碲溶剂法生长碲镉汞晶体的数值模拟

提出了碲溶剂法在稳态条件下生长碲镉汞晶体的理论模型.该模型利用与时间相关的一维物质扩散方程组，熔区自由边界通过相图来确定.采用有限差分法完成了组分x=0.2的长波碲镉汞晶体生长过程的数值模拟.讨论了液相区温度场分布、加热器移动速度、液相区长度和生长界面温度对生长碲镉汞晶体轴向组分的影响.模拟结果与实验结果相符. 关键词：     

Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad(SiO₂. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.