechanism is discussed. 相似文献
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Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis 下载免费PDF全文
The gate-induced-drain-leakage of MOSFETs is analyzed to better understand the sub-threshold swing degradation of SiOe tunnel field-effect transistors and their band-to-band tunneling mechanism. The numerical model of the analysis is elaborated. Equivalent trap energy levels are extracted for Si and strained SiOe. It is found that the equivalent trap energy level in SiGe is shallower than that in Si. 相似文献
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The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si+ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface. 相似文献
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Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing 下载免费PDF全文
Solid reactions between Ni and relaxed Si0.7Ge0.3 substrate were systematically investigated with different Al interlayer thicknesses. The morphology, composition, and micro-structure of the Ni germanosilicide layers were analyzed with different annealing temperatures in the appearance of Al. The germanosilicide layers were characterized by Rutherford backscattering spectrometry, cross-section transmission electron microscopy, scan transmission electron microscopy, and secondary ion mass spectroscopy. It was shown that the incorporation of Al improved the surface and interface morphology of the germanosilicide layers, enhanced the thermal stabilities, and retarded the Ni-rich germanosilicide phase to mono germanosilicide phase. With increasing annealing temperature, Al atoms distributed from the Ni/Si0.7Ge0.3 interface to the total layer of Ni2Si0.7Ge0.3, and finally accumulated at the surface of NiSi0.7Ge0.3. We found that under the assistance of Al atoms, the best quality Ni germanosilicide layer was achieved by annealing at 700 ℃ in the case of 3 nm Al. 相似文献
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The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si+ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface. 相似文献
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