| 碲溶剂法生长碲镉汞晶体的数值模拟 |
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| 引用本文： | 刘家璐,张廷庆,罗宏伟,严北平,郎维和,张宝峰.碲溶剂法生长碲镉汞晶体的数值模拟[J].物理学报,1998,47(2):275-285. |
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| 作者姓名： | 刘家璐 张廷庆 罗宏伟 严北平 郎维和 张宝峰 |
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| 作者单位： | (1)电子工业部第11研究所，北京 100015; (2)西安电子科技大学微电子研究所，西安 710071 |
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| 摘 要： | 提出了碲溶剂法在稳态条件下生长碲镉汞晶体的理论模型.该模型利用与时间相关的一维物质扩散方程组，熔区自由边界通过相图来确定.采用有限差分法完成了组分x=0.2的长波碲镉汞晶体生长过程的数值模拟.讨论了液相区温度场分布、加热器移动速度、液相区长度和生长界面温度对生长碲镉汞晶体轴向组分的影响.模拟结果与实验结果相符.
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| 关 键 词： | 碲溶剂法 碲镉汞 数值模拟 晶体生长 红外材料 |
| 收稿时间： | 1997-05-26 |
| 修稿时间： | 9/9/1997 12:00:00 AM |
NUMERICAL SIMULATION OF THE GROWTH OF Hg1-xCdxTe CRYSTAL BY THE TELLURIUM SOLVENT METHOD |
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| LIU JIA-LU,ZHANG TING-QING,LUO HONG-WEI,YAN BEI-PING,LANG WEI-HE and ZHANG BAO-FENG.NUMERICAL SIMULATION OF THE GROWTH OF Hg1-xCdxTe CRYSTAL BY THE TELLURIUM SOLVENT METHOD[J].Acta Physica Sinica,1998,47(2):275-285. |
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| Authors: | LIU JIA-LU ZHANG TING-QING LUO HONG-WEI YAN BEI-PING LANG WEI-HE and ZHANG BAO-FENG |
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| Abstract: | A theoretical model is presented describing the growth of Hg1-xCdxTe crystal by the tellurium solvent method under steady growth conditions. The model uses the one-dimensional time-dependent equations of species diffusion with the moving free boundaries of the solution zone determined via consideration of the phase diagram. Numerical solutions are presented for the growth of Hg0.8Cd0.2Te (x=0.2) crystal by the finite difference method. The iufluence of the temperature profile of the solution zone, the velocity of the travelling heater, the length of the initial solution zone and the temperature of the growth interface on the crystal axial composition of HgCdTe is discussed in detail. The simulation results are in good agreement with the experiment. |
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